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Near-infrared spectral response polymer optical detection device containing non-fullerene receptor

A non-fullerene acceptor and near-infrared spectroscopy technology, which is applied in the manufacture of electrical solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as low efficiency and detection performance limitations, and achieve fast time response and good linearity relationship, the effect of a good detection rate

Active Publication Date: 2020-09-18
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the dark current density of such devices can be suppressed to 1nA cm -2 Below, but because the spectral absorption of fullerene derivative molecules is distributed in the short wavelength range, it is difficult for the device to obtain the best photocurrent density in the long wavelength range (>800nm), such as the literature (J.Mater.Chem.C, 2017, 5,159) has an external quantum efficiency of less than 10% in the long wavelength range (>800nm), so the detection performance of organic photodetection devices based on narrow-bandgap polymers and fullerene derivative molecules in the near-infrared spectrum is limited.

Method used

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Embodiment 1

[0045] Determination of performance of front-mount organic photodetection devices with organic photoactive layer thickness of 150nm

[0046] The present invention adopts such as figure 2 The shown device structure studies the performance of near-infrared spectrally responsive polymer photodetection devices containing non-fullerene acceptors. The preparation method of the device is as follows: using ultrasonic cleaning technology, the square resistance is 15-20Ωm -2 The transparent electrode indium tin oxide (ITO) glass surface is cleaned to remove surface impurities, among which ITO glass cleaning solution is washed once, acetone is washed once, deionized water is washed seven times, and absolute ethanol is washed once. Each cleaning lasts At least 20 minutes, and keep the temperature below 50 °C; ITO glass is dried and then plasma treated for 1 minute; spin-coat anodic interface modification layer poly(3,4-ethylenedioxythiophene) mixed polystyrene sulfonate (PEDOT: PSS), t...

Embodiment 2

[0054] Determination of performance of front-mount organic photodetection devices with organic photoactive layer thickness of 250nm

[0055] The present invention adopts such as figure 2 The shown device structure studies the performance of near-infrared spectrally responsive polymer photodetection devices containing non-fullerene acceptors. The preparation method of the device is as follows: using ultrasonic cleaning technology, the square resistance is 15-20Ωm -2 The transparent electrode indium tin oxide (ITO) glass surface is cleaned to remove surface impurities, among which ITO glass cleaning solution is washed once, acetone is washed once, deionized water is washed seven times, and absolute ethanol is washed once. Each cleaning lasts At least 20 minutes, and keep the temperature below 50 °C; ITO glass is dried and then plasma treated for 1 minute; spin-coat anodic interface modification layer poly(3,4-ethylenedioxythiophene) mixed polystyrene sulfonate (PEDOT: PSS), t...

Embodiment 3

[0059] (1) Performance measurement of organic photodetector devices with organic photoactive layer thickness of 350nm

[0060] The present invention adopts such as figure 2 The shown device structure studies the performance of near-infrared spectrally responsive polymer photodetection devices containing non-fullerene acceptors. The preparation method of the device is as follows: using ultrasonic cleaning technology, the square resistance is 15-20Ωm -2 The transparent electrode indium tin oxide (ITO) glass surface is cleaned to remove surface impurities, among which ITO glass cleaning solution is washed once, acetone is washed once, deionized water is washed seven times, and absolute ethanol is washed once. Each cleaning lasts At least 20 minutes, and keep the temperature below 50°C; ITO glass is dried and then plasma treated for 1 minute; spin-coat anodic interface modification layer 3,4-ethylenedioxythiophene mixed polystyrene sulfonate (PEDOT:PSS) on the ITO surface, The ...

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Abstract

The invention discloses a near-infrared spectral response polymer optical detection device containing a non-fullerene receptor. The device is composed of a substrate, a bottom electrode, a bottom electrode modification layer, an organic photoactive layer, a top electrode modification layer and a top electrode. And the organic photoactive layer is a bulk heterojunction film formed by blending a conjugated polymer Si25 with high hole mobility and non-fullerene receptor small molecules IEICO-4F. Based on good absorption spectrum complementation of the two materials, the device shows response characteristics in a spectral range of 300-1020 nm. By increasing the thickness of the photoactive layer, the dark current density of the device under reverse bias is as low as 4.4 * 10<-9> Acm<-2>. For near-infrared incident light with the wavelength of 940 nm, the detection rate of the device under reverse bias can reach 1.0 * 10<13> cmHz <1 / 2> W<-1>, and in the optical power range of more than 6 orders of magnitudes, the optical current density and the light intensity keep a good linear relation.

Description

technical field [0001] The invention belongs to the field of organic photoelectric materials and devices, in particular to a near-infrared spectrum responsive polymer photodetection device containing non-fullerene acceptors. Background technique [0002] Compared with traditional inorganic semiconductors, organic semiconductors based on conjugated polymers and small organic molecules have the advantages of light weight and low processing cost, which can be used to prepare large-area, flexible, and portable electronic devices, and are expected to become a new generation of semiconductor materials. Bulk heterojunction films formed by blending two or more organic semiconductor materials with complementary absorption spectra have broad-band absorption spectra. As the organic photoactive layer of devices, they are widely used in organic photodetection devices. According to the spectral response range of organic photodetection devices, the devices can be divided into visible light...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46
CPCH10K85/60H10K85/151H10K85/656H10K30/30Y02E10/549
Inventor 陈军武陈文鑫
Owner SOUTH CHINA UNIV OF TECH