Optical auxiliary induction heating self-crucible single crystal growth device and application thereof

Abstract

The invention relates to an optical auxiliary induction heating self-crucible single crystal growth device and an application thereof. A self-crucible is formed by combining discrete copper pipes filled with circulating water, a high-power optical heat source is used for heating to form a liquid pool, and controllable and clean melting starting of a melt is realized. Resistance heating or opticalheat source heating is selected to form a rear hot temperature zone to achieve crystal growth temperature gradient control, and traditional crystal growth technologies such as a pulling method and anedge-defined film-fed growth method are used for controllable and efficient growth of single crystals. According to the invention, a precious metal crucible is prevented from being used as a crystal growth container, precious metal loss is effectively overcome, and crystal growth cost is reduced. Crystal growth can be carried out in various atmospheres, and improvement of crystal quality and regulation and control of physical properties are facilitated. The problems that a solid-liquid interface needs to be maintained by surface tension and large-size crystals are difficult to grow in a pure optical floating zone method are solved. Optical heating is adopted, melting starting of raw materials is achieved, and the defects of impurity pollution, inclusion and the like caused by melting starting of graphite rods, metal rods and the like are avoided.

Description

technical field [0001] The invention relates to a large-size, high-melting-point, high-volatility single crystal growth device and method that do not require precious metal crucibles and metal igniters in an optical-assisted induction heating method, and belong to the technical field of crystal growth equipment. Background technique [0002] β-Ga 2 o 3 The forbidden band width is E g =4.8eV, as an ultra-wide bandgap semiconductor material, it has received widespread attention at home and abroad. Compared with third-generation semiconductor materials such as SiC and GaN, β-Ga 2 o 3 The bandgap width is larger, the breakdown field strength is higher, and more importantly, the material can be grown by the melt method, which has obvious advantages in the enlargement of single crystal size and the reduction of crystal cost. [0003] However, currently β-Ga 2 o 3 Single crystal growth methods mostly use precious metals such as iridium and platinum-rhodium alloys as crucible...

AI Technical Summary

Problems solved by technology

[0005] For the deficiencies of existing technologies, especially the traditional β-Ga 2 o 3 、Lu 2 o 3 The dependence of crystal growth methods and devices such as high melting point, high volatility, and high corrosion on precious metal crucibles, large loss of precious metal crucibles lead to large investment in crystal growth, high cost, and high defect density in crystals. The present invention provides an optical Auxiliary induction heating self-crucible single crystal growth device and method

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