Device based on high-conductivity two-dimensional bismuth film, preparation method and application
A high-conductivity, thin-film device technology, which is applied in the manufacture/processing of thermoelectric devices, chemical instruments and methods, and thermoelectric device junction lead-out materials, etc., can solve the problems of low thermoelectric figure of merit and lack of thermoelectric performance, and achieve improved Efficiency, low requirements for experimental equipment, and simple process
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0039] A method for preparing a device based on a two-dimensional bismuth film with high conductivity, the method is as follows figure 1 As shown, it specifically includes the following steps:
[0040] (1) Take a pure silicon wafer with a thickness of 0.5 mm as the substrate, soak it in acetone, isopropanol, and deionized water in sequence, then ultrasonically clean it, and then dry it with a nitrogen gun;
[0041] (2) Evaporate a bismuth film with an electron beam, the thickness of the bismuth film is 20nm, then soak the pure silicon wafer with the bismuth film deposited with acetone and perform ultrasonic cleaning. , repeated 10 times, then the sample was rinsed with acetone, isopropanol, and deionized water in sequence, and finally dried with a nitrogen gun to obtain a pure silicon wafer with a clean two-dimensional bismuth film on the surface;
[0042] (3) Place the pure silicon wafer with a clean two-dimensional bismuth film on the surface of the coating machine, and use...
Embodiment 2
[0049] A method for preparing a device based on a two-dimensional bismuth film with high conductivity, the method is as follows figure 1 As shown, it specifically includes the following steps:
[0050] (1) Take a pure silicon wafer with a thickness of 0.5 mm as the substrate, soak it in acetone, isopropanol, and deionized water in sequence, then ultrasonically clean it, and then dry it with a nitrogen gun;
[0051] (2) Evaporate a bismuth film with an electron beam, the thickness of the bismuth film is 30nm, then soak the pure silicon wafer with the bismuth film deposited with acetone and perform ultrasonic cleaning. , repeated 10 times, then the sample was rinsed with acetone, isopropanol, and deionized water in sequence, and finally dried with a nitrogen gun to obtain a pure silicon wafer with a clean two-dimensional bismuth film on the surface;
[0052](3) Place the pure silicon wafer with a clean two-dimensional bismuth film on the surface of the coating machine, and use ...
Embodiment 3
[0058] A method for preparing a device based on a two-dimensional bismuth film with high conductivity, the method is as follows figure 1 As shown, it specifically includes the following steps:
[0059] (1) Get a silicon chip with an oxide layer with a thickness of 0.5mm as the substrate, soak it in acetone, isopropanol, and deionized water successively, then ultrasonically clean it, and dry it with a nitrogen gun;
[0060] (2) Pre-treat the silicon substrate by immersing it in a diluted hydrofluoric acid solution to remove oxides on its surface, and place it in a high-vacuum system within 20 minutes after treatment to limit its re-oxidation. Using molecular beam epitaxy to grow two-dimensional bismuth on silicon with the surface oxide layer removed, the growth direction is the (111) plane of silicon, and the growth rate is at room temperature The thickness of the grown two-dimensional bismuth is 30nm.
[0061] (3) Place the pure silicon wafer with a clean two-dimensional bi...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More