Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Forming method of high-thermal-conductivity silicon nitride substrate

A technology of silicon nitride substrate and forming method, which is applied in the fields of ceramic forming machine, chemical industry, sustainable manufacturing/processing, etc. It can solve the problems of easy cracking and deformation of the green body, endangering human health, low density of the green body, etc., and achieves dryness The effect of short time, improved product quality and high strength

Inactive Publication Date: 2022-05-27
天津硕科科技有限公司
View PDF9 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although after decades of development, tape casting technology has been applied to industrial production, there are still many problems, such as the use of certain toxic organic solvents (benzene, toluene, xylene, acetone, methyl ethyl ketone, etc.) are more toxic, High production cost, unfriendly to the environment and harmful to health; the introduction of a large amount of organic matter in the slurry leads to low density of the green body, and the green body is easy to crack and deform during the debinding process; the ceramic powder settles during the drying process, and the upper and lower surfaces of the green body A density gradient is formed, which can lead to cracks, pits, peeling, etc. on the upper surface

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A method for forming a silicon nitride substrate with high thermal conductivity, the forming process steps are as follows:

[0037] S1: Dosing and ball milling: Add organic monomers and crosslinking agents to solvents to prepare a premixed solution, then mix the premixed solution, dispersant, silicon nitride and auxiliary ceramic powders for ball milling; the organic monomers are acrylamide, formazan Acrylamide, sorbitol polyglycidyl ether or Haiyin epoxy resin, etc., the amount of organic monomer added is 1-10% of the weight of silicon nitride powder; the crosslinking agent is methylbisacrylamide, and the solvent is ethanol, Ethylene glycol, propanol or isopropanol, etc., the mass ratio of organic monomer to crosslinking agent is 5:1-30:1; the dispersant is polyammonium methacrylate, PEI, phosphate ester or ammonium polyacrylate, etc. The amount of dispersant added is 0.1%-2.5% of the weight of silicon nitride powder; the ball-to-material ratio in the ball mill tank is...

Embodiment 2

[0044] Add 5g of acrylamide and 0.5g of N,N'-methylenebisacrylamide to 80mL of absolute ethanol to make a premix, then add 3g of dispersant PEI and 120g of silicon nitride and auxiliary ceramic powder, and ball mill for 10h . Add 6 g of plasticizer glycerin, and ball mill again for 10 h to obtain gel casting slurry. Add 0.25 g of initiator ammonium persulfate to the slurry, vacuum degassing for 25 minutes at a stirring speed of 50 rpm, cast the gel on a casting machine at 50 ° C, the speed of the casting belt is 1 m / min, and then solidify for 40 minutes . Drying for 2 hours at a temperature of 30° C. to obtain a green sheet with a thickness of 0.4 mm to 1.2 mm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a forming method of a high-thermal-conductivity silicon nitride substrate, and the forming process comprises the following steps: S1, burdening and ball milling: adding an organic monomer and a cross-linking agent into a solvent to prepare a premixed solution, and then mixing the premixed solution, a dispersing agent, silicon nitride and auxiliary ceramic powder for ball milling; and S2, adding a plasticizer to increase the flexibility of the silicon nitride sheet after tape casting. Then carrying out secondary ball milling, wherein the ball milling time is 4-30 hours; s3, vacuum defoaming: performing vacuum defoaming on the slurry obtained by secondary ball milling, and meanwhile, adding an initiator and stirring; s4, gel tape casting: carrying out tape casting operation on the slurry obtained by vacuum defoaming; and S5, drying the thin sheets, namely drying the thin sheets with certain strength and toughness after being cured for a certain time. According to the preparation method, a gel and tape casting combined technology is adopted, the advantages of two types of forming are integrated, the production cost is reduced, the environmental pollution is reduced, and the preparation of the high-performance silicon nitride ceramic substrate is realized.

Description

technical field [0001] The invention relates to the technical field of ceramic molding, in particular to a molding method of a silicon nitride substrate with high thermal conductivity. Background technique [0002] Silicon nitride ceramics have the advantages of high thermal conductivity, high dielectric strength, and matching the thermal expansion coefficient of Si, SiC, GaN, etc., and become ideal heat dissipation and packaging materials for a new generation of large-scale integrated circuits, semiconductor module circuits, and high-power devices. . [0003] At present, the main method for preparing silicon nitride ceramic substrates is tape casting, and most of them are organic solvent tape casting. Although after decades of development, tape casting technology has been applied to industrial production, there are still many problems, such as the use of certain toxic organic solvents (benzene, toluene, xylene, acetone, methyl ethyl ketone, etc.) are more toxic, High prod...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/622C04B35/626C04B35/632C04B35/634B28B1/29
CPCC04B35/584C04B35/622C04B35/6263C04B35/632C04B35/63444C04B35/63452C04B35/63448B28B1/29C04B2235/3206C04B2235/3225C04B2235/3224C04B2235/3227C04B2235/3213C04B2235/445Y02P20/10
Inventor 邹景良徐鹏庄新江
Owner 天津硕科科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products