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Preparation method of copper-clad plate with low dielectric constant, low dielectric loss and low CTE

A low dielectric constant, low dielectric technology, applied in the preparation of low CTE copper clad laminates, low dielectric constant, low dielectric loss, can solve the problems of large dielectric loss dimensional stability, limited applications, etc., to achieve good Effects of mechanical and electrical properties, high Tg, and high product precision

Pending Publication Date: 2022-01-28
SHANDONG JINBAO ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The epoxy phenolic resin system commonly used on copper clad laminates has a large dielectric loss and general dimensional stability, which limits its application in the field of high-frequency, high-speed, and high-density interconnections.

Method used

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  • Preparation method of copper-clad plate with low dielectric constant, low dielectric loss and low CTE
  • Preparation method of copper-clad plate with low dielectric constant, low dielectric loss and low CTE
  • Preparation method of copper-clad plate with low dielectric constant, low dielectric loss and low CTE

Examples

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Effect test

Embodiment 1

[0034] A method for preparing a copper clad laminate with low dielectric constant, low dielectric loss, and low CTE, comprising the steps of:

[0035] (1) Preparation of resin glue: by weight, 85 parts of special epoxy resin dicyclopentadiene phenol type epoxy resin (epoxy equivalent is 260-280g / eq, purchased from Nippon Kayaku), 180 parts SMA resin (the copolymerization ratio of styrene and maleic anhydride is 6:1, Mw:6000-6500, purchased from Sartomer, USA), 25 parts of DCPD type low-dielectric benzoxazine resin, 0.1 part of cross-linking curing Agent 2-methyl-4-ethylimidazole, 0.1 part of dispersant BYK-W 903 type wetting and dispersing agent, 60 parts of solvent butanone, 60 parts of flame retardant decabromodiphenyl ether (bromine content 81%-83%) ), 50 parts of high-purity ultrafine spherical nano-amorphous silicon powder (SiO 2 The content is up to 99.9%, the average particle size is 3-5μm, the maximum particle size is not more than 20μm), 50 parts of ultra-fine electr...

Embodiment 2

[0039] A method for preparing a copper clad laminate with low dielectric constant, low dielectric loss, and low CTE, comprising the steps of:

[0040](1) Preparation of resin glue: by weight, 75 parts of special epoxy resin dicyclopentadiene phenol type epoxy resin (epoxy equivalent is 260-280g / eq, purchased from Nippon Kayaku), 170 parts SMA resin (the copolymerization ratio of styrene and maleic anhydride is 6:1, Mw:6000-6500, purchased from Sartomer, USA), 30 parts of DCPD type low dielectric benzoxazine resin, 0.1 part of cross-linking curing Agent 2-methyl-4-ethylimidazole, 0.1 parts of dispersant BYK-W 903, 40 parts of methyl ethyl ketone, 20 parts of xylene, 60 parts of flame retardant decabromodiphenyl ether (bromine content 81%-83% ), 70 parts of high-purity ultrafine spherical nano-amorphous silicon powder (SiO 2 The content is 99.9%, the average particle size is 3-5μm, the maximum particle size is not more than 20μm), 30 parts of ultra-fine electronic grade E-glass...

Embodiment 3

[0044] A method for preparing a copper clad laminate with low dielectric constant, low dielectric loss, and low CTE, comprising the steps of:

[0045] (1) Preparation of resin glue: by weight, 60 parts of special epoxy resin dicyclopentadiene phenol type epoxy resin (epoxy equivalent is 260-280g / eq, purchased from Nippon Kayaku), 150 parts SMA resin (the copolymerization ratio of styrene and maleic anhydride is 6:1, Mw:6000-6500, purchased from Sartomer, USA), 40 parts of DCPD type low dielectric benzoxazine resin, 0.2 part of 2-methyl Base-4-ethylimidazole, 0.04 parts of zinc 2-ethyl octanoate, 0.1 parts of dispersant BYK-W 903, 40 parts of solvent butanone, 45 parts of flame retardant decabromodiphenyl ether (bromine content 81%-83 %), 50 parts of high-purity ultrafine spherical nano-amorphous silicon powder (SiO 2 The content is 99.9%, the average particle size is 3-5μm, the maximum particle size is not more than 20μm), 30 parts of ultra-fine electronic grade E-glass powde...

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Abstract

The invention belongs to the technical field of copper-clad plate production, and relates to a preparation method of a copper-clad plate with low dielectric constant, low dielectric loss and low CTE. The method comprises the following steps: (1) preparing a resin glue solution: mixing 60-100 parts by weight of special epoxy resin, 150-200 parts by weight of SMA resin, 10-40 parts by weight of benzoxazine resin, 0.1-20 parts by weight of a cross-linking curing agent, 0.1-1 part by weight of a dispersing agent, 40-100 parts by weight of a solvent, 30-80 parts by weight of a flame retardant, and 10-150 parts by weight of a filling material, and carrying out emulsifying and uniformly stirring; (2) preparing a prepreg; and (3) preparing the copper-clad plate with low dielectric constant, low dielectric loss and low CTE. The dielectric constant of the prepared copper-clad plate is less than 3.9, the dielectric loss is less than 0.007, the Z-CTE is less than or equal to 1.05%, the T288 can reach 120 minutes without layering, the copper-clad plate has lower dielectric loss and higher heat resistance, is suitable for the high-level design of a high-frequency and high-speed circuit board, and greatly improves the packaging efficiency and the reliability of a PCB (Printed Circuit Board).

Description

technical field [0001] The invention belongs to the technical field of copper clad laminate production, and in particular relates to a method for preparing a copper clad laminate with low dielectric constant, low dielectric loss and low CTE. Background technique [0002] With the widespread popularization of 5G communication technology, electronic products are changing with each passing day. In order to meet the high-precision control of the characteristic impedance of the whole electronic product and the high-speed transmission of signals, it must be excellent in the dielectric properties of CCL (copper foil substrate) (with low dielectric constant, etc.). Especially under high frequency and high humidity conditions, its dielectric properties are required to be stable. The guarantee and improvement of the quality of the plated via hole is directly related to the long-term operation reliability of the whole electronic product. Therefore, the manufacturing quality of the vi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B15/092B32B15/20B32B27/38B32B37/06B32B37/10C08L35/06C08L63/00C08L61/34C08K7/14C08K5/06C08K5/03C08K3/40C08K3/36C08J5/24
CPCB32B15/092B32B15/20B32B27/38B32B37/06B32B37/10C08J5/24C08J2335/06C08J2435/06C08J2461/34C08K7/14C08K5/06C08K5/03C08K3/40C08K3/36
Inventor 李凌云杨永亮姜晓亮刘政郑宝林栾好帅姜大鹏
Owner SHANDONG JINBAO ELECTRONICS
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