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Preparation method of noble metal loaded g-C3N4 photocatalyst

A photocatalyst, g-c3n4 technology, applied in metal/metal oxide/metal hydroxide catalyst, catalyst activation/preparation, physical/chemical process catalyst, etc., can solve the problem of small specific surface area and fast photogenerated carrier recombination , low utilization of visible light, etc., to achieve the effects of high product purity, simple preparation process and high yield

Active Publication Date: 2021-02-09
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

g-C3N4 can be directly obtained by roasting melamine, dicyandiamide, urea, thiourea and other cheap raw materials, but the obtained g-C3 N4 often has the disadvantages of small specific surface area, fast recombination of photogenerated carriers and low utilization rate of visible light.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Embodiment 1: a kind of precious metal load g-C 3 N 4 The preparation method of photocatalyst, concrete steps are as follows:

[0034] (1) Put urea and water with a mass ratio of 1:2 in a high-temperature and high-pressure reactor, raise the temperature to 180°C and react for 24 hours, then further raise the temperature and pressurize to the supercritical state of water, contact and react for 2 hours, and release the pressure to realize gas Liquid-solid separation, the solid material remaining in the kettle is the target g-C 3 N 4 , where the temperature of water in the supercritical state is 700°C, the pressure is 22.1MPa, the whole reaction process is under nitrogen atmosphere, and the flow rate is 18L / h;

[0035] (2) When the reaction kettle is cooled to 246°C, feed ethanol and chloroauric acid (gold element and g-C 3 N 4 The mass ratio is 1:100), in the supercritical state of ethanol (14.8MPa), reacted for 125min, terminated the reaction, released the pressure ...

Embodiment 2

[0036] Embodiment 2: a kind of precious metal load g-C 3 N 4 The preparation method of photocatalyst, concrete steps are as follows:

[0037] (1) Put melamine and water with a mass ratio of 1:10 in a high-temperature and high-pressure reactor, raise the temperature to 220°C and react for 12 hours, then further raise the temperature and pressurize to a supercritical state, contact the reaction for 6 hours, and release the pressure to achieve gas-liquid-solid Separation, the solid material remaining in the still body is the target g-C 3 N 4 , where the temperature of water in the supercritical state is 400°C, the pressure is 32MPa, the whole reaction process is under argon atmosphere, and the flow rate is 15L / h;

[0038] (2) When the reaction kettle is cooled to 290°C, feed ethanol and platinum tetrachloride (platinum element and g-C 3 N 4 The mass ratio is 1:80), in the supercritical state of ethanol (12.5MPa) react 105min, terminate the reaction, release the pressure and ...

Embodiment 3

[0039] Embodiment 3: a kind of noble metal load g-C 3 N 4 The preparation method of photocatalyst, concrete steps are as follows:

[0040] (1) Put cyanamide and water with a mass ratio of 1:5 in a high-temperature and high-pressure reactor, raise the temperature to 165°C and react for 6 hours, then further raise the temperature and pressurize to a supercritical state, contact and react for 4 hours, and release the pressure to realize gas-liquid Solid separation, the solid material remaining in the kettle body is the target g-C 3 N 4 , where the temperature of water in the supercritical state is 500°C, the pressure is 26MPa, the whole reaction process is under helium atmosphere, and the flow rate is 12L / h;

[0041] (2) When the temperature of the reactor is lowered to 288°C, methanol and silver nitrate (silver element and g-C 3 N 4 The mass ratio is 1:10), reacted in the supercritical state of methanol (12.5MPa) for 20min, terminated the reaction, released the pressure and...

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PUM

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Abstract

The invention discloses a preparation method of a noble metal loaded g-C3N4 photocatalyst, and relates to the technical field of photocatalysts. The method comprises the following steps: carrying outsupercritical water treatment on a g-C3N4 precursor in a closed reaction kettle to obtain a target g-C3N4 after the reaction is finished; when the reaction kettle is cooled to a certain temperature, introducing an organic solvent and noble metal salt, contacting with g-C3N4 in a supercritical state of the organic solvent to react, after the reaction is finished, releasing pressure to realize gas-solid-liquid separation, and recovering the organic solvent to obtain the noble metal loaded g-C3N4 photocatalyst. According to the preparation method, the product g-C3N4 is obtained under different reaction atmospheres by utilizing the characteristics of excellent expansion, hydrolysis, oxidation and gas intersolubility of supercritical water; in addition, by utilizing the outstanding dispersity and reducibility of the supercritical organic matter, the highly-dispersed loaded catalyst noble metal / g-C3N4 is obtained. The method is completed in stages in the same closed kettle body, the productyield and purity are high, the organic solvent can be recycled, the operation is simple, and the process cost is saved.

Description

technical field [0001] The invention relates to the technical field of photocatalysts, in particular to a noble metal supported g-C 3 N 4 Preparation method of photocatalyst. Background technique [0002] Photocatalytic technology based on semiconductor materials is known as a green new technology and an ideal way to solve human energy shortage and environmental pollution. As an energy-efficient and green technology, semiconductor photocatalysis technology has unique advantages in degrading organic pollutants, photolyzing water to produce hydrogen, and reducing carbon dioxide. Traditional semiconductor photocatalyst TiO 2 , due to the wide band gap and low utilization rate of visible light, it can only absorb ultraviolet light accounting for 4% of solar energy, which limits its further practical application. [0003] g-C 3 N 4 (Graphite phase carbon nitride) is a non-metal organic polymer semiconductor material, because of its narrow band gap, response to visible light...

Claims

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Application Information

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IPC IPC(8): B01J27/24B01J23/52B01J23/46B01J23/44B01J23/42B01J23/50B01J37/10C02F1/30C02F101/30C02F101/36C02F101/38
CPCB01J27/24B01J23/52B01J23/462B01J23/44B01J23/42B01J23/50B01J37/10C02F1/30C02F2101/30C02F2101/36C02F2101/38C02F2101/40C02F2305/10C02F2101/308B01J35/394B01J35/39
Inventor 李菊英张月超钱正芳丁腾达钱毅光高小中程亚楠黄晓桐潘伟杰
Owner SHENZHEN UNIV