Organocuprous precursors for chemical vapor deposition of copper film

An organic and cuprous technology, used in copper organic compounds, liquid chemical plating, gaseous chemical plating, etc., can solve the problems of poor copper film quality and difficult to handle solid precursors, and achieve high volatility and good thermal stability. sexual effect

Inactive Publication Date: 2001-04-04
POSTECH ACAD IND FOUND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Thus, the CVD method disclosed in U.S. Patent No. 5,098,516 suffers from the difficulty of handling solid precursors in its mass production system
Moreover, the copper

Method used

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  • Organocuprous precursors for chemical vapor deposition of copper film
  • Organocuprous precursors for chemical vapor deposition of copper film
  • Organocuprous precursors for chemical vapor deposition of copper film

Examples

Experimental program
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Example Embodiment

[0026] Example 1: Synthesis of (hfac)Cu(Ⅰ)(DMB)

[0027] Put 0.5g (3.5mmol) of Cu 2 O and 0.84g (7.0mmol) MgSO 4 Put into a Schlenk flask, and add 30ml of diethyl ether (the diethyl ether has been distilled by sodium benzophenone under argon atmosphere), and then slowly add 0.59g (7.0mmol) of 3,3-dimethyl-1 -Butene. The resulting reddish suspension was stirred for 1 hour and cooled to 0°C, and 1.46 g (7.0 mmol) of 1,1,1,5,5,5-hexafluoro-2,4 was slowly added thereto with a catheter -A solution of pentanedione (Hhfac) in diethyl ether. The resulting mixture was stirred at room temperature for 2 hours, and at the same time the color of the mixture changed to dark green. The resulting solution passed CELLITE TM The bed was filtered, and the solvent was removed therefrom under reduced pressure to obtain 1.74 g of the title compound as a dark green liquid (yield 70%). 1 H-NMR(CDCl 3 , Ppm) δ 6.12 (s, 1H), 5.38 (m, 1H), 4.30 (dd, 2H), 1.15 (s, 9H) 13 C-NMR(CDCl 3 , Ppm)δ177.83(q, CF 3 CO...

Example Embodiment

[0028] Example 2: Synthesis of (hfac)Cu(Ⅰ)(TBA)

[0029] Put 0.5g (3.5mmol) of Cu 2 O and 0.84g (7.0mmol) MgSO 4Put into a Schlenk flask, and add 30ml of diethyl ether (the diethyl ether has been distilled by sodium benzophenone under an argon atmosphere), and then slowly add 0.58g (7.0mmol) of 3,3-dimethyl-1 -Butyne. The resulting reddish suspension was stirred for 1 hour and cooled to 0°C, and 1.46 g (7.0 mmol) of 1,1,1,5,5,5-hexafluoro-2,4 was slowly added thereto with a catheter -A solution of pentanedione (Hhfac) in diethyl ether. The resulting mixture was stirred at room temperature for 2 hours, and at the same time the color of the mixture changed to yellow. The resulting solution passed CELLITE TM The bed was filtered, and the solvent was removed therefrom under reduced pressure to obtain 1.75 g of the title compound as a yellow solid (yield 73%). 1 H-NMR(CDCl 3 , Ppm)δ6.09(s, 1H), 4.25(s, 1H), 1.38(s, 9H) 13 C-NMR(C 6 D 6 , Ppm)δ178.57(q, CF 3 COCH), 116.52(q, CF 3 ), 105...

Example Embodiment

[0032] Example 3: Depositing a copper film on the substrate

[0033] The precursor of the present invention synthesized in Example 1 and (hfac)Cu (VTMS) and (hfac)Cu (ATMS) as prior art precursors were coated with TiN or SiO by the CVD method 2 Deposit a copper film on the substrate. Specifically, the compound was supplied in a diffuser maintained at 45°C, and its vapor was transported to the surface of the substrate set in a CVD chamber with a pressure of 0.3 mmHg in an argon gas flow with a flow rate of 50 sccm. The copper film deposition rate that depends on the substrate temperature is shown in Figure 4 in. Figure 4 The results prove that the precursor of the present invention forms a copper film at a rate that is about 5-6 times faster than that of the prior art precursor.

[0034] On the other hand, the resistivity of the film deposited using the precursor of the present invention depends on the temperature of the substrate, such as Figure 5 Shown. Can be from Figure 5 It ...

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Abstract

An organocuprous compound of formula (I) of the present invention can be conveniently used in a low-temperature CVD process for the mass production of a contaminant-free copper film having good thermal stability, wherein: R1, R2 and R3 are each independently a C1-8 alkoxy, aryl or aryloxy group, R4 and R5 are each independently hydrogen, fluorine, a CnF2n+1 or CnH2n+1 group, n being an integer in the range of 1 to 6, R6 is hydrogen, fluorine or C1-4 alkyl group, and m is 1 or 2, when m is 1, C*C represents CC, and when m is 2, C*C represents C=C.

Description

field of invention [0001] The invention relates to a novel organic cuprous precursor for chemical vapor deposition of high-purity copper film; and a method for preparing copper film using the precursor. Background of the invention [0002] So far, many metals, such as tungsten and aluminum, have been widely used as interconnect materials for many electronic devices such as semiconductors. However, aluminum interconnects (resistivity: about 2.7 μΩ·cm) tend to suffer from electromigration problems, while tungsten has a high resistivity problem (resistivity: about 5.4 μΩ·cm). Therefore, recent attempts have been made to use copper, which has high conductivity (resistivity: about 1.67 µΩ·cm) and resistance to electromigration, as an interconnection material in advanced devices such as large-scale semiconductor integrated circuits. [0003] Metal interconnects are typically formed by chemical vapor deposition (CVD) using metal-organic precursor compounds, whereas previously Cu f...

Claims

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Application Information

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IPC IPC(8): C23C18/08C07F1/08C23C16/18C23C18/38C23C24/08H01L21/28H01L21/285
CPCC07F1/08C23C16/18C23C18/38
Inventor 李时雨韩镐姜相宇
Owner POSTECH ACAD IND FOUND
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