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Silicon-based semiconductor PN junction structure, preparation method thereof, photocathode and application

A semiconductor and PN junction technology, applied in the field of silicon-based semiconductor PN junction structure and its preparation, can solve the problems of complex preparation process and high PN junction cost, and achieve the effects of improving separation efficiency, excellent stability and strong controllability

Active Publication Date: 2020-11-24
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve the technical problems of high cost and complicated preparation process for forming a PN junction by heavy doping on the surface of the existing single crystal silicon electrode, and provides a highly efficient and stable silicon-based semiconductor PN junction structure and its preparation method, and On this basis, a silicon-based semiconductor PN junction photocathode and its application are provided

Method used

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  • Silicon-based semiconductor PN junction structure, preparation method thereof, photocathode and application
  • Silicon-based semiconductor PN junction structure, preparation method thereof, photocathode and application
  • Silicon-based semiconductor PN junction structure, preparation method thereof, photocathode and application

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Embodiment 1

[0035] (1) Silicon wafer cleaning

[0036] Place the p-Si single crystal (100) silicon chip in the HF solution with a volume concentration of 1% and soak for 15s, rinse it with deionized water, N 2 Blow dry; this step can remove the SiO produced by self-oxidation on the surface of p-Si single crystal (100) silicon wafer 2 ;

[0037] (2)TiO 2 Preparation of anatase nanolayers

[0038] Will N 2 The blow-dried p-Si single crystal (100) silicon wafer is placed in the chamber of the atomic layer deposition system for deposition. The precursors are tetraisopropyl titanate and water to achieve the deposition of TiO on the surface of the p-type silicon substrate. 2 Nanocrystalline layer; the deposition temperature of atomic layer deposition is 270 ° C, the number of atomic layer deposition cycles is 850, TiO2 The nanocrystalline layer was deposited with a thickness of 26 nm.

[0039] (3) TiO 2 Anatase Nanolayer Reduction

[0040] The encapsulated p-Si / TiO 2 The heterojunction ...

Embodiment 2

[0047] Carry out preparation and reaction with embodiment 1 method, its difference is only that in step (2) atomic layer deposition cycle number is 350, TiO 2 The thickness of the nanocrystalline layer is 10nm.

Embodiment 3

[0049] Carry out preparation and reaction with embodiment 1 method, its difference is only in step (2) in atomic layer deposition cycle number 1200,, TiO 2 The thickness of the nanocrystalline layer is 36nm.

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Abstract

The invention belongs to the technical field of semiconductor electrodes. The invention discloses a silicon-based semiconductor PN junction structure, a preparation method thereof, a photoelectric cathode and application thereof, a TiO2 nanocrystal layer is deposited on the surface of a p-type silicon substrate, the TiO2 nanocrystal layer is subjected to reduction treatment and then forms Schottkycontact with the p-type silicon substrate, and a p-type silicon-titanium dioxide heterojunction structure is obtained; a Pt aid is loaded on a crystalline TiO2 nano layer to form a silicon-based semiconductor PN junction photocathode, and the photocathode is applied to hydrogen production by photolysis of water in a photoelectrochemical pool. The silicon-based semiconductor PN junction structurecan generate high photo-generated voltage and has high stability, the preparation method is simple and easy to implement and high in controllability, and large-scale production can be achieved; according to the silicon-based semiconductor PN junction photocathode, separation of photon-generated carriers is successfully promoted through the n-type TiO2 nanocrystal layer, the initial potential of the silicon-based photocathode is improved, and meanwhile the p-type silicon substrate is protected.

Description

technical field [0001] The invention belongs to the technical field of semiconductor electrodes, and in particular relates to a silicon-based semiconductor PN junction structure and its preparation method and application. Background technique [0002] As one of the most abundant and inexhaustible sources of energy, solar energy is a promising solution to the energy crisis. At present, the use of solar cells to generate electricity, or the use of solar-based photocatalytic water splitting to produce hydrogen are ideal ways to obtain energy in the future, and have broad development and application prospects. In the design of photoelectrodes, semiconductor materials with excellent light-absorbing ability, electron-transporting ability, and high stability and fewer defects are required as substrates to obtain greater photoelectric conversion efficiency. Single crystal silicon material has excellent light absorption ability (wavelength less than 930nm), charge transfer ability (...

Claims

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Application Information

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IPC IPC(8): H01G9/20B01J21/06B01J23/42
CPCH01G9/2031B01J21/063B01J23/42B01J35/39Y02E10/542Y02P70/50
Inventor 巩金龙李慧敏王拓刘珊珊
Owner TIANJIN UNIV