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A new type of copper alloy manufacturing process for water-cooled exchangers based on monocrystalline silicon smelting

A manufacturing process and exchanger technology, applied in the field of new copper alloy manufacturing process, can solve the problems of low stainless steel material recovery rate, poor thermal conductivity and heat dissipation performance, and poor corrosion resistance, so as to improve heat dissipation efficiency and condensation efficiency, and reduce consumables. cost and productivity

Active Publication Date: 2022-01-28
SHAANXI SIRUI ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Most of the existing water-cooled exchangers are made by welding 301-316 series stainless steel plate cut reels. The weld seam is too dense, and the overall structure is easily corroded and damaged from the weld seam position. Although the stainless steel plate itself can resist corrosion, it is used for welding. The weld position after soldering has poor corrosion resistance under high temperature and water pressure environment, which is easy to cause failure; and the temperature of monocrystalline silicon at the solid-liquid interface is as high as 1400K, while the thermal conductivity and heat dissipation of 301-316 series stainless steel materials are not good, about 12W / mK, so low speed must be used to increase the liquid-solid forming rate, which seriously affects production efficiency; in terms of material cost, although copper is more expensive than stainless steel, the recovery rate of stainless steel is low in terms of material damage, and the overall cost is high.

Method used

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  • A new type of copper alloy manufacturing process for water-cooled exchangers based on monocrystalline silicon smelting
  • A new type of copper alloy manufacturing process for water-cooled exchangers based on monocrystalline silicon smelting
  • A new type of copper alloy manufacturing process for water-cooled exchangers based on monocrystalline silicon smelting

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Embodiment 1

[0033] A novel copper alloy manufacturing process for water-cooled exchangers based on monocrystalline silicon smelting, comprising the following steps:

[0034] S1 Material preparation: Prepare 500Kg of charge for smelting for use. The composition and mass content of each element in the charge are: Cr 25%, Zr 3%, Si 1%, Mg 1%, rare earth 1%, graphene supported Ce powder 1%, Cu 69%, wherein, Cr and Zr are added in the form of intermediate alloy copper plates; the preparation method of graphene-supported Ce powder is: take graphene oxide and CeCl 3 ·H 2 After the O mass ratio is 3:1, after mixing evenly, join in the water-bath crucible and heat in a water bath at 150°C for 20h, after washing, freeze-dry at -20°C for 10h to obtain graphene-loaded Ce powder;

[0035]S2 Furnace melting: Add 25Kg glass and 5Kg flux to the bottom of the furnace. If it cannot be covered or the glass is too thick, you can add or remove excess glass according to the actual situation. The solvents are ...

Embodiment 2

[0042] This embodiment is basically the same as Example 1, except that the stirring method in step S5 is the bottom blowing top magnetic stirring method, the bottom blowing top magnetic stirring method stirs argon gas at the bottom of the furnace, and electromagnetic stirring is used at the top to stir The melt was mixed and stirred, the stirring speed was 200r / min, and the argon pressure was kept at 5Pa.

Embodiment 3

[0044] This embodiment is basically the same as Embodiment 1, the difference is that:

[0045] The cold forging treatment method in step S7 is the ultrasonic cold forging nitriding method, and the ultrasonic cold forging nitriding method includes the following steps:

[0046] S1 Ultrasonic pretreatment: Ultrasonic vibration with a frequency of 30 Hz and an amplitude of 20 μm acts on the inner wall of the water-cooled heat exchanger through the punch, causing severe plastic deformation of the inner wall to achieve surface nanometerization, the diameter of the punch is 0.2 mm, and the number of impacts is 19820 times / mm 2 ;

[0047] S2 cold forging treatment: the process parameters of cold forging are: the forging speed is 6mm / s, the swivel angle is 45°, the cold forging thickness deviation is 0.1mm, and the temperature is 25°C;

[0048] S3 ion nitriding treatment: Put the water-cooled heat exchanger after cold forging into the nitriding furnace, evacuate to 4Pa, and after de...

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Abstract

The invention discloses a novel copper alloy manufacturing process for water-cooled exchangers based on single crystal silicon smelting, which includes the following steps: S1 material preparation: the composition and mass content of each element in the charge are: Cr 25%, Zr 3-15%, Si 1-3%, Mg 1-2%, rare earth 1-8%, graphene-loaded Ce powder 1-5%, Cu balance, Cr and Zr are added in the form of intermediate alloy copper plates; S2 furnace melting: guarantee furnace There are continuous melting layer, heating layer and preheating layer in the cavity; S3 heating and feeding: adding Si, Mg, rare earth and graphene-loaded Ce powder in sequence, keeping warm until the melt melts; S4 degassing detection; S5 adding Cr melting; S6 is deoxidized and released; S7 is post-processed. The copper alloy manufacturing process of the present invention uses chromium-zirconium copper as the base material and adds some rare earth elements, so that the copper alloy has higher heat resistance and strength while having good thermal conductivity, and at the same time improves the copper alloy. Excellent corrosion resistance, thus greatly improving the service life of the water-cooled exchanger.

Description

technical field [0001] The invention relates to the technical field of manufacturing water-cooled exchangers for single-crystal silicon smelting furnaces, in particular to a manufacturing process for a new type of copper alloy for water-cooled exchangers based on single-crystal silicon smelting. Background technique [0002] The monocrystalline silicon smelting furnace is a manufacturing equipment for producing monocrystalline silicon through the Czochralski method. It is mainly composed of three parts: the main engine, the heating power supply and the computer control system. In the process of smelting and growing silicon single crystal, the success of silicon single crystal growth and the quality are determined by the temperature distribution of the thermal field. A thermal field with a suitable temperature distribution not only grows silicon single crystal smoothly, but also has high quality ; If the temperature distribution of the thermal field is not very reasonable, va...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C9/00C22C30/02C22C1/10C22C1/06C23C8/36C22F1/08
CPCC22C9/00C22C30/02C22C1/1036C22C1/06C23C8/36C22F1/08
Inventor 张琦张航庾高峰李雷马明月吴斌王聪利靖林
Owner SHAANXI SIRUI ADVANCED MATERIALS CO LTD