Acrylic resin and preparation method and application thereof

A technology of acrylic resin and acrylic monomer, which is applied in the field of photoresist, can solve the problems that cannot meet the requirements of 65nm photolithography process, and achieve the effect of reducing the concentration
CN112175133AActive Publication Date: 2021-01-05NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
Publication Date
2021-01-05

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Abstract

The invention provides acrylic resin as well as a preparation method and application thereof. The preparation method of the acrylic resin comprises the steps of mixing an acrylic monomer, cuprous bromide, a ligand, an initiator and a reducing agent in a reaction solvent, and then carrying out polymerization reaction, wherein the reducing agent is elemental silver, and the quantity of the reducingagent is sufficient. According to the preparation method of the acrylic resin, zero-valent elemental silver is used as a mild reducing agent, monovalent copper ions in the polymerization process can be kept constant, the active polymerization reaction process is controllable, and the acrylic resin generated through polymerization has lower number-average molecular weight distribution, for example,the number-average molecular weight distribution of the acrylic resin is less than 1.2.
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Description

technical field

[0001] The invention belongs to the technical field of photoresists, and in particular relates to an acrylic resin and its preparation method and application. Background technique

[0002] As a photosensitive material, photoresist is a key processing material for integrated circuit fine processing technology. Among them, acrylic resin, as a part of the photoresist composition, determines the performance of the photoresist, and is currently a hot spot in the research of photoresist materials.

[0003] With the continuous development of manufacturing technology, the technical requirements for photoresist are getting higher and higher. In order to meet the increasingly stringent process conditions, it is necessary to develop photoresist products with higher performance. Compared with traditional I-line, G-line, and KrF photoresists, ArF photoresist products have excellent resolution, which can reach below 90nm. ArF photoresist is composed of resin, photosensit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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