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Bismuth telluride nanowire with zigzag structure and preparation method of bismuth telluride nanowire

A bismuth telluride nanometer and zigzag technology, applied in chemical instruments and methods, selenium/tellurium compounds, metal selenides/tellurides, etc., can solve problems such as energy efficiency that is difficult to meet commercial applications

Pending Publication Date: 2021-02-09
XI'AN PETROLEUM UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the shortcoming of above-mentioned prior art, provide a kind of bismuth telluride nanowire of zigzag structure and preparation method thereof, to solve the Bi 2 Te 3 As a traditional thermoelectric material, its energy efficiency is difficult to meet the problem of commercial application

Method used

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  • Bismuth telluride nanowire with zigzag structure and preparation method of bismuth telluride nanowire
  • Bismuth telluride nanowire with zigzag structure and preparation method of bismuth telluride nanowire
  • Bismuth telluride nanowire with zigzag structure and preparation method of bismuth telluride nanowire

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Experimental program
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Effect test

Embodiment 1

[0040] Step 1, the TeO of 0.1596g (1mmol) 2, 0.5g PVP and 3.74g (8mmol) KOH, mixed and dissolved in 20ml EG at room temperature, fully dissolved into a transparent liquid by magnetic stirring; then poured into a 100ml three-necked bottle, under nitrogen protection, circulating water cooling and Under the condition of magnetic stirring, heat the mixed solution to 160°C, quickly inject 3ml of hydrazine hydrate, keep it warm for 1 hour, then lower the temperature to 120°C for use;

[0041] Step 2, 0.310g (0.33mmol) bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 O) The particles are mixed with 5ml of ethylene glycol, and the mixed solution is heated to 120° C. under magnetic stirring. When the solution is colorless and transparent, the Bi precursor solution at 120° C. is hot-injected into the Te nanowire solution with a syringe. Subsequently, 3 ml of concentrated hydrochloric acid with a concentration of 35% was injected into the mixed solution, kept for 2 hours, and then natu...

Embodiment 2

[0046] Step 1, the TeO of 0.2394g (1.5mmol) 2 , 0.75g PVP and 5.6g (10mmol) KOH, mixed and dissolved in 30ml EG at room temperature, fully dissolved into a transparent liquid by magnetic stirring; then poured into a 100ml three-necked bottle, under nitrogen protection, circulating water cooling and Under the condition of magnetic stirring, heat the mixed solution to 160°C, quickly inject 4.5ml of hydrazine hydrate, keep it warm for 1 hour, then lower the temperature to 120°C for use;

[0047] Step 2, at the same time, bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 O) The particles are mixed with 5ml of ethylene glycol, and the mixed solution is heated to 120° C. under magnetic stirring. When the solution is colorless and transparent, the Bi precursor solution at 120° C. is hot-injected into the Te nanowire solution with a syringe. Inject 4.5ml of concentrated hydrochloric acid with a concentration of 35% into the mixed solution subsequently, and naturally cool to room temp...

Embodiment 3

[0051] Step 1, the TeO of 0.4788g (3mmol) 2 , 1.5g PVP and 11.2g (20mmol) KOH, mixed and dissolved in 60ml EG at room temperature, fully dissolved into a transparent liquid by magnetic stirring; then poured into a 200ml three-necked bottle, under nitrogen protection, circulating water cooling and Under the condition of magnetic stirring, heat the mixed solution to 160°C, quickly inject 8ml of hydrazine hydrate, keep it warm for 1 hour, then lower the temperature to 120°C for use;

[0052] Step 2, at the same time, bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 O) The particles are mixed with 10ml of ethylene glycol, and the mixed solution is heated to 120° C. under magnetic stirring. When the solution is colorless and transparent, the Bi precursor solution at 120° C. is hot-injected into the Te nanowire solution with a syringe. Inject 8ml concentration into the mixed solution subsequently and be the concentrated hydrochloric acid of 35%, naturally cool to room temperature ...

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Abstract

The invention discloses a bismuth telluride nanowire with a zigzag structure and a preparation method of the bismuth telluride nanowire. A solvothermal synthesis method is adopted; tellurium oxide, polyvinylpyrrolidone and potassium hydroxide are mixed and dissolved in ethylene glycol; oxygen in an obtained solution is removed in an inert gas protection environment; the solution is heated to a certain temperature, hydrazine hydrate is added, and heat preservation is conducted for a period of time; and a mixed solution of sodium bismuthate pentahydrate and ethylene glycol is added, and at the same time, injecting a certain amount of concentrated hydrochloric acid, and performing a reaction to obtain the bismuth telluride nanowire with the zigzag structure. According to the bismuth telluridenanowire with the zigzag structure and the preparation method of the bismuth telluride nanowire of the invention, the lattice thermal conductivity of the material can be significantly reduced under the condition of maintaining high conductivity.

Description

【Technical field】 [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a bismuth telluride nanowire with a zigzag structure and a preparation method thereof. 【Background technique】 [0002] Thermoelectric conversion technology can utilize the intrinsic transmission characteristics of materials to realize mutual conversion between thermal energy and electrical energy. This technology has the advantages of no pollution, no noise, long life and high reliability, and is an ideal green and environmentally friendly all-solid-state energy utilization method. However, the current thermoelectric technology still has the problem of low conversion efficiency. [0003] The conversion efficiency of a thermoelectric module mainly depends on the dimensionless thermoelectric figure of merit of the material, ZT=(α 2 σ / κ)·T, where T is the temperature, σ, α, and κ represent the electrical conductivity, Seebeck coefficient, and thermal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00C04B35/547C04B35/622C30B28/04C30B29/46
CPCC01B19/007C04B35/547C04B35/622C30B28/04C30B29/46C01P2004/16C01P2004/03C01P2004/04C01P2002/72C01P2006/32C04B2235/666C04B2235/656C04B2235/6567C04B2235/9607
Inventor 刘帅刘迎港陈国祥
Owner XI'AN PETROLEUM UNIVERSITY
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