Large-size low-stress single crystal nitride thick film structure and preparation method thereof
A nitride, low-stress technology, applied in semiconductor/solid-state device manufacturing, electrical components, impedance networks, etc., can solve problems such as curling, cracks, and high stress in single-crystal nitride thick films, reducing stress accumulation and yield. High and reduced stress moment effect
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[0034] like figure 2 As shown, a method for preparing a large-scale low-stress single crystal nitride thick film structure includes the following steps:
[0035] 1) Take a substrate as the substrate 1 for epitaxial layer growth, clean and dry the substrate 1, and then photolithographically pattern the channel to be etched;
[0036] 2) Lay a mask layer 2 on the substrate 1 patterned by photolithography to expose the channel to be etched, and then use dry method or / and wet method to etch to obtain the channel 3, and the etching time depends on the etching time Depth to determine;
[0037] 3) Remove the mask layer 2 on the substrate 1, dry it, and then put the substrate 1 into a coating device to grow a single crystal nitride thick film 4, so as to obtain the large-size low-stress single crystal nitride thick film. Membrane structure.
[0038] Wherein, the material of the mask layer 2 may be any one of photoresist, silicon oxide, and silicon nitride. The dry etching during e...
Embodiment 1
[0041] A large-scale low-stress single crystal aluminum nitride thick film structure prepared by the following method:
[0042] 1) Take a 12-inch silicon substrate as the substrate 1 for epitaxial growth, perform standard semiconductor cleaning and drying on the silicon wafer, and then photolithographically pattern the channel to be etched;
[0043] 2) According to the channel to be etched patterned by photolithography on the silicon substrate, the silicon substrate is subjected to HMDS adhesion-increasing treatment, and then steps such as spinning glue, photolithography, development, and inspection are performed in sequence to complete the photoresist mask Preparation of layer 2, exposing the channel to be etched, leaving the width of channel 3 at 3 μm;
[0044] 3) Put the 12-inch silicon substrate with the photoresist mask layer 2 into an ICP etching machine for dry etching, etch the trench 3 to a depth of 3 μm, and place the photoresist mask The mold layer 2 is removed, cl...
Embodiment 2
[0048] A large-scale low-stress single-crystal gallium nitride thick-film structure is prepared by the following method:
[0049] 1) Take a 12-inch sapphire substrate as the substrate 1 for epitaxial growth, perform standard semiconductor cleaning and drying on the sapphire, and then photolithographically pattern the channel to be etched;
[0050] 2) According to the channel to be etched patterned by photolithography on the sapphire substrate, the sapphire substrate is subjected to HMDS adhesion-increasing treatment, and then the steps of spinning glue, photolithography, development, and inspection are sequentially performed to complete the photoresist mask Preparation of layer 2, exposing the channel to be etched, leaving the width of channel 3 at 5 μm;
[0051] 3) Put the 12-inch silicon substrate with the photoresist mask layer 2 into the RIE etching machine for dry etching, etch the trench 3 to a depth of 5 μm, and place the photoresist mask The mold layer 2 is removed, c...
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