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Low-dielectric constant insulating media monox thin-film and preparing method thereof

A technology of low dielectric constant and insulating medium, which is used in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of unadjustable mechanical strength, decreased mechanical properties of thin films, and difficult to control the pore size of thin films. The effect of stable electrical properties and increased interconnect delay

Inactive Publication Date: 2006-09-20
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the low dielectric constant insulating dielectric films that have been researched more at home and abroad include fluorine-containing silicon oxide film (SiOF), polyimide film (PI), silicon sesquioxide film (SSQ), etc., but these products have production Disadvantages such as complex process, poor temperature resistance, corrosion to circuits, and poor adhesion to silicon wafers
The existing nanoporous silicon oxide film cannot participate in cross-linking due to the single pore template, which makes it difficult to control the pore size of the film, uneven distribution of micropores, unadjustable mechanical strength, and a serious decline in the mechanical properties of the film during annealing

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Embodiment 1: The low dielectric constant insulating dielectric silicon oxide film prepared by the present invention is made of materials with the following general formula:

[0023] SiO x R y

[0024] Wherein: x=1.1, y=1.8; R is a methyl group; the chemical bonds in the film are Si-O bonds, Si-C bonds and C-H bonds; the film contains nano-micropores with a diameter of 50 nanometers. The volume ratio is 20%; the thickness of the film is 200 nanometers; Si atom content (weight) 37% in the film, C atom content (weight) 33%, hydrogen atom content (weight) 7%, O atom content (weight) 23% .

[0025] The preparation method of above-mentioned film is:

[0026] 1. Add allyl polyethylene glycol ether (molecular weight 900) and trimethoxysilyl hydrogen under the catalysis of chloroplatinic acid to obtain single-terminal silsesquioxane polyethylene glycol ether with molecular weight of 1000 , as a porogenic template.

[0027] 2. Using the above-mentione...

Embodiment 2

[0028] Embodiment 2: The low dielectric constant insulating dielectric silicon oxide film prepared by the present invention is made of materials with the following general formula:

[0029] SiO x R y

[0030] Wherein: x=1.5, y=1; R is an ethyl group; the chemical bonds in the film are Si-O bonds, Si-C bonds and C-H bonds; the film contains nano-micropores with a diameter of 20 nanometers. The volume ratio is 50%; the thickness of the film is 300 nanometers; Si atom content (weight) 35% in the film, C atom content (weight) 30%, hydrogen atom content (weight) 5%, O atom content (weight) 30% .

[0031] The preparation method of the above-mentioned film is as follows: the single-terminal silsesquioxane polypropylene oxide ether with a molecular weight of 650, diethyldiethoxysilane and ethyl orthosilicate are used as raw materials. Wherein the ratio of diethyldiethoxysilane to tetraethylorthosilicate is 1:1, hydrolyzed under weak base catalysis in dimethylf...

Embodiment 3

[0033] The low dielectric constant insulating dielectric silicon oxide film prepared by the present invention is made of materials with the following general formula:

[0034] SiO x R y

[0035] Wherein: x=1.9, y=0.2; R is a phenyl group; the chemical bonds in the film are Si-O bonds, Si-C bonds and C-H bonds; the film contains nano-micropores with a diameter of 80 nanometers, and the micropores and film The volume ratio is 80%; the thickness of the film is 400 nanometers; in the film, the Si atom content (weight) is 38%, the C atom content (weight) is 20%, the hydrogen atom content (weight) is 1%, and the O atom content (weight) is 41%. .

[0036] The preparation method of the above-mentioned film is as follows: the single-terminal silsesquioxane polytetrahydrofuran ether with a molecular weight of 650, diphenyldimethoxysilane and methyl orthosilicate are used as raw materials. Wherein the ratio of diphenyldimethoxysilane to methyl orthosilicate is 1:...

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Abstract

The film is made of the material with the general formula of SiOxRy, whose comical bond is Si-O.Si-C.C-H; which contains Nanometer micropore. The producing process is as below. The siloxane organics is applied as template to produce the colloidal sol in the organic liquid, and paint the colloidal sol on the silicon wafer to form the film. The anneal temperature is around 200-600 deg.C and the heating up rate is about 5-20 deg.C per minute.

Description

1. Technical field [0001] The invention relates to a low dielectric constant insulating dielectric silicon oxide film and a preparation method thereof, which is used in the manufacture of integrated circuits. 2. Background technology [0002] With the rapid development of large-scale integrated circuits, when the feature size of integrated circuits is reduced to 180nm or less, interconnection parasitic resistance, delay caused by capacitance, crosstalk and energy consumption have become the development of high-speed, high-density, low-power consumption And the bottleneck problem that the multifunctional integrated circuit needs to solve. In large-scale integrated circuits, interlayer and interline dielectrics are replaced by low dielectric constant insulating dielectric films, which can effectively reduce interconnect parasitic capacitance, thereby reducing delay, crosstalk and energy consumption caused by capacitance. Therefore, many researchers have been exploring some lo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/316H01L21/473
Inventor 贾叙东袭锴余学海
Owner NANJING UNIV
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