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Nickel diselenide/indium zinc sulfide composite photocatalyst as well as preparation method and application thereof

A technology of composite light and catalyst, applied in the field of photocatalytic materials, can solve the problems of limited wide application and expensive precious metal, and achieve the effects of strong controllability, simple steps and high practical value

Inactive Publication Date: 2021-06-01
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, precious metals are expensive, which greatly limits their wide application

Method used

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  • Nickel diselenide/indium zinc sulfide composite photocatalyst as well as preparation method and application thereof
  • Nickel diselenide/indium zinc sulfide composite photocatalyst as well as preparation method and application thereof
  • Nickel diselenide/indium zinc sulfide composite photocatalyst as well as preparation method and application thereof

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preparation example Construction

[0028] The preparation steps of the present invention are as follows:

[0029] (1) Preparation of zero-dimensional NiSe by hydrothermal method 2 nanoparticles

[0030]0.228 g of selenium powder and 2.857 g of sodium hydroxide were dissolved in 25 mL of deionized water and stirred. The mixed solution was transferred to an autoclave and reacted at a constant temperature of 180 °C for 12 h. The resulting solution was NaHSe solution.

[0031] Dissolve nickel nitrate hexahydrate (0.1 mmol), sodium citrate (0.1 mmol), and cyclohexamethylenetetramine (0.25 mmol) in 40 mL of deionized water and stir for 30 min, then transfer the mixed solution to an autoclave React at a constant temperature of 120 °C for 12 h. After cooling, NaHSe solution was added to it, and the mixed solution was transferred to an autoclave to react at a constant temperature of 140 °C for 12 h, then cooled to room temperature naturally, and the obtained precipitate was washed with deionized water several times an...

Embodiment 1

[0036] (1) Preparation of zero-dimensional NiSe by hydrothermal method 2 nanoparticles

[0037] 0.228 g of selenium powder and 2.857 g of sodium hydroxide were dissolved in 25 mL of deionized water and stirred. The mixed solution was transferred to an autoclave and reacted at a constant temperature of 180 °C for 12 h. The resulting solution was NaHSe solution.

[0038] Dissolve nickel nitrate hexahydrate (0.1 mmol), sodium citrate (0.1 mmol), and cyclohexamethylenetetramine (0.25 mmol) in 40 mL of deionized water and stir for 30 min, then transfer the mixed solution to an autoclave React at a constant temperature of 120 °C for 12 h. After cooling, NaHSe solution was added to it, and the mixed solution was transferred to an autoclave to react at a constant temperature of 140 °C for 12 h, then cooled to room temperature naturally, and the obtained precipitate was washed with deionized water several times and then dried to obtain NiSe 2 powder.

[0039] (2) Preparation of 0D / 2...

Embodiment 2

[0042] (1) Preparation of zero-dimensional NiSe by hydrothermal method 2 nanoparticles

[0043] 0.228 g of selenium powder and 2.857 g of sodium hydroxide were dissolved in 25 mL of deionized water and stirred. The mixed solution was transferred to an autoclave and reacted at a constant temperature of 180 °C for 12 h. The resulting solution was NaHSe solution.

[0044] Dissolve nickel nitrate hexahydrate (0.1 mmol), sodium citrate (0.1 mmol), and cyclohexamethylenetetramine (0.25 mmol) in 40 mL of deionized water and stir for 30 min, then transfer the mixed solution to an autoclave React at a constant temperature of 120 °C for 12 h. After cooling, NaHSe solution was added to it, and the mixed solution was transferred to an autoclave to react at a constant temperature of 140 °C for 12 h, then cooled to room temperature naturally, and the obtained precipitate was washed with deionized water several times and then dried to obtain NiSe 2 powder.

[0045] (2) Preparation of 0D / 2...

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Abstract

The invention discloses a 0D / 2D NiSe2 / ZnIn2S4 composite photocatalyst, a preparation method thereof and application of the 0D / 2D NiSe2 / ZnIn2S4 composite photocatalyst in hydrogen production by visible light catalytic decomposition of water. The composite photocatalyst is formed by taking flower-shaped microspheres assembled by two-dimensional ZnIn2S4 nanosheets as a main body and uniformly loading zero-dimensional NiSe2 nanoparticles on the surface of the flower-shaped microspheres. According to the invention, tight interface contact between NiSe2 nanoparticles and ZnIn2S4 nanosheets is constructed, reaction sites are fully exposed, and effective separation of photo-induced electron-hole pairs is facilitated. And the NiSe2 nanoparticles have good conductivity and high work function characteristics, so that rapid transfer of charges is facilitated. Compared with pure ZnIn2S4, the photocatalytic activity of the composite photocatalyst prepared by the method under visible light is obviously improved, and the composite photocatalyst has good stability. The preparation method is simple, mild in condition, rich in raw material source, low in cost, environment-friendly and easy to popularize on a large scale.

Description

technical field [0001] The invention belongs to the technical field of photocatalytic materials, in particular to a 0D / 2D NiSe 2 / ZnIn 2 S 4 Composite photocatalyst and its preparation method and its application in visible light catalytic decomposition of water to produce hydrogen. Background technique [0002] The excessive use of fossil fuels has led to a large number of environmental pollution problems, and it is particularly important to find clean energy. Hydrogen energy, with its advantages of high energy density, eco-friendliness, and recyclability, is an important substitute for fossil fuels in the future. Therefore, the use of semiconductor photocatalytic technology to convert solar energy into hydrogen energy is of great significance for alleviating the current energy shortage and environmental pollution. [0003] Indium zinc sulfur is an important semiconductor photocatalytic material that can actively respond to visible light and has a tunable band structure ...

Claims

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Application Information

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IPC IPC(8): B01J27/057B01J35/02B01J35/08C01B3/04
CPCB01J27/0573C01B3/042C01B2203/0277C01B2203/1058C01B2203/1082B01J35/51B01J35/40B01J35/39Y02E60/36
Inventor 黄彩进赖利娟
Owner FUZHOU UNIV
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