Silicon quantum dot ink and preparation method thereof
A silicon quantum dot and ink technology, applied in the field of silicon quantum dot ink and its preparation, can solve the problems of unsatisfactory printing film quality, unstable quantum dot ink dispersion system, unsatisfactory rheological properties, etc., and achieve good contact, Prevention of secondary agglomeration and small particle size effect
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[0085] Correspondingly, the embodiment of the present invention also provides the preparation method of the above silicon quantum dot ink. The technological process of the preparation method of described silicon quantum dot ink is as Figure 9 shown, including the following steps:
[0086] S01. Measure each component: measure each component according to the components and content contained in the silicon quantum dot ink;
[0087] S02. pre-mixing the measured components: pre-mixing the measured components to prepare a mixed slurry;
[0088] S03. Thinning treatment of silicon quantum dot ink: performing thinning treatment on the mixed slurry.
[0089] Wherein, the silicon quantum dot ink in the step S01 is the silicon quantum dot ink described above, therefore, the components and contents contained in the silicon quantum dot ink in the step S01 are all silicon quantum dot inks described above. The components and contents of the quantum dot ink are not repeated here in order t...
Embodiment 11
[0125] Embodiment 11 provides silicon quantum dots with a composite structure and a preparation method thereof. The structure of the composite structure silicon quantum dot is as figure 1 As shown, it is prepared according to the method comprising the following steps:
[0126] S11: transport the white quartz sand powder with a particle size of 1 μm and a purity of 5N to the plasma chamber through an argon gas delivery flow; wherein, the argon delivery flow contains hydrogen reducing gas;
[0127] S12: After the plasma treatment, cool argon gas into the environment of the plasma chamber for cooling, and collect silicon quantum dots with composite structure, fine powder, brown color, about 150g / hr.
[0128] Wherein, the corresponding conditions in step S11 and step S12 are as follows:
[0129] The raw material is white quartz sand with a particle size of 1 μm;
[0130] The powder feeding speed is 300g / hr., the argon synthesis gas used for powder feeding contains 2% hydrogen, ...
Embodiment 12
[0139] Embodiment 12 provides silicon quantum dots with a composite structure and a preparation method thereof. The structure of the composite structure silicon quantum dot is as figure 1 As shown, it is prepared according to the method comprising the following steps:
[0140] S11: transporting the silicon oxide powder with a particle size of 9 μm and a purity of 4N to the plasma chamber through an argon delivery airflow for plasma treatment; wherein, the argon delivery airflow contains a hydrogen reducing gas;
[0141] S12: After the plasma treatment, pass cooling argon gas into the environment in the plasma chamber for cooling, and collect silicon quantum dots with composite structure;
[0142] S13: Put the composite structure silicon quantum dots collected in step S12 in a quartz crucible, and transfer the crucible to a quartz tube furnace; set the argon gas flow rate to 10 SLPM, and turn on the nitrogen gas flow meter; flush the furnace chamber with nitrogen gas for 10 mi...
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