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Low-temperature-resistant PVDF (Polyvinylidene Fluoride) film for photovoltaic back plate and preparation method of PVDF film

A photovoltaic backplane and low-temperature technology, applied in the field of PVDF film, can solve the problems of low mechanical properties and achieve the effects of excellent mechanical properties, good barrier effect, and excellent weather resistance

Active Publication Date: 2022-01-11
嘉兴高正新材料科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the technical deficiency of the low mechanical properties of the existing PVDF film on the basis of ensuring the weather resistance and barrier property of the PVDF film. The preparation method is simple and easy, and the existing equipment can be produced. The PVDF film prepared by the preparation method has excellent mechanical properties at low temperature, specifically, it is maintained at a low temperature of -40°C for 60 minutes, and the mechanical properties are excellent, and the transverse elongation at break is 50-70%, and it is better at the same time. To simulate the extreme weather with large temperature difference between day and night, the PVDF film prepared by the present invention also passed the test of high temperature baking (145°C, 30min) and then low temperature (-40°C, 60min), the mechanical properties were also excellent, and the transverse fracture elongation The rate is 40-50%, and the low-temperature mechanical properties are better than ordinary PVDF membranes on the market

Method used

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  • Low-temperature-resistant PVDF (Polyvinylidene Fluoride) film for photovoltaic back plate and preparation method of PVDF film
  • Low-temperature-resistant PVDF (Polyvinylidene Fluoride) film for photovoltaic back plate and preparation method of PVDF film

Examples

Experimental program
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Effect test

Embodiment 1

[0032] A method for preparing a low-temperature-resistant PVDF film for a photovoltaic backplane, comprising the following steps:

[0033] (1) Take 1-ethynyl-1-cyclohexanol, triethylamine and dichloromethane, stir evenly, cool down to 0°C, slowly add acryloyl chloride, dropwise for 2h, stir at 25°C for 14h, heat up to 35°C, heat-retain for 3 hours, remove the solvent by rotary evaporation, wash with saturated brine, and dry to obtain the alkynylated acrylate monomer. The molar ratio of 1-ethynyl-1-cyclohexanol, triethylamine and acryloyl chloride is 4:5:4.25.

[0034]Take 1 / 2 amount of dodecylbenzenesulfonic acid and 1 / 2 amount of OP-10, dissolve in deionized water, add organosilicon monomer, stir well to obtain solution A; take 1 / 2 amount of dodecane Base benzene sulfonic acid and 1 / 2 amount of OP-10, dissolve in deionized water, slowly add solution A dropwise, react for 3 hours, and obtain a nuclear emulsion; the total amount of dodecylbenzene sulfonic acid is 2% of the mas...

Embodiment 2

[0042] A method for preparing a low-temperature-resistant PVDF film for a photovoltaic backplane, comprising the following steps:

[0043] (1) Take 1-ethynyl-1-cyclohexanol, triethylamine and dichloromethane, stir evenly, cool down to 0°C, slowly add acryloyl chloride, dropwise for 2h, stir at 28°C for 13h, heat up to 38°C, heat-retain for 2.5 hours, remove the solvent by rotary evaporation, wash with saturated brine, and dry to obtain the alkynylated acrylate monomer. The molar ratio of 1-ethynyl-1-cyclohexanol, triethylamine and acryloyl chloride is 4:5:4.25.

[0044] Take 1 / 2 amount of dodecylbenzenesulfonic acid and 1 / 2 amount of OP-10, dissolve in deionized water, add organosilicon monomer, stir well to obtain solution A; take 1 / 2 amount of dodecane Base benzene sulfonic acid and 1 / 2 amount of OP-10, dissolve in deionized water, slowly add solution A dropwise, react for 3.2h, and obtain nuclear emulsion; the total amount of dodecylbenzene sulfonic acid is 2% of the mass ...

Embodiment 3

[0052] A method for preparing a low-temperature-resistant PVDF film for a photovoltaic backplane, comprising the following steps:

[0053] (1) Take 1-ethynyl-1-cyclohexanol, triethylamine and dichloromethane, stir well, cool down to 0°C, slowly add acryloyl chloride, dropwise for 2h, stir at 30°C for 12h, heat up to 40°C, heat-retain for 2 hours, remove the solvent by rotary evaporation, wash with saturated brine, and dry to obtain the alkynylated acrylate monomer. The molar ratio of 1-ethynyl-1-cyclohexanol, triethylamine and acryloyl chloride is 4:5:4.25.

[0054] Take 1 / 2 amount of dodecylbenzenesulfonic acid and 1 / 2 amount of OP-10, dissolve in deionized water, add organosilicon monomer, stir well to obtain solution A; take 1 / 2 amount of dodecane Base benzene sulfonic acid and 1 / 2 amount of OP-10, dissolve in deionized water, slowly add solution A dropwise, react for 3.5 hours, and obtain nuclear emulsion; the total amount of dodecylbenzene sulfonic acid is 2% of the mass...

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Abstract

The invention discloses a low-temperature-resistant PVDF (Polyvinylidene Fluoride) film for a photovoltaic backboard and a preparation method of the PVDF film. According to the scheme, PVDF, polymethyl methacrylate, a magnetization toughening agent, titanium dioxide, an antioxidant, an ultraviolet absorbent and other components are used as raw materials, and the prepared PVDF film is good in weather resistance, high in barrier property, low in water permeability, capable of resisting low temperature, excellent in mechanical property in a cold environment of -40 DEG C and free of cracking. The preparation method is reasonable in process design and appropriate in component proportion, the prepared PVDF film has excellent weather resistance and ultraviolet aging resistance, and the product is excellent in mechanical property and good in barrier effect, can be widely applied to the photovoltaic field and has high practicability.

Description

technical field [0001] The invention relates to the technical field of PVDF films, in particular to a low-temperature-resistant PVDF film for photovoltaic backplanes and a preparation method thereof. Background technique [0002] With the progress of society and the improvement of human awareness of the environment, the development of new energy has become the focus of global attention. The global new energy industry is developing rapidly, and photovoltaic power generation projects are particularly prominent. The photovoltaic power generation projects in ordinary environmental areas are increasingly saturated. At present, the construction of photovoltaic power generation projects It is being carried out to the severe cold regions of the world. However, the PVDF films currently on the market for photovoltaic backplanes are generally not resistant to low temperatures. Generally, under zero degrees or in environments with large temperature differences between day and night, the...

Claims

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Application Information

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IPC IPC(8): C08J5/18C08L27/16C08L33/12C08L51/00C08K9/10C08K3/22
CPCC08J5/18C08J2327/16C08J2433/12C08J2451/00C08K9/10C08K2003/2275C08K2201/01C08K5/28C08K3/22C08K2003/2241C08K9/06
Inventor 郑泓聂福
Owner 嘉兴高正新材料科技股份有限公司