Support layer, preparation method thereof, composite membrane and application thereof
A technology of supporting layer and casting liquid, applied in the field of composite membrane, supporting layer and its preparation, can solve the problems of poor composite ability of supporting layer and thin film, poor permeability of supporting layer, complicated transfer process, etc., achieving controllable thickness and cost. Low, simple process effect
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[0046] figure 1 Show the preparation process flowchart of the support layer of an embodiment of the present invention; figure 1 As shown, the preparation method of the support layer includes: dissolving the polymer in a solvent to obtain a casting solution; coating the casting solution on the surface of a two-dimensional material film to obtain a pretreatment structure; and curing the pretreatment structure , forming a support layer on the surface of the two-dimensional material thin film.
[0047] According to the present invention, the transfer and support technology of the two-dimensional material film has always restricted its development and application. Taking single-layer or few-layer graphene as an example, traditional methods generally use mechanical pressing and polymethyl methacrylate (PMMA) to transfer it to the support layer. The transfer process is complicated and the resulting separation membrane has many impurities, many defects, The composite ability of the ...
Embodiment 1
[0069]1) The copper foil was electrochemically polished for 20 minutes, and after polishing, the copper foil was cleaned with deionized water and ethanol, and finally dried with nitrogen gas. The polished copper foil was placed in a CVD tube furnace, evacuated to a vacuum, 400 sccm of hydrogen was introduced and the temperature was raised, and the temperature was raised to 1025° C. in 1.5 hours, and kept for 1 hour for annealing. Pass into 4sccm methane then, keep 2 hours and carry out graphene growth. After the growth, the tube furnace was moved out of the high-temperature zone to cool down quickly, and the flow rate of hydrogen and methane was kept constant. After the tube furnace was cooled to room temperature, the graphene was taken out.
[0070] 2) After drying 8g of PVDF with a weight average molecular weight of 534,000, it was dissolved in 32g of N,N-dimethylacetamide at 80°C to form a uniform casting solution. After the casting solution is degassed, the casting solut...
Embodiment 2
[0077] 1) The copper foil was electrochemically polished for 20 minutes, and after polishing, the copper foil was cleaned with deionized water and ethanol, and finally dried with nitrogen gas. The polished copper foil was placed in a CVD tube furnace, evacuated to a vacuum, 400 sccm of hydrogen was introduced and the temperature was raised, and the temperature was raised to 1025° C. in 1.5 hours, and kept for 1 hour for annealing. Pass into 4sccm methane then, keep 2 hours and carry out graphene growth. After the growth, the tube furnace was moved out of the high-temperature zone to cool down quickly, and the flow rate of hydrogen and methane was kept constant. After the tube furnace was cooled to room temperature, the graphene was taken out.
[0078] 2) After drying 8g of PVDF with a weight average molecular weight of 534,000, it was dissolved in 32g of N,N-dimethylacetamide at 80°C to form a uniform casting solution. After the casting solution is degassed, the casting solu...
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Abstract
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