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Dielectric film, electronic component, thin film capacitor, and electronic circuit board

A technology of film capacitors and dielectric films, applied in the fields of film capacitors and electronic circuit substrates, dielectric films, and electronic components, can solve the problems of inability to have both withstand voltage characteristics and DC bias characteristics

Inactive Publication Date: 2020-10-02
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, in Patent Documents 1 and 2, withstand voltage characteristics and DC bias characteristics cannot be achieved at the same time.

Method used

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  • Dielectric film, electronic component, thin film capacitor, and electronic circuit board
  • Dielectric film, electronic component, thin film capacitor, and electronic circuit board
  • Dielectric film, electronic component, thin film capacitor, and electronic circuit board

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Embodiment

[0128] Next, the present invention will be described in more detail using examples and comparative examples. However, the present invention is not limited to the following examples.

[0129] (Example, comparative example)

[0130] First, a target for sputtering necessary for forming a dielectric film is produced by a solid phase method as follows.

[0131] Barium carbonate, strontium carbonate, calcium carbonate, titanium oxide, bismuth oxide, sodium carbonate, potassium carbonate, lanthanum hydroxide, cerium oxide, praseodymium oxide, neodymium oxide, samarium oxide, europium oxide, oxide Powder of gadolinium, terbium oxide, dysprosium oxide, holmium oxide, ytterbium oxide, yttrium oxide. For the first embodiment, these powders were weighed so that the atomic number of each metal became the composition shown in Table 1 and Table 2, and for the second embodiment, the atomic number of each metal became the composition shown in Table 3 and Table 4. These powders were weighed ...

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Abstract

This dielectric film is a dielectric film comprising an oxide having a perovskite structure. The oxide comprises (1) Bi, Na and Ti, (2) at least one of Ba and Ca, and (3) at least one element Ln selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb and Y. When ratios of the numbers of atoms of Bi, Ba and Ca to the total of the numbers of atoms of Bi, Na, Ba and Ca in theoxide are represented by XBi, XBa and XCa, respectively, the ratios satisfy 0.2<=XBi / (XBa+XCa)<=5.

Description

technical field [0001] The present invention relates to a dielectric film, an electronic component, a film capacitor and an electronic circuit substrate. Background technique [0002] Along with the miniaturization of electronic equipment, the installation space of electronic components allowed in electronic equipment also tends to decrease. Capacitors (capacitors, often called capacitors (condensers) in Japan) are electronic components mounted in most electronic devices, and they also need to be miniaturized and thinned. For film capacitors, compared with the conventional multilayer ceramic capacitors based on the thick film method, the base material, dielectric film, insulating film, etc. are thinner, and can achieve further thinning and low profile (low profile). Therefore, film capacitors are expected to be low-profile electronic components mounted in a small space. Furthermore, capacitors embedded in electronic component substrates have also been developed in recent y...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/33H01G4/10
CPCH01G4/10H01G4/33
Inventor 大槻史朗高桥和子佐藤和希子
Owner TDK CORPARATION
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