Electrode of flexible CIGS solar cell and manufacturing method

Abstract

The invention discloses an electrode of a flexible CIGS solar cell, which comprises an alloy layer, and one side of the alloy layer is connected with an aluminum layer. A preparation method of an electrode of a flexible CIGS solar cell is characterized by comprising the following steps: (1) taking a CIGS cell plated with an AZO film layer, and scribing a wire groove on the AZO film layer by usinglaser; (2) covering the top of the battery with the engraved wire groove with a mask plate, wherein the mask plate is hollowed out in a position corresponding to the wire groove; (3) then feeding intoa magnetron sputtering / evaporation process for physical vapor deposition, gradually decreasing the content of titanium in the titanium-aluminum alloy in the physical vapor deposition process, takingout the battery after the vapor deposition is finished, and removing the mask plate to obtain the battery passing through the physical vapor deposition electrode; and (4) bonding the electrode subjected to physical vapor deposition on the battery with the assembly bus bar. A composite transition multi-film-layer electrode design is adopted. And under the condition of ensuring that the Schottky barrier is relatively low, a relatively matched coefficient of thermal expansion is achieved.

Description

technical field [0001] The invention belongs to the technical field of thin-film solar cells, and in particular relates to an electrode of a flexible CIGS solar cell and a manufacturing method thereof. Background technique [0002] Copper-indium-gallium-selenide (CIGS) thin-film solar cells have a layered structure, and the absorbing material belongs to I-III-VI group compounds. The substrate is generally made of glass, and a flexible film substrate can also be used. Generally, vacuum sputtering, evaporation or other non-vacuum methods are used to deposit multi-layer thin films respectively to form a P-N structure to form a photoelectric conversion device. Starting from the light incident layer, each layer is: metal grid electrode, anti-reflection film, window layer (Zn0), transition layer (CdS), light absorption layer (CIGS), metal back electrode (Mo), and substrate. [0003] At present, the metal grid electrode technology of CIGS battery is divided into two types accordi...

AI Technical Summary

Problems solved by technology

[0010] 1. It is not easy to form an ohmic contact between the metal electrode and the ZnO semiconductor, there is a high Schottky barrier, and the resistivity is high, which affects the battery efficiency

[0011] 2. Due to the difference in thermal expansion coefficient, the top electrode prepared by the coating method is prone to open circuit during long-term use of the battery, resulting in battery failure

[0012] 3. The problem of electrode size design. The narrower design of the metal electrode leads to a smaller contact area of ​​the ZnO layer, resulting in a small current collection area, which is not conducive to the collection of photoelectric current when working with solar cells and is easy to break.

[0014] 1. Such as coated electrodes, there is a high Schottky barrier

[0015] 2. The contact area between the metal wire and the AZO layer is smaller, and the current collection ability is the worst

[0016] 3. The use of metal wires as electrodes for winding and hot pressing requires separate equipment, which reduces the integration of equipment and the manufacturing method is cumbersome

[0017] 4. A cavity is formed between the metal wire and the PET layer, causing the sunlight to pass through the PET and the light intensity of the electrode to decrease

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