Preparation method of wavelength selective response type photoelectric detector
A photodetector, wavelength-selective technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem that incident photons cannot selectively identify response signals
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Embodiment 1
[0033]The preparation method of the wavelength selective response of the photodetector, including the following steps:
[0034]1) RCA standardized cleaning of the transparent substrate;
[0035]2) Treatment of ultraviolet-ozone treatment on the substrate after cleaning;
[0036]3) Self-assembly arrangement of polystyrene micro / nanospheres having a raw diameter of 200 to 4000 nm on the quartz glass substrate;
[0037]4) The reactive ion beam etching is carried out to the reactive ion beam etching for the macrosphere array of macroblus, so that the diameter is reduced as 30% to 70% of the original value;
[0038]5) The quartz glass covered with a decreased polystyrene microd / nanosphere array is a substrate, and the electron beam tapipites / gold film, and the thickness is from 0 to 5 nm and 50 to 150 nm, respectively;
[0039]6) Remove the polystyrene micro / nanosphere array to obtain different sizes of nanoporous patterning gold film layer. Different sizes of nanopore patterning gold film deposit...
Embodiment 2
[0052]Method for preparing a photodetector of wavelength selective response compared to an example,
[0053]Replace step 5): quartz glass covered with a decreased polystyrene microd / nanosphere array, using electron beam touched chrome / silver (or chromium / aluminum) film, thickness is 0 ~ 5 nm, respectively, and 50 ~ 150 nm.
[0054]Replace step 7): quartz glass covered with a nanoporous patterned metal film is a substrate, using a common evaporation method or a plasma reaction method to deposit a P-type (or sedimentary n-type) in the nanopore pattern. P-type) amorphous, microcrystalline silicon, Cu (in, ga) SE2Cuinse2Cuinte2Aginse2Or agalte2film. By regulating the doping concentration of the semiconductor material directly in contact with the nanopore pattern metal film layer, the p-type semiconductor film forms a Schottky contact with silver (or aluminum); when deposited by N, P-type semiconductor film, nanohole pattern The silver (or aluminum) film forms ohmic contact with the n-ty...
Embodiment 3
[0056]Method for preparing a photodetector of wavelength selective response compared to an example,
[0057]The photosensitive semiconductor material layer is not a substrate that is substrate in a nanoporous pattern of a metal film layer, but directly adopts the growth of N-type or PN junction silicon, germanium, gallium arsenide, indium gallium arsenic or phosphorus. The indium sub-wafer is a photosensitive layer. The main process of prepared includes:
[0058]1) Directly employ the front side of the N-type or PN junction semiconductor single wafer and a nanoporous pattern of quartz glass as a substrate [Preparation steps to 1) to step 1) to step 6)] Close fit. By simulation, the transmission spectrum of quartz glass covered by the metal film layer through the nanohole is likeFigure 6 As shown (at this time, the corresponding nanopore period is 550 nm, the diameter is 280 nm, the thickness is 100 nm, and the light is exposed in the exposed glass surface).
[0059]2) In the back surface of ...
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