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Pressure sensor, pressure sensing array and preparation method thereof

A pressure sensor, resistive pressure technology, applied in the field of sensing, can solve the problems of low sensing sensitivity and unsuitability for pressure sensing arrays, etc., and achieve the effects of enhanced sensitivity, reduced area, and reduced operating voltage

Active Publication Date: 2022-01-04
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can effectively reduce the working voltage of the prepared TFT sensing device and facilitate the preparation, the sensed signal cannot be efficiently coupled to the change of the regulating current in the TFT device, so the obtained sensing sensitivity is generally very low.
Moreover, the horizontal integration of TFT devices and sensing units is not suitable for realizing high-resolution pressure sensing arrays.

Method used

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  • Pressure sensor, pressure sensing array and preparation method thereof
  • Pressure sensor, pressure sensing array and preparation method thereof
  • Pressure sensor, pressure sensing array and preparation method thereof

Examples

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preparation example Construction

[0070] Not only that, this specific embodiment also provides a method for preparing the pressure sensing array as described above, image 3 It is a flow chart of the preparation method of the pressure sensing array in the specific embodiment of the present invention, Figure 4-Figure 11 It is a schematic diagram of the main process structure in the process of preparing the pressure sensing array according to the specific embodiment of the present invention. The structure of the pressure sensor in the pressure sensor array prepared in this specific embodiment can be found in figure 1 , the equivalent circuit diagram of the prepared pressure sensing array can be found in figure 2 . Such as Figure 1-Figure 11 Shown, the preparation method of described pressure sensor array, comprises the steps:

[0071] Step S31 , providing a substrate 100 .

[0072] Specifically, the substrate 100 can be ultrasonically cleaned with ethanol solution, acetone solution and deionized water, d...

Embodiment 1

[0098] The pressure sensing array is prepared through the following specific steps:

[0099] (1) Utilize ethanol solution, acetone solution and deionized water ethylene terephthalate (PET) substrate (namely described substrate 100) to carry out ultrasonic cleaning, dry after cleaning, adopt oxygen plasma or ultraviolet light / treating the surface of the substrate 100 with ozone;

[0100] (2) Prepare the row drive line 211 and the bottom gate electrode 101 of the thin film transistor on the substrate 100 by vacuum evaporation;

[0101] (3) Preparing a PVC insulating layer film on the bottom gate electrode 101 and the substrate 100 by using a spin coating process, and then performing ultraviolet crosslinking heating and drying to form the insulating layer 102;

[0102] (4) Prepare the column data line 221, the source electrode 103 and the drain electrode 104 of the thin film transistor on the insulating layer 102 by means of vacuum evaporation;

[0103] (5) modifying a layer o...

Embodiment 2

[0111] The pressure sensing array is prepared through the following specific steps:

[0112] (1) Utilize ethanol solution, acetone solution and deionized water to ultrasonically clean the polyethylene naphthalate (PEN) substrate, dry after cleaning, and use oxygen plasma or ultraviolet light / ozone to treat the substrate surface;

[0113] (2) Prepare row drive lines and bottom gate electrodes of thin film transistors on the substrate by means of inkjet printing;

[0114] (3) Forming a silicon dioxide insulating layer on the surface of the gate electrode by a plasma-enhanced chemical vapor deposition process;

[0115] (4) Prepare column data lines, source electrodes and drain electrodes of thin film transistors on the silicon dioxide insulating layer by means of inkjet printing;

[0116] (5) Forming an indium gallium zinc oxide (IGZO) semiconductor layer on the surface of the insulating layer by plasma enhanced chemical vapor deposition and photolithography;

[0117] (6) Prepa...

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Abstract

The invention relates to a pressure sensor, a pressure sensing array and a preparation method thereof. The pressure sensor comprises a thin film transistor, the thin film transistor comprises a substrate, a bottom gate electrode, an insulating layer, a source electrode, a drain electrode, a semiconductor layer, a passivation layer and a top gate electrode, and the top gate electrode and the drain electrode are electrically connected through an interconnection structure penetrating through the passivation layer; a resistive pressure sensitive film which is located above the top gate electrode and the passivation layer, and a gap is formed between the resistive pressure sensitive film and the top gate electrode; and a top electrode which is located on the surface, deviating from the top gate electrode, of the resistive pressure sensitive film. According to the invention, the resistive pressure sensitive thin film and the thin film transistor are longitudinally integrated, so that the area of the pressure sensor is reduced, and a high-resolution sensor array is easy to prepare.

Description

technical field [0001] The invention relates to the field of sensing technology, in particular to a pressure sensor, a pressure sensing array and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of wearable products, flexible sensor components have become one of the hot topics explored by researchers. Among them, the flexible pressure sensor has received extensive attention, and has a very broad market prospect in the fields of artificial electronic skin, flexible touch screen, intelligent robot and medical health. [0003] Currently, research on flexible pressure sensors can be based on a variety of working principles, including, for example, capacitive, resistive, piezoelectric, and thin-film transistor. Among them, the construction of flexible pressure sensors based on thin film transistors (thin film transistor, TFT) has the following advantages: (1) The detected pressure signal changes can be converted and amplifie...

Claims

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Application Information

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IPC IPC(8): G01L1/18G01L1/00H01L27/12H01L21/77
CPCG01L1/18G01L1/005H01L27/1255H01L27/1259
Inventor 郭小军陈苏杰李骏
Owner SHANGHAI JIAO TONG UNIV
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