Silicon-based gallium nitride high-power radio frequency device based on gold-free process and preparation method thereof

Abstract

The invention discloses a silicon-based gallium nitride high-power radio frequency device based on a gold-free process and a preparation method thereof, and the preparation method comprises the steps: obtaining and cleaning an epitaxial substrate which sequentially comprises a substrate, a nucleating layer, a buffer layer and a barrier layer from bottom to top; etching a table surface from the edge of the active region of the epitaxial substrate to the buffer layer to form active region isolation; etching a patterned array groove in the barrier layer, and depositing alloy ohmic metal in the patterned array groove to form an ohmic pre-deposition layer; forming a source electrode and a drain electrode on the barrier layer, wherein the source electrode and the drain electrode are located above the ohmic pre-deposition layer; forming a passivation layer on the barrier layer, the source electrode and the drain electrode; forming a trapezoidal gate electrode on the barrier layer between the source electrode and the drain electrode; and manufacturing a back through hole, and forming a source electrode interconnection layer and a passivation layer in the back through hole. The power device adopts the ohmic pre-deposition layer and the grid electrode with the inclined field plate, so that the contact resistance is reduced, and the channel electric field distribution is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a silicon-based gallium nitride high-power radio frequency device based on a gold-free process and a preparation method thereof. The silicon-based gallium nitride high-power radio frequency device can be used for 5G base station systems, satellite navigation, in the radar system. Background technique [0002] Due to the large band gap, high breakdown field strength, and the ability to obtain a high-concentration two-dimensional electron gas channel by forming a heterojunction with AlGaN, GaN has a high breakdown voltage and low on-resistance that exceed the limits of Si and SiC. Therefore, AlGaN / GaN HEMTs (High Electron Mobility Transistor, high electron mobility transistors) have great advantages in power switching applications. Due to the poor thermal conductivity of sapphire and the high cost of SiC, the power application of high-power AlGaN / GaN HEMTs bas...

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Problems solved by technology

[0003] At present, at home and abroad, the gold-containing process is widely used in the device process to make SiC-based GaN devices, which can achieve higher power. These methods have the following problems: (1) The cost of a single SiC-based GaN is high, and the wafer Small size leads to low productivity and low tape-out efficiency; (2) SiC-based GaN adopts traditional gold-containing process and cannot be compatible with Si-based CMOS process, and cannot be heterogeneously integrated with Si-based CMOS control components

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