Etching solution for removing etching residues of ceramic substrate and etching method

A technology for ceramic substrate and etching solution, which is applied in the field of etching solution for removing etching residues of ceramic substrates, can solve the problems of poor copper surface condition, poor stability, incomplete etching, etc., and achieves good copper surface condition and good electrical properties. , the effect of etching thoroughly

Pending Publication Date: 2021-10-08
绍兴德汇半导体材料有限公司 +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the deficiencies in the prior art, the present invention provides an etching solution and an etching method for removing etching residues on a ceramic substrate, which solves the problem of the relatively common etching method for solder in the industry. Acidity is corrosive to

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching solution for removing etching residues of ceramic substrate and etching method
  • Etching solution for removing etching residues of ceramic substrate and etching method
  • Etching solution for removing etching residues of ceramic substrate and etching method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0029] Example 1

[0030] see Figure 1-2 , the present invention provides the following technical solutions: a ceramic substrate etching residue removal etching solution, the etching solution includes etching solution A and etching solution B, etching solution A and etching solution B include hydrogen peroxide, ammonia, sulfuric acid, structural The etchant contains one or more compositions of hydroxyl group, carboxyl group and its salts, organic amine and surfactant, and the etching solution is used to remove the solder residue and the bonding layer of the copper-clad ceramic substrate after copper etching.

[0031] Specifically, the structure in the etching solution A contains carboxyl groups and their salts are polyaspartic acid, glycine, glutamic acid, aspartic acid, EDTA, alanine, threonine, cysteine, sperm One or more compositions containing other functional group substances such as amino acid, tyrosine, DTPA, HEDTA, maleic acid-acrylic acid copolymer, sodium polyacryl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of production of power semiconductors, and particularly relates to an etching solution for removing etching residues of a ceramic substrate and an etching method. The etching solution comprises an etching solution A and an etching solution B; and the etching liquid A and the etching liquid B comprise hydrogen peroxide, ammonia water, sulfuric acid, and a composition structurally containing one or more of hydroxyl, carboxyl and salts thereof, organic amine and a surfactant, and the etching liquid is used for removing solder residues and a joint layer of the copper-clad ceramic substrate after copper etching. According to the etching solution, a traditional nitric acid system and a traditional cyanide complex double salt system are abandoned, the etching solution does not contain cyanide and phosphorus, residual etching welding flux after copper etching can be effectively removed, the prepared copper-clad ceramic substrate has the advantage of being long in service life, corrosion to copper is small during etching, etching is thorough, and the copper surface state is good.

Description

technical field [0001] The invention relates to the technical field of power semiconductor production, in particular to an etching solution and an etching method for removing etching residues on a ceramic substrate. Background technique [0002] High-power semiconductor modules are widely used in electric locomotives, electric vehicles, photovoltaic solar energy and other fields. As high-power modules become more integrated and use more power, the heat generated by semiconductor devices is on the rise. At present, the method of sintering metals with excellent electrical and thermal conductivity and ceramics such as nitrides with good insulating properties to form ceramic circuit boards has been widely used in power semiconductors to solve the heat dissipation problem of power semiconductor devices. [0003] At present, there are mainly two methods for joining ceramics and metals, direct joining and active brazing. The direct bonding method refers to a method of directly bo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23F1/18C23F1/34
CPCC23F1/18C23F1/34
Inventor 朱德权徐荣军黄世东季玮王海龙
Owner 绍兴德汇半导体材料有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products