Diester structure monomer, preparation method thereof and application

A technology of monomer and esterification reaction, which is applied in the field of photoresist, can solve the problems of poor adhesion and film formation, poor adhesion and film formation, and unsatisfactory performance of photoresist, and achieve hardness and brittleness. Effects of low product, high deprotection reaction efficiency and plasticity

Inactive Publication Date: 2021-02-09
NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies in the prior art, provide a kind of diester structure monomer and preparation method thereof, to solve the existing film-forming resin due to the lack of monomer structure contained in the existence of poor adhesion and film-forming properties. Technical problems of poor and po

Method used

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  • Diester structure monomer, preparation method thereof and application
  • Diester structure monomer, preparation method thereof and application
  • Diester structure monomer, preparation method thereof and application

Examples

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preparation example Construction

[0036] On the other hand, the embodiment of the present invention provides the preparation method of the above-mentioned diester structure monomer. The technical process of the preparation method of the diester structure monomer is as follows figure 1 shown, including the following steps:

[0037] S01: dissolving glycolate esters in a reaction solvent to prepare a glycolate ester solution;

[0038] S02: In a protective atmosphere, after the glycolic acid ester solution and triethylamine are mixed and treated, cooling treatment is performed to form a mixed solution;

[0039]S03: Keep the protective atmosphere unchanged, add the methacryloyl chloride to the mixed solution for esterification reaction, and generate the diester structure monomer shown in the following general formula I:

[0040]

[0041] Wherein, R in the general formula I is methyl, ethyl, propyl, butyl, pentyl, aryl, phenyl, Any of an adamantyl group and an alkyl group containing a polycyclic structure.

...

Embodiment 1

[0064] This example provides a 2-methoxy-2-oxyethyl methacrylate diester structural monomer and a preparation method thereof. The preparation method of 2-methoxy-2-oxyethyl methacrylate comprises the following steps:

[0065] S1: Add 0.90 g of methyl glycolate into the Schlenk bottle and wash with N 2 Fully replace the system in the bottle to make it full of N 2 atmosphere;

[0066] S2: 75ml of dichloromethane, an organic solvent that removes water, was placed in N 2 Under protection, join in the above-mentioned Schlenk bottle, stir to make its methyl glycolate dissolve completely;

[0067] S3: at N 2 Under protection, 10.1g triethylamine is added in above-mentioned Schlenk bottle, and Schlenk bottle is placed on the cooling of ice-water bath;

[0068] S4: at N 2 Under protection, drop 10.4g of methacryloyl chloride into the Schlenk bottle in the ice-water bath at a rate of 0.01ml / s, and keep stirring;

[0069] S5: After the dropwise addition, continue to 2 Under prote...

Embodiment 2

[0072] This example provides a 2-isopropoxy-2-oxyethyl methacrylate diester structural monomer and a preparation method thereof. The preparation method of 2-isopropoxy-2-oxyethyl methacrylate comprises the following steps:

[0073] S1: 11.8 g of isopropyl glycolate was added to the Schlenk bottle and washed with N 2 Fully replace the system in the bottle to make it full of N 2 atmosphere;

[0074] S2: Dichloromethane 60ml, an organic solvent that removes water, was placed in N 2 Under protection, join in the above-mentioned Schlenk bottle, stir to make its isopropyl glycolate dissolve completely;

[0075] S3: at N 2 Under protection, 11.2g triethylamine is added in the above-mentioned Schlenk bottle, and Schlenk bottle is placed on the cooling of ice-water bath;

[0076] S4: at N 2 Under protection, 11.6g of methacryloyl chloride was dropped into the aforementioned Schlenk bottle in the ice-water bath at a rate of 0.05ml / s, and kept stirring;

[0077] S5: After the drop...

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Abstract

The invention provides a diester structure monomer, a preparation method thereof and application of an ArF photoresist formula. The preparation method of the diester structure monomer comprises the following steps of: dissolving glycolate in a reaction solvent to prepare a glycolate solution; mixing the glycolate solution with triethylamine in a protective atmosphere, and performing cooling to form a mixed solution; and keeping the protective atmosphere unchanged, and adding methacryloyl chloride into the mixed solution to carry out esterification reaction, thereby generating the diester structure monomer. According to the preparation method of the diester structure monomer, the generated diester structure monomer has a diester long side chain and a group with small size and high acid sensitivity; resin synthesized by the diester structure monomer is endowed with better adhesive force and film-forming property, deprotection reaction efficiency and plasticity, and the hardness and brittleness of the resin are improved. And the prepared diester acid protection structure monomer has the advantages of higher yield, low by-product content and easiness in separation and purification.

Description

technical field [0001] The invention belongs to the technical field of photoresists, and in particular relates to a diester structure monomer and its preparation method and application. Background technique [0002] Photoresist is a photosensitive polymer material with high sensitivity to light and radiation. It is mainly used in the micrographic processing of integrated circuits and semiconductor discrete devices, and the production of flat panel displays in the field of optoelectronics. With the continuous development of electronic devices in the direction of high integration and high speed, the role of photoresist is becoming more and more important. Photoresists are generally composed of film-forming resins, photosensitizers, solvents and additives, among which film-forming resins are one of the important components of photoresists and play a decisive role in the performance of photoresists. [0003] Currently used film-forming resins are mainly divided into three categ...

Claims

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Application Information

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IPC IPC(8): C07C69/675C07C67/31C08F220/18C08F220/28G03F7/004
CPCC07C69/675C07C67/31C08F220/1805G03F7/004C08F220/283C08F220/1808C07C67/14C07C2601/08C08F220/282C07C69/54C07C67/08C08J5/18C08J2333/04C08L33/04
Inventor 余绍山顾大公许东升方涛李庆伟马潇毛智彪许从应
Owner NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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