Low-dielectric-constant hollow aluminum oxide/silicon dioxide nano composite material and application thereof

Abstract

The invention belongs to the technical field of material chemistry and relates to a low-dielectric-constant hollow aluminum oxide / silicon dioxide nano composite material, and further discloses a preparation method and application thereof. The low-dielectric-constant hollow aluminum oxide / silicon dioxide nano composite material is of a laminated shell structure with a closed cavity structure; aluminum oxide is directionally deposited on the outer surface of a hollow silicon dioxide shell layer; an inner shell is a silicon dioxide layer; an aluminum oxide shell body is deposited and grown on thesurface of the silicon dioxide layer; since the advantages of the aluminum oxide and silicon dioxide are effectively combined, and the advantages of low dielectric constant, low refractive index andhigh-frequency dielectric stability of the hollow silicon dioxide can be exerted at the same time; and the advantages of high strength, chemical erosion resistance, low thermal conductivity, low thermal expansion coefficient and the like of the aluminum oxide material are utilized, so that the material can meet the performance requirements in the antireflection field and the 5G millimeter wave frequency band field.

Description

technical field [0001] The invention belongs to the technical field of material chemistry, specifically relates to a low dielectric constant hollow alumina / silicon dioxide nanocomposite material, and further discloses its preparation method and application. Background technique [0002] With the vigorous and rapid development of science and technology, we have entered the IT era of rapid development. In the rapidly developing field of information technology, various electronic products, systems and equipment are constantly emerging. From the automatic control system of industrial production to various electrical equipment in home life, it contains a large number of electronic circuits. With the rapid growth of the electronic industry in the 21st century, the impact on our life and work is gradually deepening. The emergence of various sensors and electronic components plays an irreplaceable role in various fields of national defense and national economy, and has also been w...

AI Technical Summary

Problems solved by technology

However, in the prior art for porous SiO 2 The research on materials mainly focuses on how to reduce the dielectric constant of silicon oxide films, but there are relatively few studies on how to effectively reduce the dielectric constant of silicon dioxide materials themselves. Moreover, porous SiO 2 The dielectric properties of materials are also greatly affected by the preparation process, which is not conducive to the wide application of materials.

Images