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A kind of preparation method of nano-silicon carbide particles based on kcl shape regulator

A technology of nano-silicon carbide and regulator, applied in the direction of silicon carbide, chemical instruments and methods, carbides, etc., can solve the problems of low purity, uneven particle size distribution, and uncontrollable shape, and achieve high purity and particle agglomeration Small size, great prospects for industrialized production

Active Publication Date: 2021-12-17
内蒙古海特华材科技有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problems of uncontrollable shape, uneven particle size distribution and low purity in the preparation of existing silicon carbide powders, and to provide a method for preparing nano-silicon carbide particles based on a KCl shape regulator

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  • A kind of preparation method of nano-silicon carbide particles based on kcl shape regulator
  • A kind of preparation method of nano-silicon carbide particles based on kcl shape regulator

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specific Embodiment approach 1

[0016] Specific embodiment one: present embodiment is a kind of preparation method based on the nano-silicon carbide particle of KCl shape regulator, and it is realized according to the following steps:

[0017] 1. Pretreatment of carbon source: pretreatment of carbon source activation with hydrogen peroxide solution or activation of metal ion solution;

[0018] The hydrogen peroxide solution is subjected to pre-activation treatment: a hydrogen peroxide solution with a mass fraction of 10% to 50% is impregnated with a carbon source for 20 to 80 minutes, taken out, washed, and dried at 80°C for 30 to 50 minutes;

[0019] Pre-treatment of the metal ion solution activation: impregnating the carbon source with a metal ion solution with a concentration of 0.01-1mol / L for 10-80 minutes, taking it out, washing it, and drying at 80°C for 30-50 minutes; the metal ion solution is Ferric sulfate solution, ferrocene solution, nickel nitrate solution or nickel sulfate solution;

[0020] 2...

specific Embodiment approach 2

[0023] Embodiment 2: This embodiment differs from Embodiment 1 in that the carbon source in step 1 is carbon black, activated carbon, carbon graphite, carbonized sucrose, carbonized cellulose, carbonized glucose, graphene or graphene oxide. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0024] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the particle size of the carbon source in Step 1 is 10-100 nm. Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.

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Abstract

A preparation method of nano-silicon carbide particles based on KCl shape regulator, which belongs to the technical field of silicon carbide preparation and semiconductor material preparation, and aims to solve the problems of uncontrollable morphology and uneven particle size distribution in the preparation of existing silicon carbide powders , the problem of high particle agglomeration and low purity. Methods: 1. Pretreatment of carbon source; 2. Ball milling of carbon source, KCl and silicon source after pretreatment to obtain mixed material; 3. High temperature sintering of mixed material. By using KCl as a shape regulator, the present invention controls the shape and particle size of the product by controlling the nucleation and growth behavior of the gaseous intermediate product through the interaction with the carbon source and the silicon source treated before activation. The nanometer silicon carbide particles prepared in the present invention have the advantages of uniform powder particle morphology and diameter distribution, high purity and great prospect of industrial production. The invention is applied to the preparation of nano-scale silicon carbide particles.

Description

technical field [0001] The invention belongs to the technical fields of silicon carbide preparation and semiconductor material preparation, and in particular relates to a method for preparing nanometer silicon carbide particles based on a KCl shape regulator. Background technique [0002] Silicon carbide materials are an important class of semiconductor and structural ceramic materials. Silicon carbide is a rare inorganic non-metallic material that integrates structural performance and functionality, and has very important application significance. For example, compared with other organic membranes and traditional ceramic membranes, the performance of ceramic membranes is superior. At the same time, the preparation process is simple and the flexibility is high. It has broad application prospects in many fields such as food and pharmaceutical processing, seawater desalination, wastewater and waste gas treatment, bioengineering, and energy engineering. At present, the most mat...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/97C01B32/984B82Y40/00
CPCC01B32/97C01B32/984B82Y40/00C01P2002/72C01P2004/64C01P2004/01
Inventor 王志江
Owner 内蒙古海特华材科技有限公司