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Light absorption material, preparation method thereof and photovoltaic cell

A technology of light-absorbing materials and photovoltaic cells, which is applied in the field of its preparation and light-absorbing materials, can solve problems such as the complexity of the preparation process, achieve the effects of simple preparation procedures, breaking through the efficiency limit, and broadening the spectral absorption range

Active Publication Date: 2022-04-22
HUANENG NEW ENERGY CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The laminated battery is to connect the wide-bandgap absorbing layer and the narrow-bandgap absorbing layer through the intermediate composite layer, and the preparation process is complicated.

Method used

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  • Light absorption material, preparation method thereof and photovoltaic cell
  • Light absorption material, preparation method thereof and photovoltaic cell
  • Light absorption material, preparation method thereof and photovoltaic cell

Examples

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preparation example Construction

[0035] The present invention also provides a method for preparing the above-mentioned light-absorbing material, comprising: soaking antimony selenide nanorods in ABX doped with N-type dopant materials 3 In the perovskite precursor solution, a light absorbing layer is obtained; the ABX doped with an N-type dopant material 3 The perovskite precursor solution is prepared according to the following method: one or more of MAX, FAX and CsX and, BX 2 Mix with N-type dopant material in a solvent to obtain ABX doped with N-type dopant material 3 Perovskite precursor solution; wherein X is one or more of Cl, Br and I; the N-type dopant material includes Bi 3+ , Sb 3+ , Fe 3+ with Al 3+ one or more of.

[0036] Among them, the present invention has no special limitation on the sources of all raw materials, which can be commercially available.

[0037] The antimony selenide nanorods are the same as described above, and will not be described in detail here; in the present invention, ...

Embodiment 1

[0056] 1) Select a stainless steel foil (1) with a thickness of 0.2mm, grind and polish, and then use deionized water, absolute ethanol and acetone to perform ultrasonic cleaning, and then N 2 blow dry;

[0057] 2) Preparation of the metal back electrode (2): Deposit Mo on the stainless steel foil (1) as the back electrode of the battery by magnetron sputtering, with a deposition thickness of 800 nm;

[0058] 3) Add 600mg of Se powder and 50mg of hydrazine hydrate to 100mL of NaOH solution with a pH value of 8, stir for 15min, add 1.16g of antimony chloride, and transfer the mixed solution to the reaction kettle with the base of the composite back electrode In 150 ℃ reaction for 24h to get the substrate composited with antimony selenide nanorods.

[0059] 4) Prepare N-type perovskite material solution, wherein the solute is SnI 2 , PbI 2 , CsBr, FAI, wherein the molar ratio of CsBr to FAI is 0.15:0.85, SnI 2 with PbI 2 The molar ratio is 0.3:0.7. (SnI 2 +PbI 2 ) to (Cs...

Embodiment 2

[0068] 1) Select FTO-coated glass (1) with a thickness of 2mm, and use deionized water, absolute ethanol and acetone to carry out ultrasonic cleaning, and then N 2 Stream dry.

[0069] 2) Preparation of the metal back electrode (2): Deposit Mo on the stainless steel foil (1) as the back electrode of the battery by magnetron sputtering, with a deposition thickness of 800 nm;

[0070] 3) Add 600mg of Se powder and 50mg of hydrazine hydrate to 100mL of NaOH solution with a pH value of 8, stir for 15min, add 1.16g of antimony chloride, and transfer the mixed solution to the reaction kettle with the base of the composite back electrode In the reaction at 150℃ for 24h, antimony selenide nanorods were obtained.

[0071] 4) Prepare N-type perovskite material solution, wherein the solute is SnI 2 , PbI 2 , MAI, FAI, wherein the molar ratio of MAI to FAI is 0.05:0.85, SnI 2 with PbI 2 The molar ratio is (0.2 ~ 0.5): (0.5 ~ 0.8). (SnI 2 +PbI 2 ) to (MAI+FAI) in a molar ratio of 1...

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Abstract

The invention provides a light absorption material. The light absorption material comprises an antimony selenide nanorod and an N-type perovskite absorption layer wrapping or partially wrapping the tellurium selenide nanorod; the material of the N-type perovskite absorption layer is ABX3 doped with an N-type doping material; wherein A is one or more of MA, FA, Cs and PEA; the MA is CH3NH3; the FA is NH2CHNH2, and the FA is PEA is C8H9NH3, and PEA is B is Pb and / or Sn; x is one or more of Cl, Br and I; the N-type doping material comprises one or more of Bi < 3 + >, Sb < 3 + >, Fe < 3 + > and Al < 3 + >. Compared with the prior art, the antimony selenide nanorod is wrapped by the perovskite material layer to form the core-shell structure, and materials with different band gaps are combined, so that the utilization range of solar spectrum can be widened, the current density can be improved, the efficiency limit of single-layer perovskite can be broken through, and the photoelectric conversion efficiency can be improved.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic cells, and in particular relates to a light-absorbing material, a preparation method thereof and a photovoltaic cell. Background technique [0002] Photovoltaic cells, also known as solar cells, can convert solar energy into electrical energy through photoelectric conversion, which can be directly used by people and has attracted much attention. According to the development of solar cells and the light-absorbing layer materials used, solar cells can be divided into three categories. The first type is silicon-based solar cells, including monocrystalline silicon, polycrystalline silicon solar cells, amorphous silicon thin-film solar cells, and silicon stacked solar cells; the second type is compound solar cells, including copper indium gallium selenide (CIGS), tellurium Cadmium (CdTe), gallium arsenide (GaAs) and perovskite solar cells; the third category is new solar cells, including dye-sens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48B82Y40/00B82Y30/00B82Y15/00
CPCB82Y15/00B82Y30/00B82Y40/00H10K85/30H10K30/15H10K2102/00Y02E10/549
Inventor 李梦洁赵志国赵东明秦校军丁坤刘家梁熊继光
Owner HUANENG NEW ENERGY CO LTD
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