Near-infrared spectral response polymer optical detection device containing non-fullerene receptor
A non-fullerene acceptor and near-infrared spectroscopy technology, which is applied in the manufacture of electrical solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as low efficiency and detection performance limitations, and achieve fast time response and good linearity relationship, the effect of a good detection rate
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0045] Determination of performance of front-mount organic photodetection devices with organic photoactive layer thickness of 150nm
[0046] The present invention adopts such as figure 2 The shown device structure studies the performance of near-infrared spectrally responsive polymer photodetection devices containing non-fullerene acceptors. The preparation method of the device is as follows: using ultrasonic cleaning technology, the square resistance is 15-20Ωm -2 The transparent electrode indium tin oxide (ITO) glass surface is cleaned to remove surface impurities, among which ITO glass cleaning solution is washed once, acetone is washed once, deionized water is washed seven times, and absolute ethanol is washed once. Each cleaning lasts At least 20 minutes, and keep the temperature below 50 °C; ITO glass is dried and then plasma treated for 1 minute; spin-coat anodic interface modification layer poly(3,4-ethylenedioxythiophene) mixed polystyrene sulfonate (PEDOT: PSS), t...
Embodiment 2
[0054] Determination of performance of front-mount organic photodetection devices with organic photoactive layer thickness of 250nm
[0055] The present invention adopts such as figure 2 The shown device structure studies the performance of near-infrared spectrally responsive polymer photodetection devices containing non-fullerene acceptors. The preparation method of the device is as follows: using ultrasonic cleaning technology, the square resistance is 15-20Ωm -2 The transparent electrode indium tin oxide (ITO) glass surface is cleaned to remove surface impurities, among which ITO glass cleaning solution is washed once, acetone is washed once, deionized water is washed seven times, and absolute ethanol is washed once. Each cleaning lasts At least 20 minutes, and keep the temperature below 50 °C; ITO glass is dried and then plasma treated for 1 minute; spin-coat anodic interface modification layer poly(3,4-ethylenedioxythiophene) mixed polystyrene sulfonate (PEDOT: PSS), t...
Embodiment 3
[0059] (1) Performance measurement of organic photodetector devices with organic photoactive layer thickness of 350nm
[0060] The present invention adopts such as figure 2 The shown device structure studies the performance of near-infrared spectrally responsive polymer photodetection devices containing non-fullerene acceptors. The preparation method of the device is as follows: using ultrasonic cleaning technology, the square resistance is 15-20Ωm -2 The transparent electrode indium tin oxide (ITO) glass surface is cleaned to remove surface impurities, among which ITO glass cleaning solution is washed once, acetone is washed once, deionized water is washed seven times, and absolute ethanol is washed once. Each cleaning lasts At least 20 minutes, and keep the temperature below 50°C; ITO glass is dried and then plasma treated for 1 minute; spin-coat anodic interface modification layer 3,4-ethylenedioxythiophene mixed polystyrene sulfonate (PEDOT:PSS) on the ITO surface, The ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 


