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Aluminum nitride film, preparation method and application

An aluminum nitride, thin film technology, applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., can solve problems such as high vacuum and expensive equipment, and achieve high mobility, low cost, and high quality.

Pending Publication Date: 2021-04-30
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of these methods require expensive equipment and strict reaction conditions such as high vacuum

Method used

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  • Aluminum nitride film, preparation method and application

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Embodiment 1

[0019] The preparation method of the aluminum nitride thin film comprises: first cleaning the silicon wafer according to the standard RCA cleaning process, and then drying the silicon wafer with nitrogen gas. Then put the silicon wafer into the mask plate in the thermal evaporation equipment. The evaporation source in the thermal evaporation equipment is aluminum wire, the purity of which is greater than 99.99%, and a layer of aluminum film with a thickness of 20nm is thermally evaporated. Then put the silicon wafer covered with aluminum film into the cavity of the rapid annealing equipment, pass nitrogen gas, raise it to 800 degrees Celsius within 10 seconds, and keep it warm for 60 seconds. After it cools down, take out the sample, and the aluminum nitride film can be obtained. The measured effective minority carrier lifetime of the silicon wafer can reach 50μs. The aluminum nitride thin film prepared in the embodiment of the present application has a thickness of about 20 ...

Embodiment 2

[0022] The preparation method of the aluminum nitride thin film comprises: first cleaning the silicon wafer according to the standard RCA cleaning process, and then drying the silicon wafer with nitrogen gas. Then put the silicon wafer into the mask plate in the thermal evaporation equipment. The evaporation source in the thermal evaporation equipment is aluminum wire, the purity of which is greater than 99.99%, and a layer of aluminum film with a thickness of 10nm is thermally evaporated. Then put the silicon wafer covered with aluminum film into the cavity of the rapid annealing equipment, pass nitrogen gas, raise it to 600 degrees Celsius within 8 seconds, and keep it warm for 20 seconds. After it cools down, take out the sample, and the aluminum nitride film can be obtained. Such as figure 1 As shown, the measured effective minority carrier lifetime of the silicon wafer can reach 68μs. The aluminum nitride thin film prepared in the embodiment of the present application h...

Embodiment 3

[0024] The preparation method of the aluminum nitride thin film comprises: preparing the aluminum nitride thin film on the sapphire. First, clean the sapphire substrate, and then put the sapphire into the thermal evaporation equipment. The evaporation source in the thermal evaporation equipment is aluminum wire. The purity of the aluminum wire is greater than 99.99%. A layer of aluminum film with a thickness of 50nm is deposited. Then put the sapphire covered with aluminum film into the cavity of the rapid annealing equipment, pass nitrogen gas, raise it to 600 degrees Celsius within 8 seconds, and keep it warm for 300 seconds. After it cools down, take out the sample, and the aluminum nitride film can be obtained. The aluminum nitride thin film prepared in the embodiment of the present application has a thickness of about 50 nm, and the aluminum nitride thin film can be used as a passivation layer to reduce the interface defect density of sapphire.

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Abstract

The invention belongs to the field of semiconductor materials and devices, and relates to an aluminum nitride film, a preparation method and application. The preparation method comprises the following steps that 1, a substrate is cleaned and dried with nitrogen; 2, the substrate cleaned in Step 1 is fixed to a mask plate of thermal evaporation equipment and then placed into the thermal evaporation equipment to deposit an aluminum film with a certain thickness; and 3, after thermal evaporation is finished, the substrate with the surface plated with the aluminum film is placed in a rapid annealing furnace, then protective atmosphere is introduced, heating is conducted, heat preservation is conducted for a certain time, and the aluminum nitride film can be obtained after the substrate is cooled. The preparation method is simple and low in cost, and preparation of the high-quality aluminum nitride film is achieved. The aluminum nitride film can be used for passivating the surfaces of semiconductors such as silicon, germanium, gallium arsenide and the like, and can also be used as an interface transition layer material for preparing devices such as solar cells, light-emitting diodes, photoelectric detectors, transistors and the like.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and devices, and relates to various aluminum nitride films, preparation methods and applications. Background technique [0002] Semiconductor materials are important materials for the production of integrated circuits, microelectronic devices and optoelectronic devices, supporting the development of electronic information industries such as computers and communications and new energy industries. Silicon, gallium arsenide, and gallium nitride are the first-generation, second-generation, and third-generation semiconductor materials, respectively, with bandgap widths of 1.1eV, 1.5eV, and 3.4eV, respectively. Wide bandgap semiconductor materials usually have higher electron mobility, higher temperature resistance and radiation resistance, and are suitable for the preparation of high-speed and high-power electronic and optoelectronic devices. [0003] When semiconductor materials such as silicon...

Claims

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Application Information

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IPC IPC(8): C23C14/24C23C14/04C23C14/16C23C14/18C23C14/58H01L21/02
CPCC23C14/042C23C14/16C23C14/18C23C14/24C23C14/5806C23C14/586H01L21/02178H01L21/02269H01L21/02318
Inventor 王朋刘粲余学功陈军崔灿
Owner ZHEJIANG SCI-TECH UNIV