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InSb-APD intermediate infrared detector with SACM structure and preparation method of InSb-APD intermediate infrared detector

An infrared detector, N-type technology, used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of device dark current increase, high dark current, and narrow band gap material band-to-band tunneling, etc. Achieve the effect of suppressing diffusion current and high gain

Pending Publication Date: 2022-05-24
SHAANXI SCI TECH UNIV
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Problems solved by technology

The problems of this detector are: (1) its structure is essentially an InSb homogeneous structure, so Auger recombination is not suppressed outside the active region, and the high-concentration impurities in the heavily doped N and P regions will cause Serious Schottky-Reed-Hall Composite
The dark current of the device increases at room temperature, and the performance is affected
(2) Compared with the magnetron sputtering method, the molecular beam epitaxy manufacturing method adopted is more expensive, which is not conducive to large-scale industrial production
The shortcomings of the designed nBn structure In addition to the above-mentioned shortcomings of the homogeneous structure, the relatively high dark current generated under the action of high electric field and the narrow band gap of the material itself can suppress the recombination mechanism through the low working environment temperature
Under high electric field conditions, narrow bandgap materials are also prone to band-to-band tunneling, and this phenomenon cannot be suppressed by cooling
Therefore, the effect of tunneling current on device performance cannot be controlled when working at high temperature

Method used

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  • InSb-APD intermediate infrared detector with SACM structure and preparation method of InSb-APD intermediate infrared detector
  • InSb-APD intermediate infrared detector with SACM structure and preparation method of InSb-APD intermediate infrared detector
  • InSb-APD intermediate infrared detector with SACM structure and preparation method of InSb-APD intermediate infrared detector

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preparation example Construction

[0054] The preparation method of the SACM structure InSb-APD mid-infrared detector of the present invention, the specific steps are as follows:

[0055] The N-type InP single wafer was selected as the substrate as the N-type InP substrate 1. After cutting, the substrates were successively prepared on the surface-treated substrates such as ultrasonic cleaning with acetone, anhydrous ethanol and deionized water, and drying at 100 °C in an oven. Floor. The fabrication of the device includes the following steps:

[0056] Step 1, preparation of N-type InP buffer layer 2;

[0057] At room temperature, using InP target, donor dopant. On the N-type InP substrate 1, a magnetron sputtering method is used to deposit an N-type InP buffer layer 2 with a thickness of 0.5 μm at room temperature;

[0058] Step 2, preparation of intrinsic InSb multiplication layer;

[0059] At room temperature, using an InSb target material, a magnetron sputtering method is used to deposit a 3 μm thick uni...

Embodiment

[0076] An N-type InP single wafer was selected as the substrate. After cutting, each layer was prepared sequentially on the substrate after surface treatment such as ultrasonic cleaning with acetone, anhydrous ethanol and deionized water, and drying at 100 °C in an oven. The fabrication of the device includes the following steps:

[0077] Step 1, preparation of N-type InP buffer layer 1;

[0078] At room temperature, an InP target was used, and the dopant was Te. On the N-type InP substrate 1, a magnetron sputtering method is used to deposit an N-type InP buffer layer 2 with a thickness of 0.5 μm at room temperature;

[0079] Step 2, preparation of intrinsic InSb multiplication layer;

[0080] At room temperature, using an InSb target material, a magnetron sputtering method is used to deposit a 3 μm thick unintentionally doped InSb multiplication layer 4 on the basis of the N-type InP buffer layer 2 obtained in step 1;

[0081] Step 3, preparation of P-type InSb charge laye...

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Abstract

The invention discloses an InSb-APD intermediate infrared detector with an SACM structure. The InSb-APD intermediate infrared detector comprises an N-type InP substrate, an N-type InP buffer layer, an unintentionally doped InSb multiplication layer, a P-type InSb charge layer, a P-type InSb absorption layer and a P-type GaSb contact layer from bottom to top. An upper electrode layer is arranged above the P-type GaSb contact layer, and a lower electrode layer is arranged above the N-type InP buffer layer; and the passivation layer covers the side surface of the detector. The invention also relates to a preparation method of the detector. Semiconductor materials with wide forbidden bands are used as the upper contact layer and the lower contact layer, a double-heterojunction structure is formed, and diffusion current is restrained.

Description

technical field [0001] The invention belongs to the technical field of electromagnetic compatibility of switching power supply systems, relates to an InSb-APD mid-infrared detector with SACM structure, and also relates to a preparation method of the infrared detector. Background technique [0002] With the increasing demand for advanced infrared detection technology, after decades of research and rapid development, mid-wavelength infrared (MWIR, 3-5μm) detectors are used in important applications such as remote sensing, heat tracking, gas monitoring, and space imaging. field. At present, the widely used materials and structures in MWIR detectors mainly include mercury cadmium telluride (HgCdTe, MCT), quantum wells and quantum dots, indium antimonide (InSb) focal plane array detectors, antimony-based detectors represented by InAs-GaSb Type II superlattice focal plane array detector. However, in order to reduce the dark current and improve the signal-to-noise ratio, these sy...

Claims

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Application Information

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IPC IPC(8): H01L31/107H01L31/0304H01L31/18C23C14/35C23C14/06C23C14/10C23C14/24C23C14/04
CPCH01L31/1075H01L31/0304H01L31/184C23C14/352C23C14/0617C23C14/10C23C14/24C23C14/042Y02P70/50
Inventor 叶伟萧生
Owner SHAANXI SCI TECH UNIV
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