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Schottky diode hydrogen sensor core

A Schottky diode and sensor core technology, applied in the field of hydrogen sensors, can solve the problems of unfavorable hydrogen sensitive performance, increase energy consumption, reduce the hydrogen sensitive performance of Schottky diode hydrogen sensitive core body, etc., and achieve excellent anti-humidity interference performance. , to solve the effect of decreased sensitivity

Active Publication Date: 2021-05-28
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Special attention should be paid to the fact that the water vapor in the atmospheric environment at room temperature has a greater adverse effect on the hydrogen sensitivity of the Schottky diode hydrogen sensor, and the humidity can greatly reduce the cracking of ordinary hydrogen by metal layer-semiconductor structure Schottky diodes Hydrogen Sensitive Performance of Hydrogen Sensitive Core
Increasing temperature can solve the adverse effect of humidity on hydrogen sensitivity, but it increases energy consumption, and it is easy to trigger the rapid reaction of hydrogen and oxygen, which brings new safety hazards

Method used

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  • Schottky diode hydrogen sensor core
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  • Schottky diode hydrogen sensor core

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] ① Cut out a metal titanium sheet, after degreasing treatment, put it in a tube furnace and oxidize it at 680°C for 2 hours in the air atmosphere, and prepare titanium dioxide (TiO2) on the surface of the titanium sheet. 2 ) semiconductor layer.

[0033] ② Ultrasonic disperse 75mg of graphite oxide (GO) powder in 150mL of absolute ethanol to obtain a graphene oxide-ethanol dispersion with a concentration of 0.5mg / mL. 2 The titanium sheet of the semiconductor layer is used as the electrophoretic positive electrode, and the inert metal sheet or graphite sheet is used as the electrophoretic negative electrode. Graphene oxide is deposited on the TiO under the conditions of a deposition voltage of 50V and a deposition time of 60min. 2 surface of the semiconductor layer.

[0034] ③A platinum (Pt) target with a purity of 99.99% (mass fraction) is installed on the cathode target of the magnetron sputtering system, and the sample obtained in the above two steps is placed in the ...

Embodiment 2

[0038] ①Cut a piece of aluminum foil to serve as the current collector layer, use metal tungsten (W) as the target by magnetron sputtering, and use a mixed gas of argon and oxygen to deposit tungsten trioxide (WO) on one side of the aluminum foil. 3 ) film, get WO 3 semiconductor layer.

[0039] ② Ultrasonic disperse 30mg of boron nitride nanosheets in 300mL of isopropanol to obtain a boron nitride dispersion, add 1mL of the ethanol dispersion of boron nitride nanosheets to WO 3 On the surface of the semiconductor layer, a boron nitride layer capable of blocking the diffusion of hydroxyl groups is obtained.

[0040] ③A palladium (Pd) target with a purity of 99.99% (mass fraction) is installed on the cathode target of the magnetron sputtering system, and the samples obtained in the above two steps are placed in the cavity, and the surface of the boron nitride layer is sputtered with Pd , to obtain the hydrogen cracked metal Pd layer.

[0041] ④Finally, the fine copper wire (...

Embodiment 3

[0044] ① Intercept a piece of Cu foil to serve as the current collector layer, use the magnetron sputtering method to use metal tin (Sn) as the target, and use a mixed gas of argon and oxygen to deposit tin dioxide (SnO2) on one side of the aluminum foil. 2 ) film, get SnO 2 semiconductor layer.

[0045] ②In SnO 2 Silicon nitride is deposited on the surface of the semiconductor layer by magnetron sputtering to obtain a silicon nitride layer that can block the diffusion of hydroxyl groups.

[0046] ③A platinum-iridium alloy (Pt-Ir) target with a purity of 99.99% (mass fraction) was installed on the cathode target of the magnetron sputtering system, and the samples obtained in the above two steps were placed in the cavity, and the SnO 2 The surface of the layer is sputtered with a platinum-iridium alloy to obtain a hydrogen-cracked platinum-iridium alloy layer.

[0047] ④Finally, the fine copper wire (conductive lead) is glued to the undeposited SnO on the Cu current collecto...

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Abstract

The invention relates to a Schottky diode hydrogen sensor core. The Schottky diode hydrogen sensor core is composed of a four-layer structure and conductive leads; the four-layer structure sequentially comprises a hydrogen cracking metal layer, a hydroxyl diffusion barrier layer, a semiconductor layer and a current collector layer, and the conductive leads are led out from the hydrogen cracking metal layer and the current collector layer respectively. The Schottky diode hydrogen sensor core disclosed by the invention has special performance of resisting humidity interference at room temperature, and the sensitivity of the Schottky diode hydrogen sensor core to hydrogen cannot be reduced by water vapor in a gas environment at room temperature; and the defect that the hydrogen sensitivity of an existing common hydrogen cracking metal layer / semiconductor layer Schottky diode hydrogen sensor core without a hydroxyl diffusion barrier layer is reduced at the room temperature is overcome.

Description

technical field [0001] The invention belongs to the technical field of hydrogen sensors, in particular to a Schottky diode hydrogen sensor core. Background technique [0002] As an efficient and clean fuel, hydrogen has the advantages of high energy storage density and no pollution. It is an ideal clean energy and has attracted widespread attention. As a reducing gas and carrier gas, hydrogen has been used in petrochemical, medical, electronics, aerospace rocket launch, petroleum refining, metal welding, cryogenic cooling and chemical synthesis and other fields. However, due to the small size of hydrogen molecules, it is very easy to leak during production, transportation and use. When the content of hydrogen in the air is between 4% and 74.4%, it will explode when it encounters an open flame. Therefore, rapid and effective leak detection during hydrogen storage and use is very important for the safe use of hydrogen, and it is of great significance to develop a reliable an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414
CPCG01N27/4141Y02E60/36
Inventor 方海涛李瑞武李思佳
Owner HARBIN INST OF TECH