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Radiation preparation method of silicon carbide quantum dots and product thereof

A silicon carbide and quantum dot technology, applied in the field of nanomaterials, can solve problems such as danger, high energy consumption, pollution, etc., and achieve the effects of reducing raw material costs, energy consumption, and environmental pollution.

Active Publication Date: 2021-07-20
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The method has advantages and disadvantages when preparing silicon carbide nanocrystals
However, the synthesis process inevitably involves high temperature (>1500 degrees Celsius), metal reducing agents (Na, Mg), strong acids and compounds (HNO 3 and HF), etc., the potential hazards such as high energy consumption, danger and pollution in the synthesis process must be

Method used

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  • Radiation preparation method of silicon carbide quantum dots and product thereof
  • Radiation preparation method of silicon carbide quantum dots and product thereof
  • Radiation preparation method of silicon carbide quantum dots and product thereof

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preparation example Construction

[0024]Generally speaking, the radiation preparation method of silicon carbide quantum dots of the present invention may include the following steps:

[0025] S1: Mix the silane coupling agent and the ionic liquid uniformly at a mass ratio of 0.01-5:1 to obtain a mixed solution for use.

[0026] S2: Take the above mixed solution to prepare an ionic liquid-in-water microemulsion, so that the microemulsion components include the following components by weight: 70-80 parts by weight of water, 20-30 parts by weight of surfactant , and 0-10 parts by weight of the ionic liquid. The obtained microemulsion was magnetically stirred at room temperature until uniform and transparent. Then, it can be divided into 10×15cm PE bags for later use.

[0027] S3: Under normal temperature and pressure, electron beams or gamma rays are used to irradiate the microemulsion prepared in S2 with 10 kGy-200 kGy to prepare silicon carbide quantum dots in situ.

[0028] S4: Finally, use a mixture of ace...

Embodiment 1

[0031] (1) The total mass of the prepared microemulsion system is 100 g, and the mass ratio of the immobilized coupling agent to 1-butyl-3-methylimidazolium hexafluorophosphate is about 0.2. Add 0.3764g of silane coupling agent to 1.8189g of 1-butyl-3-methylimidazolium hexafluorophosphate, then add 18.1899g of Triton-100 (ie, TX-100), 80.02g of H 2 O mixed and stirred for 1h. Pack each 20g into a PE bag.

[0032] (2) Using an electron accelerator above 0.4 MeV or cobalt-60 as a radiation source to irradiate with a dose of 10kGy-200kGy to prepare silicon carbide quantum dots in situ. Take 3 samples obtained in step (1), and treat them with irradiation doses of 50kGy, 80kGy, and 100kGy respectively.

[0033] (3) After the irradiation is completed, purification and separation are carried out according to the treatment method of step S4 above. The obtained silicon carbide quantum dot is about 1nm, has a stable, blue fluorescent silicon carbide quantum dot ( figure 1 ).

[003...

Embodiment 2

[0038] (1) The total mass of the prepared microemulsion system is about 60 g, and the mass ratio of the immobilized coupling agent to the ionic liquid is about 0.5. Add 0.5396g silane coupling agent to 1.1002g 1-butyl-3-methylimidazolium hexafluorophosphate, with 10.9068g TX-100, 48.0038g H 2 O mixed and stirred for 1h. Pack each 20g into a PE bag.

[0039] (2) Using an electron accelerator above 0.4 MeV or cobalt-60 as a radiation source to irradiate with a dose of 10kGy-200kGy to prepare silicon carbide quantum dots in situ. Specifically, an irradiation dose of 80kGy is used for treatment.

[0040] (3) After the irradiation is completed, purification and separation are carried out according to the treatment method of step S4 above. The obtained silicon carbide quantum dots are about 1nm in size, have stable and blue fluorescent emission silicon carbide quantum dots.

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Abstract

The invention belongs to the technical field of nano materials, and discloses a radiation preparation method of silicon carbide quantum dots and a product thereof, and the preparation method comprises the following steps: uniformly mixing a silane coupling agent and an ionic liquid to obtain a mixed solution, then preparing an ionic liquid-in-water type ionic liquid microemulsion, wherein the microemulsion comprises the following components in parts by weight: 70-80 parts of water, 20-30 parts of a surfactant and no more than 10 parts of ionic liquid, then, applying irradiation of 10 kGy to 200 kGy to the microemulsion by utilizing an ionizing radiation technology to obtain silicon carbide quantum dots through in-situ preparation; and finally, demulsifying, separating, washing and drying to obtain the silicon carbide quantum dots. According to the invention, the whole process design of the preparation method, the components of the key ionic liquid in water type ionic liquid microemulsion and the like are improved, so that the preparation method is simple in process, low in energy consumption, economical, environment-friendly and capable of realizing large-scale production.

Description

technical field [0001] The invention belongs to the technical field of nanomaterials, and more specifically relates to a method for preparing silicon carbide quantum dots by radiation and products thereof. Background technique [0002] Silicon carbide quantum dots are a very important semiconductor material, which has the advantages of room temperature fluorescence, high luminescence stability, non-toxicity and high biocompatibility. Therefore, SiC quantum dots have been widely studied and applied in the fields of in vivo biological imaging, drug carrier, deformity correction and dental implantation. At present, the synthesis methods of silicon carbide nanocrystals mainly include chemical deposition, electrochemical etching, carbothermal reduction of organosilanes, laser pyrolysis and ablation, and ball milling. Each of the methods has advantages and disadvantages when preparing silicon carbide nanocrystals. However, the synthesis process inevitably involves high temperatu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/977C09K11/65B82Y30/00B82Y20/00
CPCC01B32/977C09K11/65B82Y30/00B82Y20/00C01P2004/64
Inventor 齐伟赵龙
Owner HUAZHONG UNIV OF SCI & TECH
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