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Novel positive bias auxiliary photo-Fenton technology

A technology of auxiliary light and positive bias, which is applied in the direction of light water/sewage treatment, oxidized water/sewage treatment, special compound water treatment, etc., can solve the problems of high energy consumption and low utilization rate of electrons, and achieve the purpose of prolonging the life of electrons, Improve the utilization rate and promote the effect of photogenerated electron-hole separation

Pending Publication Date: 2022-01-07
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] At present, although photo-Fenton technology, electro-Fenton technology and photo-Fenton technology can separate electrons and holes, they mainly use the separated holes to generate OH to degrade pollutants, the utilization rate of separated electrons is low, and the energy consumption is high. , to this end, we propose a new positive bias auxiliary light Fenton technology to solve the above problems

Method used

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  • Novel positive bias auxiliary photo-Fenton technology
  • Novel positive bias auxiliary photo-Fenton technology
  • Novel positive bias auxiliary photo-Fenton technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] (1) CC / TiO 2 / Preparation of CuFe-LDH material

[0048] At room temperature, ultrasonically clean the carbon cloth with acetone, ethanol, and deionized water, each time for 10 minutes, and then dry at 60°C for 30 minutes; soak the clean carbon cloth in 0.075M tetrabutyl titanate solution , and then dried at 60°C for 20min, repeated three times; then the sample was heated in a muffle furnace at 500°C for 1h; 0.66mL tetrabutyl titanate was added to 30mL of hydrochloric acid, and stirred continuously for 6h; the solution was transferred to the reaction Put carbon cloth in the kettle, heat at 150°C for 12h; wash the carbon cloth with deionized water, then dry at 60°C, repeat twice; put the carbon cloth in the muffle furnace, heat at 550°C for 2h, and get CC / TiO 2 Material.

[0049] Weigh 0.1389g ferric nitrate nonahydrate, 0.1664g copper nitrate pentahydrate, 0.7507g urea, 0.185g ammonium fluoride, dissolve in 50mL ultrapure water, stir for 30min, transfer to the reacti...

Embodiment 2

[0059] Keep the operating steps and other degradation conditions in Example 1 unchanged, compare the degradation situation of nitrobenzene under light conditions, degrade for 60min, and record the degradation rate and degradation kinetics of nitrobenzene under different conditions as follows: Figure 8 As shown, the degradation kinetic parameters are shown in Table 2:

[0060] Depend on Figure 8 It can be seen that the degradation rate of nitrobenzene is slow and the removal rate is low when there is no light and only bias is applied. When light and positive bias are applied, the degradation kinetic constant is changed from 0.009min -1 Increase to 0.075min -1 , the degradation rate of nitrobenzene was greatly improved.

[0061] Table 2 Degradation Kinetic Parameters

[0062] No light +0.6V bias Light +0.6V bias k(min -1 )

Embodiment 3

[0064] Keeping the operation steps and other degradation conditions in Example 1 unchanged, the degradation experiments were carried out under the conditions of applying bias voltages of 0V, +0.3V, +0.6V, +0.9V, and +1.2V, and the degradation was 60min. The degradation rate and degradation kinetics of nitrobenzene under bias voltage are as follows: Figure 9 , and the degradation kinetic parameters are listed in Table 3:

[0065] Depend on Figure 9 It can be seen that the degradation kinetic constant of nitrobenzene is the largest and the degradation rate is the fastest when the applied bias voltage is 0.6V.

[0066] Table 3 Degradation Kinetic Parameters

[0067]

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Abstract

The invention belongs to the technical field of water treatment, and particularly relates to a novel positive bias auxiliary photo-Fenton technology which comprises the following steps: step 1, preparing a material, namely preparing a CC / TiO2 / CuFe-LDH material; and step 2, carrying out bias voltage-assisted Fenton photo-reaction to degrade nitrobenzene. The technology is reasonable in design, and under the action of positive bias voltage, the energy band of the semiconductor material is bent upwards, the band gap is narrowed, photo-induced electron-hole separation is promoted, and the service life of current carriers can be prolonged; under the action of positive bias voltage, photo-induced electrons excited by TiO2 illumination move towards CuFe-LDH, and the photo-induced electrons promote circulation of Cu<3+> / Cu<2+> and Fe<3+> / Fe<2+>; and .OH generated by holes is used for degrading pollutants, and can effectively separate photo-induced electron holes and improve the utilization rate of the photo-induced electron holes.

Description

technical field [0001] The invention relates to the technical field of sewage treatment, in particular to a novel positive bias auxiliary light Fenton technology. Background technique [0002] Refractory organic pollutants are one of the largest types of pollutants discharged into water bodies by industrial manufacturing, agricultural production and other human activities. They have caused adverse effects on the environment and public health, and have become a worldwide problem. Common degradable organic pollutants The methods of biodegradation include microbial degradation, electrochemical method and advanced oxidation method. Among many technologies, advanced oxidation technology has low energy consumption and low cost, and has a good development prospect. In 1894, French scientist Fenton discovered that under acidic conditions, H 2 o 2 in Fe 2+ Under the catalytic action of tartaric acid can be oxidized. In 1964, Eisenhouser first applied Fenton reagent to the treatm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C02F1/461C02F1/72C02F1/30C02F101/30C02F101/34C02F101/38
CPCC02F1/46109C02F1/4672C02F1/30C02F2001/46133C02F2101/30C02F2101/34C02F2101/38C02F2305/026
Inventor 安永磊董喆刘璐杜兴源朱雪岩
Owner JILIN UNIV
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