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A two-dimensional molybdenum disulfide material with uniform high strain and its preparation method

A molybdenum disulfide, high-strain technology, used in molybdenum sulfide, chemical instruments and methods, polycrystalline material growth, etc. Effect

Active Publication Date: 2021-03-26
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its potential has not been realized due to the difficulty in imposing uniform high strains on 2D materials.

Method used

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  • A two-dimensional molybdenum disulfide material with uniform high strain and its preparation method
  • A two-dimensional molybdenum disulfide material with uniform high strain and its preparation method
  • A two-dimensional molybdenum disulfide material with uniform high strain and its preparation method

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preparation example Construction

[0027] A method for preparing a uniform and high-strain two-dimensional molybdenum disulfide material provided in an embodiment of the present invention, adopts such as figure 1 The shown device is prepared, comprising the steps of:

[0028] Two-dimensional molybdenum ditelluride with the same crystal structure is used as a precursor, placed in a hydrogen sulfide atmosphere, and at a reaction temperature above 600°C, the controllable tellurium element is produced between molybdenum ditelluride and hydrogen sulfide and sulfur element replacement, thereby converting molybdenum ditelluride into two-dimensional molybdenum disulfide, such as Figure 7 As shown, since the lattice constant of molybdenum disulfide is 11.6% larger than that of molybdenum disulfide, molybdenum disulfide tends to maintain the lattice of molybdenum disulfide during the replacement process, so that the generated molybdenum disulfide maintains the strain.

[0029] Preferably, a mixed gas with a concentrati...

Embodiment 1

[0036] Two-dimensional molybdenum ditelluride with different thicknesses prepared by mechanical exfoliation method was transferred to a silicon oxide substrate and placed in a horizontal quartz tube; the quartz tube was flushed with argon, the air was exhausted, and then a sulfide solution with a concentration of 5% was introduced. The mixed gas of hydrogen and argon until the pressure in the quartz tube reaches 0.7 atmospheres; the quartz tube is closed, and heating is started, and the temperature is raised to 600 °C at a heating rate of 20 °C / min and then kept for 10 minutes; then the quartz tube is naturally cooled to room temperature, After absorbing hydrogen sulfide gas with sodium hydroxide solution, the sample was taken out to complete the preparation of two-dimensional molybdenum disulfide.

[0037] Elemental analysis (for tellurium, molybdenum, and sulfur, respectively) of partially replaced samples using energy-dispersive X-ray spectroscopy in a transmission electron ...

Embodiment 2

[0041]Two-dimensional molybdenum ditelluride with different thicknesses prepared by mechanical exfoliation method was transferred to a silicon oxide substrate and placed in a horizontal quartz tube; the quartz tube was flushed with argon, the air was exhausted, and then a sulfide solution with a concentration of 5% was introduced. The mixed gas of hydrogen and argon until the pressure in the quartz tube reaches 0.7 atmospheres; the quartz tube is closed, and heating is started, and the temperature is raised to 680 °C at a heating rate of 20 °C / min and then kept for 10 minutes; then the quartz tube is naturally cooled to room temperature, After absorbing hydrogen sulfide gas with sodium hydroxide solution, the sample was taken out to complete the preparation of two-dimensional molybdenum disulfide.

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Abstract

The invention belongs to the field of two-dimensional material preparation, and specifically discloses a uniform and high-strain two-dimensional molybdenum disulfide material and a preparation methodthereof. The preparation method comprises the following steps: taking two-dimensional molybdenum ditelluride as a precursor at the reaction temperature of 600 DEG C or above, and performing controllable tellurium element and sulfur element replacement between the precursor and hydrogen sulfide so as to obtain uniform and high-strain two-dimensional molybdenum disulfide and finish the preparation of the two-dimensional molybdenum disulfide material. An element replacement method is adopted, two-dimensional molybdenum ditelluride is converted into two-dimensional molybdenum disulfide while the two-dimensional molybdenum disulfide is kept in a high-strain state, so the method is simple and high in controllability, large-scale preparation can be achieved, and the generated strain is uniform and adjustable in a large range; and the obtained two-dimensional molybdenum disulfide material has a huge application prospect in the fields of novel photoelectronic devices and catalysis, and the physical and chemical properties of the two-dimensional molybdenum disulfide material can be adjusted to a great extent by applying strain energy.

Description

technical field [0001] The invention belongs to the field of two-dimensional material preparation, and more specifically relates to a uniform high-strain two-dimensional molybdenum disulfide material and a preparation method thereof. Background technique [0002] Strain is widely used to tune the physicochemical properties of materials, often referred to as strain engineering. Strain engineering has given rise to many technological applications, represented by the application of high-mobility strained silicon germanium in modern transistors and the application of strained III-V semiconductors in optoelectronic devices. The strain in these materials is mainly achieved by heteroepitaxial growth, where the lattice mismatch between the epitaxially grown material and the substrate causes strain in the epitaxial layer. Two-dimensional materials have been considered to have special potential in strain engineering since their discovery. This is mainly attributable to its atomic-sc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G39/06B82Y40/00B82Y30/00B01J27/051C30B29/46C30B1/10
CPCB01J27/051B82Y30/00B82Y40/00C01G39/06C01P2002/82C01P2004/03C30B1/10C30B29/46
Inventor 刘开朗翟天佑李会巧
Owner HUAZHONG UNIV OF SCI & TECH
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