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Flux for growth of divalent metal ion doped beta-gallium sesquioxide crystal and crystal growth method based on flux

A divalent metal ion, crystal growth technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve difficult to obtain high-quality β-Ga crystal, gallium oxide melt composition segregation, corrosion and pollution and other problems, to achieve the effect of convenient real-time crystal growth, controllable crystal size, and easy transportation

Pending Publication Date: 2022-03-22
SHANGHAI INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Component segregation occurs in the gallium oxide melt, making it difficult to obtain high-quality β-Ga 2 o 3 the crystal
However, using the flux method is easy to introduce impurities into the crystal, and many fluxes have certain toxicity, which will cause corrosion and pollution. In addition, the β-Ga grown by the flux method 2 o 3 The crystal size is small and the composition is not uniform

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Example 1: Using Bi 2 O 3 – Preparation of Cu-doped β-Ga by LiF flux system 2 O 3 crystal

[0024] with β-Ga 2 O 3 Powder and Bi 2 O 3 , LiF and CuO as raw materials, molar ratio β-Ga 2 O 3 : Bi 2 O 3 : LiF:CuO=0.2:0.78:0.05:0.0002 Ingredients, weigh 37.49 grams of β-Ga 2 O 3 Powder, 363.45 g Bi 2 O 3 , 1.30 g LiF, 0.016 g CuO.

[0025] After grinding and mixing the weighed raw materials evenly, add Φ100×70mm in batches. 3 In the platinum crucible, the temperature is first heated to 1200 ℃ in a muffle furnace, and the material is kept at a constant temperature for 36 hours to obtain the crystal growth raw material.

[0026] The crystal growth raw material is put into the molten salt single crystal growth furnace heated by the resistance wire. The furnace tube of the single crystal growth furnace is a vertical hollow round tube; There is a small hole at the top corresponding to the center of the crucible for the seed rod to enter and exit, and the temper...

Embodiment 2

[0029] Example 2: Using Bi 2 O 3 – Preparation of Cu-doped β-Ga by NaF flux system 2 O 3 crystal

[0030] with β-Ga 2 O 3 Powder and Bi 2 O 3 , LiF and CuO as raw materials, molar ratio β-Ga 2 O 3 : Bi 2 O 3 : NaF: CuO = 0.25: 0.73: 0.08: 0.0002 Ingredients, weigh 46.86 grams of β-Ga 2 O 3 Powder, 340.15 g Bi 2 O 3 , 3.36 g NaF, 0.016 g CuO.

[0031] After grinding and mixing the weighed raw materials evenly, add Φ100×70mm in batches. 3 In the platinum crucible, first heat the temperature to 1250°C in a muffle furnace, and keep the temperature constant for 40 hours to obtain the crystal growth raw material. The crystal growth raw material is put into the molten salt single crystal growth furnace heated by the resistance wire. The furnace tube of the single crystal growth furnace is a vertical hollow round tube; There is a small hole at the top corresponding to the central position of the crucible for the seed rod to enter and exit, and the temperature is raise...

Embodiment 3

[0034] Example 3: Using Bi 2 O 3 –LiF flux system to prepare Zn-doped β-Ga 2 O 3 crystal

[0035] with β-Ga 2 O 3 Powder and Bi 2 O 3 , LiF and CuO as raw materials, molar ratio β-Ga 2 O 3 : Bi 2 O 3 :LiF::ZnO=0.23:0.77:0.04:0.0004 Ingredients, weigh 43.11 grams of β-Ga 2 O 3 Powder, 358.79 g Bi 2 O 3 , 1.04 g LiF, 0.033 g ZnO.

[0036] After grinding and mixing the weighed raw materials evenly, add Φ100×70mm in batches. 3 In the platinum crucible of , first heat up to 1210°C in a muffle furnace, and keep the temperature constant for 36 hours to obtain the crystal growth raw material.

[0037] The crystal growth raw material is put into the molten salt single crystal growth furnace heated by the resistance wire. The furnace tube of the single crystal growth furnace is a vertical hollow round tube; There is a small hole at the top corresponding to the center of the crucible for the seed rod to enter and exit, and the temperature is raised to 1200 ° C to complet...

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PUM

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Abstract

The invention discloses a fluxing agent system of a divalent metal ion doped beta-Ga2O3 crystal and a crystal growth method based on the fluxing agent system. A bismuth oxide-alkali metal fluoride system is a fluxing agent for growth of a beta-Ga2O3 crystal doped with divalent ions such as Ni < 2 + >, Cu < 2 + > and Zn < 2 + >, and the molar ratio of bismuth oxide to alkali metal fluoride in the system is (0.8-0.75): (0-0.1). According to the method, a bismuth oxide-alkali metal fluoride system is adopted as a hydrotropy system, the system can completely melt Ga2O3 and metal oxides in the raw materials at 900-1280 DEG C, and under the technological conditions of the method, the high-quality beta-Ga2O3 crystal doped with divalent metal ions such as Ni < 2 + >, Cu < 2 + > and Zn < 2 + > and with controllable crystal size and uniform components can finally grow.

Description

technical field [0001] The invention relates to a flux system for single crystal growth and a crystal growth method thereof, in particular to a Ni 2+ , Cu 2+ , Zn 2+ Equivalent metal ion doped β-Ga 2 O 3 A flux for crystals and a crystal growth method based on the flux. Background technique [0002] β-Ga 2 O 3 Crystal is the fourth generation wide bandgap semiconductor material, people pass Si 4+ , Sn 4+ , Ge 4+ , H + Equal doping, n-type doped β-Ga was realized and obtained 2 O 3 Semiconductor crystals and their applications in optical communication, photodetection and power devices in the deep ultraviolet region. Na, Mg, Ca, Cu, Ag, Zn, Cd, etc. can become effective p-type doping ions, entering β-Ga 2 O 3 crystal lattice, thereby obtaining p-type β-Ga 2 O 3 Semiconductor crystals (RSC Adv., 2016, 6, 78322). Currently, in β-Ga 2 O 3 Weak p-type conductivity is achieved in nanowires by Zn doping (J. Electrochem. Soc, 2011, (3) D136, Appl. Phys. Lett., 2005...

Claims

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Application Information

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IPC IPC(8): C30B9/12C30B29/22
CPCC30B9/12C30B29/22
Inventor 张彦房永征王占勇徐家跃龚震刘家文
Owner SHANGHAI INST OF TECH