Preparation method of BVO/CN/Co photo-anode sensor

A sensor and photoanode technology, applied in the field of sensors, can solve the problems of complex operation, unfavorable practical application, increase of sensor cost, etc., and achieve the effect of reducing manufacturing cost, increasing reactive active sites, and improving photoelectric performance

Active Publication Date: 2021-12-03
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In summary, the current research on semiconductor photoelectric biosensors is mainly focused on the biometric unit, such as combining nucleic acid amplification technology with photoelectric technology to increase the sig

Method used

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  • Preparation method of BVO/CN/Co photo-anode sensor
  • Preparation method of BVO/CN/Co photo-anode sensor
  • Preparation method of BVO/CN/Co photo-anode sensor

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Embodiment

[0031] 1. This embodiment relates to a method for preparing a BVO / CN / Co photoanode sensor. figure 1 Shown: including the following steps:

[0032] Step 1, preparation of bismuth vanadate substrate:

[0033] Dissolve 3mmol of bismuth vanadate pentahydrate and 40mmol of sodium iodide in 100ml of ultrapure water, adjust the pH of the solution to 1.2 with nitric acid, add 0.0135mol of ethanol solution of p-benzoquinone, stir evenly, and obtain an electrodeposition solution;

[0034] A three-electrode system is adopted, the working electrode is a cleaned FTO, the counter electrode is a platinum sheet, and the reference electrode is a silver silver chloride reference electrode; the deposition potential is -0.5V, and the deposition time is 600 seconds to obtain a bismuth oxyiodide film;

[0035]Coat 40ul of vanadyl acetylacetonate solution on the bismuth oxyiodide film, dry at 50°C, and anneal in a muffle furnace at 450°C for 60 minutes to obtain a bright yellow film;

[0036] Remo...

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Abstract

The invention provides a preparation method of a BVO/CN/Co photo-anode sensor. The preparation method comprises the following steps: step 1, preparing a bismuth vanadate substrate; step 2, spin-coating 50 microliters of carbon nitride dispersion liquid on a bismuth vanadate film for three times, and carrying out heat treatment at 250 DEG C for 30 minutes to obtain a bismuth vanadate carbon nitride photo-anode; and preparing a Co catalyst into a 0.5 mM solution, soaking the obtained bismuth vanadate carbon nitride photo-anode for 2 minutes, and annealing for 30 minutes to obtain the BVO/CN/Co photo-anode sensor. In the construction of the BVO/CN/Co photo-anode sensor, the carbon nitride and the Co cocatalyst have a synergistic effect, so that the promotion effect is achieved in the aspects of reducing the surface state, improving the carrier concentration and increasing reaction active sites, and the photoelectric property of the photo-anode is greatly improved; after the pi-rich material and the bismuth vanadate material are introduced and compounded, the organic conjugated material is utilized to adsorb the aptamer, so that the manufacturing cost of the sensor is reduced.

Description

technical field [0001] The invention belongs to the field of sensors; in particular, it relates to a preparation method of a BVO / CN / Co photoanode sensor. Background technique [0002] At present, a simple, rapid and sensitive biomolecular analysis method is one of the most important and popular research topics in analytical chemistry. Especially in the fields of disease diagnosis, environmental monitoring, drug analysis, food safety analysis, life analysis and pathogenic microorganism research. Photoelectrochemical (PEC) analysis method is a new type of analysis method developed after optical, photochemical and electrochemical methods. It has obvious advantages such as simplicity, high efficiency, low background signal, high sensitivity, and good stability, so it has received great attention and extensive research from scholars. During the development of PEC biosensors, the screening of optoelectronic materials with excellent performance, the combination of efficient signa...

Claims

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Application Information

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IPC IPC(8): G01N27/327G01N21/27
CPCG01N27/3275G01N21/27
Inventor 补钰煜王琳敖金平
Owner XIDIAN UNIV
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