Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method for low-temperature deposition of Ga2O3 film on self-sustaining diamond thick film substrate

A diamond thick film and substrate technology, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of high preparation temperature and high temperature resistance of polyimide, and achieve simple preparation process, The effect of excellent heat resistance and unique use characteristics

Pending Publication Date: 2022-07-26
SHENYANG INST OF ENG
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because polyimide (PI) cannot withstand high temperature, the traditional MOCVD method has a high preparation temperature, and the current ECR-PEMOCVD technology and related equipment are not used to produce Ga 2 o 3 thin film, so how to use the advantages of ECR-PEMOCVD technology to produce Ga 2 o 3 Thin film is the difficulty of current research

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for low-temperature deposition of Ga2O3 film on self-sustaining diamond thick film substrate
  • Preparation method for low-temperature deposition of Ga2O3 film on self-sustaining diamond thick film substrate
  • Preparation method for low-temperature deposition of Ga2O3 film on self-sustaining diamond thick film substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] After cleaning the self-sustaining diamond substrate with acetone, ethanol and deionized water with ultrasonic waves for 10 minutes in turn, it was dried with nitrogen and sent to the reaction chamber of the ECR-PEMOCVD system; the reaction chamber was evacuated to 6.0×10 -4 Pa, the self-sustaining diamond substrate was heated to 100°C, and trimethylgallium (TMGa) and oxygen (O) carried by argon were introduced into the reaction chamber. 2 ), where TMGa and O 2 The flow ratio of the reaction source is controlled to be 1:20, controlled by the mass flowmeter, and the flow parameters are 2sccm and 50sccm respectively; the total pressure of the control gas is 2.0Pa; the electron cyclotron resonance frequency is 650W, and the reaction is performed for 120min to obtain a self-sustaining diamond substrate. Ga 2 O 3 film material.

[0027] After the experiment, the mobility and carrier concentration of the film were tested and analyzed by Hall test equipment. The results a...

Embodiment 2

[0031] After cleaning the self-supporting diamond substrate with acetone, ethanol and deionized water with ultrasonic wave for 10 minutes, blow dry with nitrogen and send it to the reaction chamber of the ECR-PEMOCVD system; the reaction chamber is evacuated to 6.0×10 -4 Pa, the self-sustaining diamond substrate was heated to room temperature, and trimethylgallium (TMGa), oxygen (O) carried by argon were introduced into the reaction chamber 2 ), where TMGa and O 2 The flow ratio of the reaction source is controlled to be 1:25, controlled by the mass flow meter, and the flow parameters are 3 sccm and 75 sccm respectively; the total pressure of the control gas is 1.0 Pa; the electron cyclotron resonance frequency is 650 W, and the reaction is performed for 60 min to obtain a self-sustaining diamond substrate. Ga 2 O 3 film material.

[0032] After the experiment, the mobility and carrier concentration of the film were tested and analyzed by Hall test equipment. The results ...

Embodiment 3

[0036] After cleaning the self-supporting diamond substrate with acetone, ethanol and deionized water with ultrasonic wave for 10 minutes, blow dry with nitrogen and send it to the reaction chamber of the ECR-PEMOCVD system; the reaction chamber is evacuated to 6.0×10 -4 Pa, the self-supporting diamond substrate was heated to 150°C, and trimethylgallium (TMGa) and oxygen (O) carried by argon were introduced into the reaction chamber. 2 ), where TMGa and O 2 The flow ratio of the reaction source is controlled to be 1:16, controlled by the mass flowmeter, and the flow parameters are 5sccm and 80sccm respectively; the total pressure of the control gas is 2.0Pa; the electron cyclotron resonance frequency is 650W, the reaction is 200min, and the self-sustaining diamond substrate is obtained. Ga 2 O 3 film material.

[0037] After the experiment, the mobility and carrier concentration of the film were tested and analyzed by Hall test equipment. The results are shown in Table 3,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method for low-temperature deposition of a Ga2O3 thin film on a self-sustaining diamond thick film substrate, and belongs to the technical field of thin film material manufacturing. The method comprises the following steps: ultrasonically cleaning a self-supporting diamond thick film substrate through acetone, ethanol and deionized water in sequence for 8-12 minutes, blow-drying with nitrogen, and feeding into a reaction chamber; an ECR-PEMOCVD system is adopted, a reaction chamber is vacuumized to 6.0 * 10 <-4 > Pa, the polyimide substrate is heated to the temperature ranging from the room temperature to 200 DEG C, trimethyl gallium carried by argon and oxygen are introduced into the reaction chamber, the flow ratio of the trimethyl gallium to the oxygen is (2-5): (50-80), and the total pressure intensity of the gas is controlled to be 1.0-3.0 Pa; the electron cyclotron resonance frequency is 500-800 W, the preparation time is 60-240 min, and the Ga2O3 photoelectric film on the self-sustaining diamond substrate is obtained. The high-performance Ga2O3 thin film material can be prepared at a low temperature, and the preparation process is simple.

Description

technical field [0001] The invention belongs to the technical field of manufacturing photoelectric thin film materials, in particular to an ECR-PEMOCVD system for depositing Ga at low temperature on a self-sustaining diamond thick film substrate 2 O 3 Method for preparing thin films. Background technique [0002] With its excellent thermal conductivity and excellent heat resistance, diamond substrates are especially suitable for the fabrication of high-power high-frequency filter devices. In recent years, high-quality diamond films can be deposited on silicon or metal substrates by using high-temperature pyrolysis hot-wire chemical vapor deposition (CVD) technology. And the CVD technology has been developed relatively mature. Therefore, diamond can be used as a substrate for high-power high-frequency filter devices. Gallium oxide (Ga 2 O 3 ) material has a band gap width of 4.9eV, which is a wide bandgap semiconductor material. And it has a variety of structures, amon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/511C23C16/27
CPCC23C16/40C23C16/511C23C16/271
Inventor 张东赵琰宋世巍李昱材王健王晗唐坚许琪
Owner SHENYANG INST OF ENG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com