Preparation method of KTN/PI composite film with high breakdown voltage and low dielectric loss

A composite film and high breakdown technology, which is applied in the field of preparation of KTN/PI composite film, can solve the problems of increased energy consumption and high temperature, and achieve the effects of increased breakdown field strength, reduced energy consumption, and simple preparation process

Pending Publication Date: 2021-12-10
HARBIN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] 2. The temperature required for the surface modification reaction of nanoparticles is too high
In this method, hydrogen peroxide is used to carry out hydroxylation treatment on nanoparticles, and secondly, a coupling agent is added to continuously stir. However, the whole process needs to be continuously maintained at a temperature of 70 degrees Celsius, which increases energy consumption.

Method used

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  • Preparation method of KTN/PI composite film with high breakdown voltage and low dielectric loss
  • Preparation method of KTN/PI composite film with high breakdown voltage and low dielectric loss
  • Preparation method of KTN/PI composite film with high breakdown voltage and low dielectric loss

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Example 1: KTN-NH 2 / PI composite film 1

[0029] 1) Hydrothermal method synthesizing potassium nanostructure (KTN) to obtain KTN powder;

[0030] 2) The KTN is modified based on the simple solution method, and N, N'-dimethylformamide (DMF) is selected as a solvent, and 1 gram of KTN powder is dissolved in a 10 ml DMF solution to obtain a mixture 1;

[0031] 3) Stirring at normal temperature, slowly dropped into the mixture 1 of 3- (2-aminoethylene) propyl methoxycidilisily dipolygene as a modifier, pair The KTN surface was modified, followed by 24 hours, the resulting product was washed twice with DMF and ethanol, respectively, 10 hours at 60 degrees Celsius, resulting in an amino-free KTN-NH. 2 powder;

[0032] 4) A polyimide group (PI) composite film precursor is prepared by an in-situ polymerization method, which will be modified KTN powder (KTN-NH 2 Add to the precursor, heat 1 hour at the temperature of 80, 100, 200, 300, and 330 degrees Celsius, and the KTN-NH is ad...

Embodiment 2

[0036] Example 2: KTN-NH 2 / PI composite film 2

[0037] 1) Hydrothermal method synthesizing the KTN powder of the nanostructure;

[0038] 2) The KTN is modified based on the simple solution method, and N, N'-dimethylformamide (DMF) is selected as a solvent, and 1 gram of KTN powder is dissolved in a 10 ml DMF solution to obtain a mixture 1;

[0039] 3) Stirring at normal temperature, slowly dropped into the mixture 1 of 3- (2-aminoethylene) propyl methoxy silicone coupling agent of 13: 1 as a modifier, pair The KTN surface was modified, followed by reaction for 22 hours, the resulting product was washed twice with DMF and ethanol, respectively, 10 hours at 60 degrees Celsius, resulting in an amino-based KTN-NH. 2 powder;

[0040] 4) A polyimide group (PI) composite film precursor is prepared by an in-situ polymerization method, which will be modified KTN powder (KTN-NH 2 In the top of the precursor, it is 1 hour at 80, 100, 200, 300, and 330 degrees Celsius, and KTN-NH having a ...

Embodiment 3

[0042] Example 3: KTN-NH 2 / Pi composite film 3

[0043] 1) Hydrothermal method synthesizing the KTN powder of the nanostructure;

[0044] 2) REprising treatment, N, N'-dimethylformamide (DMF) is used as a solvent based on a simple solution method, and 1 gram of KTN powder is dissolved in a 10 ml DMF solution to obtain a mixture 1;

[0045] 3) Stirring at normal temperature, slowly dropped into the mixture 1 of 3- (2-aminoethylene) propyl methoxycidilisilyl coupling agent having a KTN mass ratio of 10: 1 as a modifier. The KTN surface was modified, followed by reaction for 20 hours, and the resulting product was washed twice with DMF and ethanol, respectively, dried at 60 degrees Celsius for 10 hours, and obtained an amino-free KTN-NH. 2 powder;

[0046] 4) A polyimide group (PI) composite film precursor is prepared by an in-situ polymerization method, which will be modified KTN powder (KTN-NH 2 In the top of the precursor, it is 1 hour at 80, 100, 200, 300, and 330 degrees Celsi...

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Abstract

The invention discloses a preparation method of a KTN/PI composite film with high breakdown voltage and low dielectric loss. The preparation method comprises the following steps: firstly, modifying the surface of potassium tantalate niobate (KTN) by using a 3-(2-aminoethylamino)propylmethyldimethoxysilane coupling agent; and then preparing a PI-based composite film precursor through an in-situ polymerization method, carrying out heating at a temperature of 80-330 DEG C, and carrying out thermal imidization to prepare the KTN-NH2/PI composite film with a mass fraction of 3-11%. Compared with KTN/PI, the breakdown field strength of the KTN-NH2/PI composite film can reach 242.12 kilovolt/mm, which is 1.49 times of the breakdown field strength of the KTN/PI. When test frequency is 1.0 * 10<5> Hz, the loss tangent value of the KTN-NH2/PI composite film with a mass fraction of 3% is lower than 0.007.

Description

Technical field [0001] The present invention relates to the preparation of nanocomposite membranes, and is related to a method for preparing a KTN / PI composite film that is highly shocked, low-loss. Background technique [0002] In recent years, the polymer-based nanocomposite film is widely used in the field of aviation power systems, power transmission and wind power due to its superior electrical properties. However, since the surface of the inorganic nanoparticles can be high, the nanoparticles are agglomerated, and the compatibility with the polymer matrix can cause electric field distortion, corresponding leakage current and dielectric loss increase, while at the same time, the breakdown field is significantly reduced . In order to further improve the compatibility between the ceramic filler and the substrate, the nanoparticles are often required to be surface modified before the film is prepared. Conventional surface modifications include: dopamine, phosphoric acid, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08L79/08C08K9/06C08K3/24
CPCC08J5/18C08J2379/08C08K3/24C08K9/06C08K2201/011
Inventor 林家齐延妮刘欣美
Owner HARBIN UNIV OF SCI & TECH
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