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A kind of ultra-thin diamond-metal matrix composite material with high thermal conductivity and low expansion and its preparation method and application

A composite material and diamond technology, applied in metal material coating technology, semiconductor devices, semiconductor/solid device components, etc., can solve the problems of diamond cracks, poor affinity, easy graphitization, etc.

Active Publication Date: 2022-07-12
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, although the thermal conductivity of diamond particles used in the prior art is high at room temperature, the thermal stability at high temperatures is poor, and it is easy to graphitize. There will be defects such as cracks, and there is a high interface energy between diamond and metal, and the affinity is poor

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Preparation of diamond reinforcement

[0038] Using 200μm single crystal diamond particles as the raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. The process is: the mass flow ratio of the incoming atmosphere is CH 4 :H 2 = 2:98, the number of growth is 2 times, and the time of each growth is 20min, and finally a polycrystalline diamond transition layer with a maximum degree of 400nm is obtained.

[0039] Then, a doped diamond outer shell layer is grown on the surface of the polycrystalline diamond transition layer by hot wire chemical vapor deposition to obtain a diamond reinforcement. Deposition process parameters: the distance of the hot wire is 10mm, the thickness of the hot wire is 0.5mm, the growth temperature is 850°C, the deposition pressure is 3KPa, and the thickness of the diamond film is 2μm by controlling the deposition time; during the chemical vapor deposition, t...

Embodiment 2

[0044] Preparation of diamond reinforcement

[0045] Using 200μm single crystal diamond particles as the raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. The process is: the mass flow ratio of the incoming atmosphere is CH 4 :H 2 = 2:98, the number of growth is 2 times, and the time of each growth is 20min, and finally a polycrystalline diamond transition layer with a maximum degree of 400nm is obtained.

[0046] Then, a doped diamond outer shell layer is grown on the surface of the polycrystalline diamond transition layer by hot wire chemical vapor deposition to obtain a diamond reinforcement. Deposition process parameters: the distance of the hot wire is 10mm, the thickness of the hot wire is 0.5mm, the growth temperature is 850°C, the deposition pressure is 3KPa, and the thickness of the diamond film is 3μm by controlling the deposition time; during the chemical vapor deposition, t...

Embodiment 3

[0051] Preparation of diamond reinforcement

[0052] Using 200μm single crystal diamond particles as the raw material, the polycrystalline diamond transition layer is first deposited on the surface of the diamond particles by chemical deposition. The process is: the mass flow ratio of the incoming atmosphere is CH 4 :H 2 = 2:98, the number of growth is 2 times, and the time of each growth is 20min, and finally a polycrystalline diamond transition layer with a maximum degree of 400nm is obtained.

[0053] Then, a doped diamond outer shell layer is grown on the surface of the polycrystalline diamond transition layer by hot wire chemical vapor deposition to obtain a diamond reinforcement. Deposition process parameters: the distance of the hot wire is 10mm, the thickness of the hot wire is 0.5mm, the growth temperature is 850°C, the deposition pressure is 3KPa, and the thickness of the diamond film is 2μm by controlling the deposition time; during the chemical vapor deposition, t...

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PUM

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Abstract

The invention discloses a high thermal conductivity and low expansion ultra-thin diamond-metal matrix composite material and a preparation method and application thereof. The high thermal conductivity diamond / metal matrix composite material comprises a core-shell structure doped diamond and a metal matrix material, The core-shell structure doped diamond includes diamond and a diamond surface modification layer, and the diamond surface modification layer sequentially includes a diamond transition layer from the inside to the outside, and the doped diamond shell layer; the thickness of the diamond-metal matrix composite material In 0.1mm ~ 1mm. The preparation method adopts the gas pressure-assisted infiltration process technology, uses high-purity gas as a pressure source, acts on the surface of the molten liquid metal base, and realizes high-density composite of diamond and metal base material; the invention can effectively overcome the capillary in the infiltration process. It can realize high-pressure seepage molding, so that the material has high thermal conductivity, adjustable thermal expansion coefficient, better uniformity and higher reliability.

Description

technical field [0001] The invention belongs to the field of composite materials, in particular to a high thermal conductivity and low expansion ultra-thin diamond-metal matrix composite material and a preparation method and application thereof. Background technique [0002] With the rapid development of science and technology, the power and integration of electronic equipment used in aerospace, military, industry, national production and other fields are getting higher and higher, and heat dissipation has become an important factor restricting the development of these industries. Especially with the advent of the 5G communication era, the integration of electronic and semi-finished devices has increased geometrically, which has led to a rapid increase in the heat density of electronic devices. Studies have shown that for every 10 °C increase in the temperature of electronic components, the failure rate increases by about one percent. In addition, 55% of failures in electron...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C26/00C22C1/10C22C9/00C22C21/00C22C5/06C22C14/00C22C23/00C22C18/00C23C16/27C23C16/28C23C16/56C23C14/18H01L23/373
CPCC22C26/00C22C1/1036C22C1/101C22C9/00C22C21/00C22C5/06C22C14/00C22C23/00C22C18/00C23C16/271C23C16/278C23C16/279C23C16/28C23C16/56C23C16/4417C23C14/18C23C14/223H01L23/373H01L23/3732H01L23/3736C22C1/1073
Inventor 魏秋平周科朝马莉黄开塘李俊
Owner CENT SOUTH UNIV
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