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Wafer-level noble metal monatomic layer catalyst as well as preparation and application thereof

A single atomic layer, noble metal technology, applied in the direction of electrodes, electrolysis process, electrolysis components, etc., can solve the problems of low load rate, poor hydrogen production efficiency, etc., and achieve the effect of increased load capacity, excellent catalytic activity, and low cost

Active Publication Date: 2022-03-25
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing noble metal single-atom catalysts have a low loading rate, which can only reach 5wt%, and the hydrogen production efficiency is not good.

Method used

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  • Wafer-level noble metal monatomic layer catalyst as well as preparation and application thereof
  • Wafer-level noble metal monatomic layer catalyst as well as preparation and application thereof
  • Wafer-level noble metal monatomic layer catalyst as well as preparation and application thereof

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preparation example Construction

[0038] The preparation method of the wafer-level noble metal monoatomic layer catalyst comprises the following steps:

[0039] (1) On the growth substrate, the noble metal is deposited by thin film deposition technology to form a noble metal layer with a thickness of 0.5-3.0 nm.

[0040] Among them: the growth substrate refers to SiO 2 Any one of / Si, mica sheet, sapphire substrate, the size is 2 inches.

[0041] Thin film deposition techniques refer to electron beam evaporation or sputtering with a deposition rate of 0.1 Å / s.

[0042] (2) Put the chalcogen elemental source (sulfur powder or selenium powder) in the alumina boat, and place the growth substrate of the deposited precious metal in the tubular container along the direction of the airflow. The tubular container refers to the one with a heating device in the center Tube furnace. The carrier gas is introduced, and the carrier gas refers to argon gas with a flow rate of 20-50 sccm or hydrogen gas with a flow rate of...

Embodiment 1

[0046] Example 1 as figure 1 As shown, the preparation of wafer-scale noble metal monoatomic layer catalyst PtSe 1.26 Thin film: Deposit Pt thin film on the substrate first, then use CVD method to selenize, and finally obtain amorphous PtSe by low-temperature plasma etching 1.26 film. The specific process is as follows:

[0047] ⑴Using the electron beam evaporation method, at a rate of 0.1 Å / s on SiO with a size of 2 inches 2 / Si substrate deposited 0.6nmPt film.

[0048] (2) Put the selenium powder into the alumina boat and place it 25 cm upstream from the center of the tube furnace, and the SiO2 that has deposited the Pt film 2 The / Si substrate is placed in the center of the tube furnace, the carrier gas is argon, and the gas flow rate is 40 sccm. Before heating, vacuumize the tube furnace cavity to 50kPa with a mechanical pump. The temperature was raised to 200°C within 20 minutes and kept for 2 hours, then the temperature was raised to 550°C within 50 minutes and the ...

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Abstract

The invention relates to a wafer-level noble metal monatomic layer catalyst, the chemical formula of the catalyst is MXx, x = 1.1-1.4; wherein M is any one of precious metals such as platinum, palladium, iridium, osmium, ruthenium and rhodium; x is sulfur group element sulfur or selenium. Meanwhile, the invention also discloses a preparation method and application of the catalyst. According to the method, the atom utilization rate and the loading capacity are effectively improved, compared with a monatomic catalyst which only disperses a small amount of active sites, the active sites can be provided to the maximum extent on the monatomic layer scale, and excellent catalytic activity is shown in hydrogen production through water splitting.

Description

technical field [0001] The invention relates to the field of new material energy, in particular to a wafer-level noble metal monoatomic layer catalyst and its preparation and application. Background technique [0002] Precious metal catalysts such as platinum (Pt) and palladium (Pd) are often used in commercial water splitting for hydrogen production due to their high activity, but their scarcity, high cost, and poor durability seriously hinder the large-scale application of noble metal catalysts. In order to reduce costs, noble metal catalysts are designed into various nanostructures such as nanowires, nanoplates, and nanocages. However, these nanostructures have low atom utilization and fail to fully develop the catalytic performance of noble metals. At the same time, people began to improve the activity of catalysts on the atomic scale, supported single atoms of noble metals on various substrates, and developed Pt / graphene, Pt / Al 2 o 3 , Pt / MoS 2 , Pt / Silica, Pt / SrTiO ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B1/04C25B11/091
CPCC25B1/04C25B11/091Y02E60/36
Inventor 何勇民夏杭
Owner HUNAN UNIV