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Method for preparing negative photoconductive solar blind detector by using beta-phase gallium oxide crystal

A gallium oxide and photoconductive technology, applied in semiconductor devices, circuits, electrical components, etc., can solve problems such as few research opportunities, controversial physical mechanisms, and weak research theoretical foundations, and achieve fast response, high negative response, and performance excellent effect

Pending Publication Date: 2022-05-27
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Existing reports have shown that negative photoconductivity can only be observed in a few material systems, so there are few research opportunities, the theoretical basis for research is weak, and the physical mechanism is still controversial.

Method used

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  • Method for preparing negative photoconductive solar blind detector by using beta-phase gallium oxide crystal
  • Method for preparing negative photoconductive solar blind detector by using beta-phase gallium oxide crystal
  • Method for preparing negative photoconductive solar blind detector by using beta-phase gallium oxide crystal

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Embodiment 1

[0060] A method for preparing a negative photoconductive solar-blind detector using beta-phase gallium oxide crystals, comprising the following steps:

[0061] (1) Preparation of n-type doped gallium oxide substrate: n-type doped Ga oxide by mechanical lift-off 2 O 3 Atomic-level flat and clean surface is obtained, and a gallium oxide wafer is obtained by peeling off mechanically; the electron doping concentration of the gallium oxide wafer is 1×10 18 -5×10 19 cm -3 ; The length of the gallium oxide wafer is 2-4cm, the width is 1-2cm, and the thickness is 10-150μm; the material of the n-type doped gallium oxide substrate is Si-doped gallium oxide;

[0062] (2) preparing the negative photoconductive solar-blind detector by successively preparing the gallium oxide wafer obtained in the cleaning step (1), defining the electrode pattern by photolithography, and growing the electrode;

[0063] The definition of electrode patterns by photolithography refers to: preparing electro...

Embodiment 2

[0083] A method for preparing a negative photoconductive solar-blind detector using beta-phase gallium oxide crystal according to Embodiment 1, the difference is:

[0084] The electron doping concentration of the gallium oxide wafer is 1×10 18 cm -3 . The gallium oxide wafer had a length of 4 cm, a width of 2 mm, and a thickness of 100 μm. An interdigitated electrode pattern was prepared on the obtained gallium oxide wafer.

[0085] The gallium oxide wafer obtained in the cleaning step (1) refers to: ultrasonic cleaning with 40W power using Dikon cleaning agent for 5 minutes, deionized water 40W power ultrasonic cleaning for 10 minutes, acetone 40W power ultrasonic cleaning for 5 minutes, ethanol 40W power ultrasonic cleaning for 5 minutes, nitrogen gas Reserve after drying.

[0086] Deposition of PdO on Gallium Oxide Wafers X , the process parameters in magnetron sputtering are as follows:

[0087] The sputtering power is 40W;

[0088] The working air pressure is 3.46m...

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Abstract

The invention relates to a method for preparing a negative photoconductive solar blind detector by using a beta-phase gallium oxide crystal, which comprises the following steps of: (1) preparing an n-type doped gallium oxide substrate: mechanically stripping the n-type doped Ga2O3 crystal to obtain an atomic-scale flat clean surface and obtain a gallium oxide wafer; (2) sequentially cleaning the gallium oxide wafer obtained in the step (1), photoetching and defining an electrode pattern, and growing an electrode to prepare the negative photoconductive solar blind detector; according to the invention, the negative photoconduction phenomenon of the ultraviolet band is observed in the gallium oxide photodetector for the first time. The negative photoconductive performance of the device is excellent, under the irradiation of 254 nm light, the device shows high negative response, the responsivity reaches 14.6 A / W, the response speed is high, and the response to a periodic on / off photoswitch is stable and reversible. The negative photoconduction characteristic of the gallium oxide crystal provides new possibility for the application of the gallium oxide crystal to photoelectric devices.

Description

technical field [0001] The invention relates to a method for preparing a negative photoconductive solar blind detector by utilizing beta-phase gallium oxide crystal, and belongs to the technical field of semiconductors. Background technique [0002] The photoconductive effect refers to the change in the conductivity of a semiconductor after exposure to light. The photoconductive effect has important application value in biomedical monitoring, environmental detection, information transmission and processing, space exploration, wearable electronics and other fields. At present, the research on the photoconductive effect focuses on the positive photoconductive effect, and there are very few studies on the negative photoconductive effect. In addition to the application prospects of the negative photoconductivity in the aforementioned fields, the negative photoconductive device can also be combined with the positive photoconductive device to form a photoelectric logic gate to re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224C23C14/08C23C14/18
CPCH01L31/1892H01L31/022425C23C14/18C23C14/083Y02P70/50
Inventor 辛倩颜世琪宋爱民
Owner SHANDONG UNIV
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