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Method for preparing two-dimensional transverse heterojunction on transition metal chalcogenide matrix based on selective reaction

A technology of chalcogen compounds and transition metals, applied in metal material coating technology, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as not suitable for large-scale growth and low efficiency

Pending Publication Date: 2021-08-31
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods cannot ensure that the patterns can be artificially designed without introducing pollution during the synthesis process.
In addition, the existing laser-assisted in-situ growth method is not suitable for large-scale growth because it takes a certain amount of time for each point to crystallize under laser irradiation.

Method used

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  • Method for preparing two-dimensional transverse heterojunction on transition metal chalcogenide matrix based on selective reaction
  • Method for preparing two-dimensional transverse heterojunction on transition metal chalcogenide matrix based on selective reaction
  • Method for preparing two-dimensional transverse heterojunction on transition metal chalcogenide matrix based on selective reaction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Fabrication of transition metal chalcogenide thin films on substrates:

[0058] a1) SiO 2 -Si substrate is used as the substrate, and the thickness of silicon oxide is 300nm. The substrate is placed in deionized water, acetone and isopropanol for ultrasonic cleaning, and then dried with nitrogen; 3 In a double-ended open quartz boat, placed in the tube furnace reaction chamber;

[0059] b1) placing a quartz boat equipped with sulfur powder in the heating zone upstream of the air flow at the base;

[0060] c1) After scrubbing with argon gas in the tube furnace, feed 5 sccm of argon gas, and after the gas flow is stable, the sulfur powder and MoO 3 Heating to temperatures of 130-140°C and 645-655°C respectively, and keeping the temperature constant for 5-10 minutes, to obtain a single layer of MoS grown on the substrate 2 Thin film, the film thickness is 0.7nm.

Embodiment 2

[0062] attached figure 1 a-1c shows a schematic diagram of the preparation process of the heterojunction, which is synthesized and prepared according to the process shown in the figure.

[0063] Preparation of MoS 2 -MoSe 2 The specific steps of heterojunction are as follows:

[0064] 1) Laser direct writing process:

[0065] Use the required graphics with the software for laser direct writing equipment, use the TANGO translation stage and control software, and use the single-layer MoS grown on the substrate of Example 1 2 The thin film is placed at the starting point of the scanned image, and a laser with a wavelength of 532nm is used to follow the specified path of the required pattern at a rate of 20.4kW / mm 2 power and rate of 10 μm / s in monolayer MoS 2 The surface of the film is irradiated and scanned, and ultra-thin, highly reactive, and patterned MoO is obtained after scanning x Oxidized regions, oxidized regions (TMO) and non-oxidized regions (TMD) together form M...

Embodiment 3

[0075] Unlike ordinary CVD growth methods, which can only grow on the active sites on the edge or face, since the growth precursor here is the TMO region that has been laser patterned, this region is only atomically thick and because it is rich in Due to the high reactivity due to defects, the reduction reaction can occur at a growth temperature that is about 50-200 ° C lower than that of conventional methods. At this time, the TMD region (non-oxidation region) can remain intact because it does not reach the reaction temperature of the conventional synthesis method using powder oxide as a precursor. Therefore, this reaction process is highly selective, and the reaction only occurs in the TMO region.

[0076] The invention overcomes the complex graphics and graphics with radians that cannot be realized by the traditional CVD growth method, Figure 7 , Figure 8 , Figure 9 and Figure 10 Heterojunction materials with different patterns prepared by this method are shown, inc...

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Abstract

The invention discloses a method for preparing a two-dimensional transverse heterojunction on a transition metal chalcogenide matrix based on selective reaction, and belongs to the technical field of nano material preparation. The method comprises the following specific steps: irradiating a transition metal chalcogenide film by laser direct writing, oxidizing a transition metal chalcogenide film material, and forming a non-oxidation region-oxidation region heterojunction by an oxidation region and a non-oxidation region; and then carrying out global heating on the sample through a vapor deposition method, forming a third phase zone due to the fact that an oxidation zone is rich in defects and has reaction activity and the reaction process selectively occurs in the oxidation zone, keeping a non-oxidation zone unchanged, and obtaining the non-oxidation zone-third phase zone two-dimensional transverse heterojunction. The oxidized material obtained through laser irradiation is rich in defects and has high activity and selectivity, so that in the vapor deposition process, a growth reaction only selectively occurs in an oxidized region, a non-oxidized region which is not irradiated by laser is kept unchanged, and a TMD-TMD' two-dimensional transverse heterojunction is formed.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a method for preparing a two-dimensional lateral heterojunction on a transition metal chalcogen compound substrate based on a selective reaction. Background technique [0002] Transition metal chalcogenides (TMDs) have attracted much attention due to their unique mechanical, optical, and electrical properties. Two-dimensional (2D) TMD heterostructures are essential components in emerging 2D electronic devices. In recent years, these heterostructures have been realized by various methods, including van der Waals stacking, epitaxial growth, and laser-assisted growth. However, these methods cannot ensure that the patterns can be artificially designed without introducing pollution during the synthesis process. In addition, the existing laser-assisted in-situ growth method is not suitable for large-scale growth because it takes a certain time for each po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/34H01L21/428H01L29/06H01L29/24H01L29/78C23C16/02C23C16/30
CPCC23C16/02C23C16/305H01L21/02568H01L21/0262H01L21/02658H01L21/34H01L21/428H01L29/0688H01L29/24H01L29/78
Inventor 王学雯刘锴
Owner TSINGHUA UNIV
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