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Aluminum-scandium alloy target blank and preparation method and application thereof

An alloy target, an aluminum-scandium technology, which is applied in the field of aluminum-scandium alloy target blank and its preparation, can solve the problems of affecting film-forming performance, uneven microstructure, and scandium segregation.

Inactive Publication Date: 2020-08-07
FUJIAN ACETRON NEW MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the aluminum-scandium alloy with high scandium content prepared by the above method has high density, there are defects such as inhomogeneous microstructure and scandium segregation, which affect its film-forming performance.

Method used

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  • Aluminum-scandium alloy target blank and preparation method and application thereof
  • Aluminum-scandium alloy target blank and preparation method and application thereof
  • Aluminum-scandium alloy target blank and preparation method and application thereof

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preparation example Construction

[0026] The invention provides a method for preparing an aluminum-scandium alloy target blank, comprising the following steps:

[0027] Put the aluminum source and the scandium source in a water-cooled copper crucible, vacuumize it and fill it with an inert gas, and repeat the arc melting to obtain a molten alloy;

[0028] Condensing the molten alloy liquid under the protection of an inert gas to obtain an aluminum-scandium alloy ingot;

[0029] The aluminum-scandium alloy ingot is subjected to electromagnetic stirring and repeated thermomechanical treatment in sequence to obtain an aluminum-scandium alloy target blank.

[0030] In the present invention, unless otherwise specified, all raw material components are commercially available products well known to those skilled in the art.

[0031] The aluminum source and the scandium source are placed in a water-cooled copper crucible, vacuumized and then filled with an inert gas, and arc melting is repeated to obtain molten alloy ...

Embodiment 1

[0054] as per image 3 The process shown in the preparation of aluminum scandium alloy target blank, the specific steps are as follows:

[0055] (1) Dip aluminum (purity: 99.999%) into ethyl acetate for wiping with absorbent cotton, then wash with concentrated sulfuric acid (95% by mass), wash with water to remove residual sulfuric acid solution and metal ions, and then place in vacuum Dry in a drying oven at 25°C; scandium (purity: 99.99%) is dried in a vacuum oven at 25°C; aluminum: scandium = 65at%: 35at%, the total mass is 150g.

[0056] (2) Place the treated aluminum on the bottom of the water-cooled copper crucible in the high vacuum arc melting furnace, place the treated scandium on the aluminum surface, and use vacuum grease to seal the furnace body of the high vacuum arc melting furnace. The pump is evacuated 4 times, and then the molecular pump is used to evacuate to a pressure of 3.4×10 -3 Pa, then filled with high-purity argon gas to a pressure of -0.05MPa, adjus...

Embodiment 2

[0059] According to the method of embodiment 1, the aluminum-scandium alloy target blank is prepared, and the difference from embodiment 1 is:

[0060] In step (1), acetone replaces ethyl acetate, scandium: aluminum=40at%: 60at%;

[0061] In step (2), the maximum current of arc melting is 430A, the time of single arc melting is independently 70s, and the condensation time is 45s;

[0062] In step (3), the electric current of the electromagnetic stirring is 335A, and the deformation rate of a single ingot rolling is 27%; Density>97%).

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Abstract

The invention provides an aluminum-scandium alloy target blank and a preparation method and application thereof, and relates to the technical field of aluminum-scandium alloys. The preparation methodof the aluminum-scandium alloy target blank comprises the following steps that an aluminum source and a scandium source are placed in a water cooling copper crucible, the water cooling copper crucibleis filled with inert gas after being vacuumized, electric arc melting is carried out repeatedly, and molten alloy liquid is obtained; the molten alloy liquid is condensed under inert gas shielding, and an aluminum-scandium alloy ingot is obtained; and the aluminum-scandium alloy ingot is sequentially subjected to electromagnetic stirring and repeated thermal mechanical treatment, and the aluminum-scandium alloy target blank is obtained. According to the aluminum-scandium alloy target blank and the preparation method and application thereof, electric arc melting is carried out under a vacuum and inert atmosphere, and the oxygen content in an aluminum-scandium alloy is reduced; by means of repeated electric arc melting, electromagnetic stirring and repeated thermal machining, the structureof the as-cast aluminum-scandium alloy is improved, and the defects of the as-cast aluminum-scandium alloy are repaired; the utilized water cooling copper crucible is high in cooling speed, segregation of scandium in the aluminum-scandium alloy is reduced, and the target blank is even in crystal particle, free of segregation, even in microstructure, high in density and good in film-forming property.

Description

technical field [0001] The invention relates to the technical field of target material preparation, in particular to an aluminum-scandium alloy target blank and its preparation method and application. Background technique [0002] Film Bulk Acoustic Wave Resonator (FBAR) and Bulk Acoustic Wave (BAW) resonator technology is a new generation of wireless radio frequency filters, duplexers and multiplexers, and has been increasingly used in the field of 5G mobile communications. The basic structure of FBAR is as follows Figure 1~2 As shown, it is composed of a piezoelectric thin film on a silicon substrate and two upper and lower layers of metal thin film electrodes. FBAR filter has good application prospects, can work in the 1-20GHz frequency band, has high quality factor (Q factor), small size, low loss, excellent temperature stability and complementary type formed with PMOS tube-NMOS tube MOS integrated circuit (CMOS IC) compatible features. An index for evaluating the per...

Claims

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Application Information

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IPC IPC(8): C23C14/34C22C1/02C22C21/00C22C28/00
CPCC22C1/02C22C1/026C22C21/00C22C28/00C23C14/3414
Inventor 蔡小勇张科曹建亮李强
Owner FUJIAN ACETRON NEW MATERIALS CO LTD
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