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Diamond microchannel heat sink, preparation method, application and semiconductor laser

A micro-channel, diamond technology, applied in semiconductor lasers, lasers, laser parts and other directions, to achieve the effect of improving heat dissipation performance, improving service life, and avoiding surface carbonization

Active Publication Date: 2021-09-03
RES INST OF PHYSICAL & CHEM ENG OF NUCLEAR IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, diamond has extremely high hardness and corrosion resistance, which is difficult to process into microchannel structures by mechanical or chemical processes

Method used

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  • Diamond microchannel heat sink, preparation method, application and semiconductor laser
  • Diamond microchannel heat sink, preparation method, application and semiconductor laser
  • Diamond microchannel heat sink, preparation method, application and semiconductor laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Diamond microchannel heat sink preparation method, including the following steps:

[0050] Step, a polishing Si sheet 1 having a thickness of 2 mm is selected as a substrate, and the Si sheet 1 is cut into 10.8 × 5 mm according to the requirements of the semiconductor laser package process. 2 It is sequentially placed in deionized water, acetone, ethanol, and ionized water for ultrasonic oscillation, and then blows with flowing nitrogen.

[0051] Step 2, Wash the step 1 as a substrate deposition diamond film (DLC) 3, the stainless steel mask plate 2 with the microchannel grating is covered with the surface of the Si sheet, such as figure 1 Indicated. Deposition of diamond film 3 by magnetic excitation radio frequency plasma enhancement vapor deposition (M-RF-PECVD) equipment, such as figure 2 Indicated. Put the Si on the film 1 into the deposition chamber, this bottom is vacuumped to 0.01Pa, access Ar and CH 4 CH 4 The concentration is 20%, the deposition temperature is nor...

Embodiment 2

[0059] A diamond microchannels obtained by the preparation method of Example 1 were heat sink, and the size of the diamond microchannel was 10.8 × 5 mm. 2 .

[0060] The thermal conductivity of the diamond microchannel heat dissipation is measured by the photothermal deflection film thermal conductivity test system, and the phase of the light deflection is detected. The distance R of the left heat source is linear, such as Figure 9 Indicated.

[0061] The calculation formula of the heat transfer coefficient is:

[0062]

[0063] in, That is, the slope of the pattern, Ω is the modulation frequency of detecting light, and the heat conductivity of the heat conduction coefficient α can be obtained, so that the thermal conductivity K is:

[0064] K = ρ · c ρ · Α (2)

[0065] Where ρ is the density of the object, C ρ For its specific heat capacity. After calculation, the thermal conductivity is 1922WM -1 K -1 .

Embodiment 3

[0067] A semiconductor laser, the chip of the semiconductor laser is welded to the diamond microchannel heat sink, which improves the heat dissipation efficiency of its chip, and improves the stability of the semiconductor laser operation.

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Abstract

The invention discloses a diamond microchannel heat sink, a preparation method, application and a semiconductor laser. The preparation method of the diamond microchannel heat sink comprises the following steps that 1, a polished Si wafer is cleaned and dried; 2, the Si wafer is covered with a mask plate with a micro-channel gate hole, a diamond-like film is deposited in the micro-channel gate hole through M-RF-PECVD equipment, and the mask plate is taken down to obtain a DLC / Si wafer; 3, the DLC / Si wafer is etched by wet etching to form a micro-channel groove on the surface of the DLC / Si wafer; 4, plasma etching treatment is carried out to remove a DLC film layer and an oxide layer on the surface of the Si wafer; 5, a diamond thick film is prepared through an EACVD method to obtain a Si / diamond thick film; 6, the diamond thick film is polished; and 7, the Si wafer serving as a substrate is removed by wet etching, and cleaned and dried to obtain the diamond micro-channel heat sink. According to the diamond micro-channel heat sink, the specific surface area of the diamond micro-channel heat sink making contact with a cooling liquid can be increased, and the heat dissipation performance of the semiconductor laser can be effectively improved.

Description

Technical field [0001] The present invention relates to the technical findings of a semiconductor laser heat sink preparation process, and more particularly to a preparation method of a semiconductor laser microchannel heat sink. Background technique [0002] As the semiconductor laser manufacturing process is getting more mature, it has been widely used in the fields of pump solid lasers, industrial processing, medical beauty and military science and technology. In particular, it is of great significance for the use of large power and small volume of the semiconductor laser, especially for the improvement of the solid laser pump module. However, the electro-optical conversion efficiency of the semiconductor laser is about 50% to 60%, for the linear array of the cavity length 1 mm, 19 die, and the heat power is also equal to the output 40W light power, resulting in a small area in which the active region is small. Generate great thermal flux, especially in the mode of continuous ...

Claims

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Application Information

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IPC IPC(8): C23C16/26C23C16/04C23C16/505C23C16/56C23C16/27C23C16/01C23C16/02H01S5/024
CPCC23C16/26C23C16/042C23C16/505C23C16/56C23C16/27C23C16/01C23C16/0245H01S5/02469H01S5/02484H01S5/02461H01S5/02423Y02P20/10
Inventor 戴玮曹剑徐晓明张金玉王雪梅李嘉强
Owner RES INST OF PHYSICAL & CHEM ENG OF NUCLEAR IND
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