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Hydrothermal preparation method of semiconductor metal oxide WO3 and application of WO3

A semiconductor and oxide technology, applied in the field of hydrothermal preparation of semiconductor metal oxide WO3, can solve problems such as complicated operation, and achieve the effects of simple operation, simple post-processing and high purity

Inactive Publication Date: 2021-05-11
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

WO prepared by this method 3 The morphology is greatly affected by the type, concentration and pH of the salt solution, and the operation is relatively complicated

Method used

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  • Hydrothermal preparation method of semiconductor metal oxide WO3 and application of WO3
  • Hydrothermal preparation method of semiconductor metal oxide WO3 and application of WO3

Examples

Experimental program
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Effect test

Embodiment 1

[0023] Weigh 1.5mmol of sodium tungstate dihydrate and dissolve it in 15mL of water to prepare an aqueous solution of sodium tungstate dihydrate with a concentration of 0.1mmol / mL, then add thiourea and hydroxylamine hydrochloride, sodium tungstate dihydrate and thiourea, and tungsten dihydrate The molar ratios of sodium hydroxide and hydroxylamine hydrochloride are 1:5 and 1:3 respectively, stirred and ultrasonically oscillated to dissolve and mix thoroughly, the solution is transferred to a reaction kettle, and reacted hydrothermally at 200°C for 12 hours, and the reaction product is mixed with water and ethanol After washing, dry in vacuum, heat up to 500°C at 2°C / min in a tube furnace, and anneal for 2 hours to obtain a light green tungsten trioxide material, and its X-ray powder diffraction pattern is as follows: figure 1 As shown, with monoclinic WO 3 Standard cards fit.

Embodiment 2

[0025] Weigh 1.5mmol of sodium tungstate dihydrate and dissolve it in 15mL of water to prepare an aqueous solution of sodium tungstate dihydrate with a concentration of 0.1mmol / mL, then add thioacetamide and hydroxylamine hydrochloride, sodium tungstate dihydrate and thioacetamide The molar ratios of sodium tungstate dihydrate and hydroxylamine hydrochloride are 1:2 and 1:2 respectively. Stir and ultrasonically oscillate to dissolve and mix thoroughly. The solution is transferred to a reaction kettle and reacted hydrothermally at 200°C for 12 hours. The reaction product After washing with water and ethanol, vacuum-dry, heat up to 500°C in a tube furnace at 5°C / min, and anneal for 2 hours to obtain a light green tungsten trioxide material. The scanning electron microscope image is as follows figure 2 As shown, it is a wide range of high-purity nanorods, the two end diameters are 20nm and 400nm, and the length is 5μm.

Embodiment 3

[0027] Weigh 1.5mmol of sodium tungstate dihydrate and dissolve it in 15mL of water to prepare a sodium tungstate dihydrate aqueous solution with a concentration of 0.1mmol / mL, and then add thiourea. The molar ratios of sodium tungstate dihydrate and thiourea are respectively 1: 5. Stir and ultrasonically oscillate to dissolve and mix thoroughly, transfer the solution to a reaction kettle, and conduct a hydrothermal reaction at 240°C for 24 hours. The reaction product is washed with water and ethanol and dried in vacuum, and the temperature is raised in a tube furnace at 3°C / min To 500°C, anneal for 4 hours to produce tungsten trioxide material, which is a wide range of high-purity nanorods, the diameters of the two ends are 5nm and 300nm, and the length is 15μm.

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Abstract

The invention relates to a hydrothermal preparation method of a semiconductor metal oxide WO3. The method comprises the following steps: fully mixing sodium tungstate dihydrate with an ammonium source, carrying out a hydrothermal reaction at a proper temperature, purifying, and roasting at a high temperature to prepare the WO3 nano material. According to the invention, nanorods with different lengths can be prepared by adjusting the ratio of an ammonium source to a sodium tungstate dihydrate; the preparation method is easy to operate, mild in condition, low in cost and suitable for mass production; and the prepared material is uniform, stable and high in purity and has good development and application prospects in the fields of gas sensing, optical and electrical devices and the like.

Description

technical field [0001] The invention belongs to the technical field of inorganic material preparation, in particular to a semiconductor metal oxide WO 3 hydrothermal preparation method. Background technique [0002] Nanomaterials are an important class of inorganic materials, which refer to materials that have at least one dimension in a three-dimensional space that is in nanometer size or consists of them as basic units. Because the size of the material is close to the wavelength and the special effect of the large specific surface area, its melting point, magnetism, optics, electrical conductivity, thermal conductivity and other properties have certain changes, so it has a wide range of applications in electronic equipment, medical devices, medical diagnosis, etc. . Nano WO 3 It is a typical n-type semiconductor material with a relatively narrow band gap, high visible light activity, low valence band position, strong oxidation ability of photogenerated holes, and stable...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G41/02B82Y40/00
CPCB82Y40/00C01G41/02C01P2002/72C01P2004/03C01P2004/16
Inventor 冯亮胡琪
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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