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Indium tungsten oxide target material and preparation method thereof

A technology of tungsten oxide and target material, which is applied in the field of indium tungsten oxide target material and its preparation, and can solve problems such as protruding objects, low density of IWO target material, powder falling, etc.

Pending Publication Date: 2022-07-05
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the IWO target prepared by this method has a low density and is a non-dense body. It is easy to produce protrusions during use, and there is a problem of powder falling, which poses a great hidden danger to continuous production.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0025] The invention provides a preparation method of an indium tungsten oxide target, comprising the following steps:

[0026] (1) According to the stoichiometric ratio, indium oxide and tungsten oxide are mixed and calcined in an oxygen atmosphere to obtain In 6 WO 12 ;

[0027] (2) the In obtained by the step (1) 6 WO 12 Mix with indium oxide, water, dispersant and binder to obtain IWO slurry;

[0028] (3) pressure grouting the IWO slurry obtained in the step (2) to obtain an IWO china;

[0029] (4) Degreasing the IWO green body obtained in the step (3) and sintering at a step temperature change in sequence to obtain an indium tungsten oxide target.

[0030] Unless otherwise specified, the source of each component is not particularly limited in the present invention, and commercially available products well known to those skilled in the art can be used.

[0031] In the present invention, indium oxide and tungsten oxide are mixed in an oxygen atmosphere according to a ...

Embodiment 1

[0072] Weigh the nano-scale (20-200nm) indium oxide powder and tungsten oxide powder in a molar ratio of 3:1, the total mass of the powder is 500g, and then mix them uniformly through a high-efficiency mixer, and calcining them at a temperature of 800 ℃, the atmosphere is high-purity oxygen, calcined for 10h to obtain the secondary phase In 6 WO 12 ;

[0073] Then through jet mill pulverization and classification to obtain In 6 WO 12 Powder, with nanoscale In 2 O 3 Powder by mass ratio In 6 WO 12 / In 2 O 3 = 1 wt% for weighing and proportioning for proportioning and weighing 1000g, in which In 2 O 3 Powder 990g, In 6 WO 12 10g powder, add 200g deionized water accounting for 20% of the total mass of the powder to the mixed powder, accounting for 1.2% of the total mass of the powder ammonium polyacrylate (NH 4 PAA) 12g, accounting for 0.5% polyvinyl alcohol (PVA) 5g of the total mass of the powder, to prepare an IWO slurry with a solid content of 82.17% and a viscosit...

Embodiment 2

[0078] Weigh the nano-scale (20-200nm) tungsten oxide powder and indium oxide powder in a molar ratio of 3:1, the total mass of the powder is 500g, and then mix them uniformly through a high-efficiency mixer, and calcining them at a temperature of 800℃, the atmosphere is high-purity oxygen, calcined for 10h to obtain the secondary phase In 6 WO 12 ;

[0079] After jet mill pulverization and classification treatment, In 6 WO 12 Powder, with nanoscale In 2 O 3 Powder by mass ratio In 6 WO 12 / In 2 O 3 = 3wt% for proportioning and weighing 1000g, in which In 2 O 3 Powder 970g, In 6 WO 12 Powder 30g, add 200g deionized water accounting for 20% of the total mass of the powder to the mixed powder, accounting for 1.2% of the total mass of the powder ammonium polyacrylate (NH 4 PAA) 12g, accounting for 0.5% polyvinyl alcohol (PVA) 5g of the total mass of the powder, to prepare an IWO slurry with a solid content of 82.17% and a viscosity of 90mPa·s;

[0080] The prepared ...

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Abstract

The invention provides an indium tungsten oxide target material and a preparation method thereof, and belongs to the technical field of photoelectric materials. The preparation method comprises the following steps: mixing indium oxide and tungsten oxide according to a stoichiometric ratio, and calcining to enable the indium oxide and the tungsten oxide to be subjected to complete solid-phase reaction to obtain In6WO12; the generation of oxygen vacancies can be inhibited by calcining in an oxygen atmosphere, so that the density of the product is improved; in6WO12 is mixed with indium oxide, water, a dispersing agent and a binding agent, then pressure grouting is conducted, the dispersion degree of the In6WO12 phase in the target material is improved, and meanwhile the compactness of the target material is further improved; and a dispersing agent and a binding agent are removed through degreasing treatment, and step variable-temperature sintering is combined, so that the obtained target material is uniform in structure refinement and high in density. Experimental results of the embodiment show that the relative density of the indium tungsten oxide target material prepared by the preparation method provided by the invention is 98.1-99.6%.

Description

technical field [0001] The invention relates to the technical field of optoelectronic materials, in particular to an indium tungsten oxide target and a preparation method thereof. Background technique [0002] Transparent conductive oxide films (TCOs) are a class of special functional materials with good optical properties and electrical conductivity, which are widely used in electronic screens, touch screen panels, light emitting diodes (LEDs) and solar cells. Such materials are easy to produce and can be prepared using techniques such as chemical vapor deposition, magnetron sputtering, and spray pyrolysis. The most commonly used TCO today is tin-doped indium oxide (indium tin oxide or ITO). [0003] Compared with tin-doped indium oxide (ITO) and aluminum-doped zinc oxide (AZO) material systems, WO 3 Doping In 2 O 3 The IWO film prepared by the material system has higher carrier mobility, high light transmittance in visible light and near-infrared wavelengths, and bette...

Claims

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Application Information

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IPC IPC(8): C04B35/01C04B35/622C04B35/638C23C14/08C23C14/34
CPCC04B35/01C04B35/622C04B35/638C23C14/3414C23C14/086C04B2235/3258C04B2235/6567C04B2235/6562C04B2235/661C04B2235/77C04B2235/6565Y02P70/50
Inventor 刘洋左仲恒孙本双曾学云王之君刘苗陈杰舒永春何季麟
Owner ZHENGZHOU UNIV
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