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Rare earth precursor, manufacturing method therefor, and method for forming thin film by using same

A thin film, rare earth element technology, applied in the field of vapor deposition compounds, can solve the problems of thermal stability, low deposition rate, difficult to remove, etc., and achieve excellent film characteristics, uniform film deposition, and the effect of preventing side reactions.

Active Publication Date: 2021-07-30
HANSOL CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This by-product is known to be difficult to remove
[0013] That said, conventional rare earth precursors have disadvantages in that these precursors are not thermally stable at high temperatures and thus have low deposition rates in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes

Method used

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  • Rare earth precursor, manufacturing method therefor, and method for forming thin film by using same
  • Rare earth precursor, manufacturing method therefor, and method for forming thin film by using same
  • Rare earth precursor, manufacturing method therefor, and method for forming thin film by using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] In order to carry out the chemical reaction represented by the following chemical formula 2, YCl 3 (1 eq.) was added to the flask and dissolved in organic solvent. Then, cyclopentadienyl (Cp) derivative ligand (1 equivalent) and triethylamine (TEA) (2 equivalents) were added thereto and stirred.

[0065] Then, a Li-substituted alkoxyamine-based ligand (1 equiv) was added to the mixture and stirred overnight.

[0066] After completion of the reaction, the resulting mixture was filtered under reduced pressure to remove the solvent and then purified by distillation or sublimation to obtain the final compound of pure yttrium (Y) vapor deposition precursor.

[0067] [Chemical Reaction Formula 2]

[0068]

Embodiment 2

[0070] Use LaCl 3 Instead of YCl in Example 1 3 The final compound of the lanthanum (La) vapor deposition precursor is obtained.

preparation Embodiment 1

[0072] By alternately applying the novel rare earth precursor synthesized in Example 1 of the present invention and the reactant O 3 , to deposit rare earth thin films on the substrate. The substrate used in this experiment was a p-type Si wafer, and its resistance was 0.02 Ω·cm. Prior to deposition, p-type Si wafers were cleaned by sonicating in each of acetone, ethanol and deionized water (DI water) for 10 minutes. The native oxide film formed on the Si wafer was immersed in 10% HF solution (HF:H 2 O=1:9) for 10 seconds and then removed. The substrate is kept ready by being held at a temperature of 150°C to 450°C. The novel solid rare earth precursor synthesized in Example 1 was evaporated in a bubbler maintained at a temperature of 90°C to 150°C.

[0073] Argon (Ar) is supplied as a purge gas to purge the remaining precursor and reaction gases in the deposition chamber. The flow rate of argon was set at 1000 sccm. The concentration is 224g / cm 3 Ozone (O 3 ) is used ...

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Abstract

The present invention relates to a compound capable of thin film deposition through vapor deposition and, specifically, to a rare earth compound, which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and has excellent thermal stability and reactivity, a rare earth precursor comprising same, a manufacturing method therefor, and a method for forming a thin film by using same.

Description

technical field [0001] The present invention relates to a vapor deposition compound which can be used for thin film deposition using vapor deposition. In particular, the present invention relates to a rare earth compound capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having excellent volatility and thermal stability and low melting point, a method of manufacturing the same, and forming a thin film using the same Methods. Background technique [0002] In recent decades, silicon dioxide (SiO 2 ) has become a reliable dielectric. However, as semiconductor devices become more densely packed and their channel paths become thinner, silicon dioxide is replaced by "metal gate / high-k" transistors and SiO-based 2 The reliability of the gate dielectric reaches its physical limit. In particular, there is a need to develop a new gate dielectric material for dynamic random access memory (DRAM) memory devices and capacitors. [0003] A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F5/00C23C16/40C23C16/455
CPCC07F5/00C07F7/10C23C16/405C23C16/45553C23C16/18C07F5/003
Inventor 金孝淑昔壮衒朴正佑曹银晶
Owner HANSOL CHEM
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