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Ion-controlled spin-wave transistor and method of making the same

A technology of spin wave and transistor, which is applied in the field of ion-regulated spin wave transistor and its preparation, can solve problems such as low loss of spin wave, long-distance transmission, hindering application, etc., achieve low power consumption, realize The effect of electric field regulation and avoidance of Joule heating

Active Publication Date: 2022-07-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The magnetic thin film layer is usually made of hysteresis stretching material or piezoelectric material, which is difficult to achieve low loss and long-distance transmission of spin waves, which greatly hinders its application in future nano spin wave devices.

Method used

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  • Ion-controlled spin-wave transistor and method of making the same
  • Ion-controlled spin-wave transistor and method of making the same

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Embodiment 1

[0033] In this embodiment, an ion-regulated spin wave transistor includes a gadolinium gallium garnet (GGG) single crystal substrate, and a bottom electrode layer platinum (Pt) and a magnetic thin film yttrium iron garnet sequentially formed on the substrate Ionite (YIG), an ion layer-top electrode layer heterojunction formed on a magnetic thin film, and a microwave antenna located on both sides of the ion layer-top electrode layer heterojunction. Among them, the ion layer is made of nano-oxide hydrogen storage material tungsten trioxide (WO 3 ); the top electrode and microwave antenna are chromium / gold (Cr / Au).

[0034] The preparation method of the ion-controlled spin wave transistor of the present embodiment is as follows:

[0035] Step 1. Soak the gadolinium gallium garnet (GGG) single crystal substrate in a mixed solution of hydrogen peroxide and concentrated sulfuric acid with a volume ratio of 1:1 for 15 minutes, and then use acetone, alcohol and deionized water for ul...

Embodiment 2

[0046] In this embodiment, an ion-regulated spin wave transistor includes a gadolinium gallium garnet (GGG) single crystal substrate, and a bottom electrode layer platinum (Pt) and a magnetic thin film doped with bismuth sequentially formed on the substrate of thulium iron garnet (TmBiIG), an ion layer-top electrode layer heterojunction formed on a magnetic thin film, and a microwave antenna located on both sides of the ion layer-top electrode layer heterojunction. Among them, the ion layer is lithium ion oxide LiCoO 2 ; The top electrode and microwave antenna are chromium / gold (Cr / Au).

[0047] Step 1. Soak the gadolinium gallium garnet (GGG) single crystal substrate in a mixed solution of hydrogen peroxide and concentrated sulfuric acid with a volume ratio of 1:1 for 15 minutes, and then use acetone, alcohol and deionized water for ultrasonic cleaning in sequence Substrate, ultrasonic time is 10 minutes;

[0048] Step 2, using a DC magnetron sputtering method to grow a 20n...

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Abstract

An ion-regulated spin wave transistor and a preparation method thereof belong to the technical field of spin wave devices. The ion-regulated spin wave transistor includes a substrate substrate, a bottom electrode layer formed on the substrate substrate, a magnetic film formed on the bottom electrode layer, and an ion layer-top formed on the magnetic film. Electrode layer heterojunction, and microwave antennas located on both sides of the ion layer-top electrode layer heterojunction. In the ion control type spin wave transistor of the present invention, the magnetic atoms in the magnetic film and the ions stored in the ion layer undergo a redox reaction under the action of an electric field, so that the magnetic properties of the magnetic film are changed, thereby realizing the transmission amplitude of the spin wave. The electric field regulation of and phase has the technical advantages of low power consumption and long-distance transmission.

Description

technical field [0001] The invention belongs to the technical field of spin wave devices, in particular to an ion-regulated spin wave transistor and a preparation method thereof. Background technique [0002] With the continuous progress of science and technology and the rapid development of electronic information technology, miniaturization has become the main development trend of electronic devices, and the number of transistors integrated on the chip is also increasing. Since the transmission and processing of information in traditional electronic devices is accomplished by manipulating electrons, the Joule heat generated by the movement of electrons limits the development of electronic devices towards miniaturization and low power consumption. [0003] Spin waves are the collective propagation process of electron spin precession in magnetically ordered materials. Since spin waves can propagate in various media without heat dissipation, low damping, and long distances in ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/66H01L21/34
CPCH01L29/66984H01L29/66969
Inventor 金立川刘帅张怀武钟智勇徐嘉鹏张磊
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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