Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organocuprous precursors for chemical vapor deposition of copper film

An organic and cuprous technology, used in copper organic compounds, liquid chemical plating, gaseous chemical plating, etc., can solve the problems of poor copper film quality and difficult to handle solid precursors, and achieve high volatility and good thermal stability. sexual effect

Inactive Publication Date: 2001-04-04
POSTECH ACAD IND FOUND
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus, the CVD method disclosed in U.S. Patent No. 5,098,516 suffers from the difficulty of handling solid precursors in its mass production system
Moreover, the copper film CVD method using, for example, (hfac)Cu(I)COD requires relatively high substrate temperatures above 150°C, and the resulting copper films are often of poor quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organocuprous precursors for chemical vapor deposition of copper film
  • Organocuprous precursors for chemical vapor deposition of copper film
  • Organocuprous precursors for chemical vapor deposition of copper film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1: the synthesis of (hfac) Cu (I) (DMB)

[0027] 0.5g (3.5mmol) of Cu 2 O and 0.84g (7.0mmol) of MgSO 4 Charge it into a Schlenk flask, and add 30 ml of diethyl ether (the diethyl ether has been distilled by sodium benzophenone under an argon atmosphere), and then slowly add 0.59 g (7.0 mmol) of 3,3-dimethyl-1 -butene. The resulting reddish suspension was stirred for 1 hour and cooled to 0 °C, to which 1.46 g (7.0 mmol) of 1,1,1,5,5,5-hexafluoro-2,4 - A solution of pentanedione (Hhfac) in diethyl ether. The resulting mixture was stirred at room temperature for 2 hours, and at the same time the color of the mixture changed to dark green. The resulting solution was passed through the CELLITE TM The solvent was removed under reduced pressure to obtain 1.74 g of the title compound as a dark green liquid (yield 70%). 1 H-NMR (CDCl 3 , ppm) δ6.12 (s, 1H), 5.38 (m, 1H), 4.30 (dd, 2H), 1.15 (s, 9H) 13 C-NMR (CDCl 3 , ppm) δ177.83 (q, CF 3 COCH), 119.73, 115...

Embodiment 2

[0028] Embodiment 2: the synthesis of (hfac) Cu (I) (TBA)

[0029] 0.5g (3.5mmol) of Cu 2 O and 0.84g (7.0mmol) of MgSO 4Charge it into a Schlenk flask, and add 30 ml of diethyl ether (the diethyl ether has been distilled by sodium benzophenone under an argon atmosphere), and then slowly add 0.58 g (7.0 mmol) of 3,3-dimethyl-1 - Butyne. The resulting reddish suspension was stirred for 1 hour and cooled to 0 °C, to which 1.46 g (7.0 mmol) of 1,1,1,5,5,5-hexafluoro-2,4 - A solution of pentanedione (Hhfac) in diethyl ether. The resulting mixture was stirred at room temperature for 2 hours, and at the same time the color of the mixture turned yellow. The resulting solution was passed through the CELLITE TM The bed was filtered and the solvent was removed under reduced pressure to afford 1.75 g of the title compound as a yellow solid (73% yield). 1 H-NMR (CDCl 3 , ppm) δ6.09(s, 1H), 4.25(s, 1H), 1.38(s, 9H) 13 C-NMR (C 6 D. 6 , ppm) δ178.57 (q, CF 3 COCH), 116.52 (q, CF ...

Embodiment 3

[0032] Embodiment 3: Deposit copper film on substrate

[0033] Using the precursors of the present invention synthesized in Example 1 and (hfac)Cu(VTMS) and (hfac)Cu(ATMS) as prior art precursors, coated with TiN or SiO by CVD method 2 Copper film was deposited on the substrate. Specifically, the compound was fed into a diffuser maintained at 45°C, and its vapor was delivered to the surface of the substrate in a CVD chamber set at a pressure of 0.3 mmHg in an argon gas flow at a flow rate of 50 sccm. The copper film deposition rate depending on the substrate temperature is shown in Figure 4 middle. Figure 4 The results demonstrated that the precursors of the present invention form copper films at a rate about 5-6 times faster than the prior art precursors.

[0034] On the other hand, the resistivity of films deposited using the precursors of the present invention depends on the temperature of the substrate, e.g. Figure 5 shown. available from Figure 5 It is seen that...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An organocuprous compound of formula (I) of the present invention can be conveniently used in a low-temperature CVD process for the mass production of a contaminant-free copper film having good thermal stability, wherein: R1, R2 and R3 are each independently a C1-8 alkoxy, aryl or aryloxy group, R4 and R5 are each independently hydrogen, fluorine, a CnF2n+1 or CnH2n+1 group, n being an integer in the range of 1 to 6, R6 is hydrogen, fluorine or C1-4 alkyl group, and m is 1 or 2, when m is 1, C*C represents CC, and when m is 2, C*C represents C=C.

Description

field of invention [0001] The invention relates to a novel organic cuprous precursor for chemical vapor deposition of high-purity copper film; and a method for preparing copper film using the precursor. Background of the invention [0002] So far, many metals, such as tungsten and aluminum, have been widely used as interconnect materials for many electronic devices such as semiconductors. However, aluminum interconnects (resistivity: about 2.7 μΩ·cm) tend to suffer from electromigration problems, while tungsten has a high resistivity problem (resistivity: about 5.4 μΩ·cm). Therefore, recent attempts have been made to use copper, which has high conductivity (resistivity: about 1.67 µΩ·cm) and resistance to electromigration, as an interconnection material in advanced devices such as large-scale semiconductor integrated circuits. [0003] Metal interconnects are typically formed by chemical vapor deposition (CVD) using metal-organic precursor compounds, whereas previously Cu f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C18/08C07F1/08C23C16/18C23C18/38C23C24/08H01L21/28H01L21/285
CPCC07F1/08C23C16/18C23C18/38
Inventor 李时雨韩镐姜相宇
Owner POSTECH ACAD IND FOUND
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com