Method and equipment for growing monocrystal of cadmium selenide by gas-phase vertical pulling

A vertical growth, cadmium selenide technology, applied in chemical instruments and methods, single crystal growth, crystal growth, etc., can solve problems affecting crystal growth, low crystal resistivity, increased insecurity, etc., to reduce crystal growth Cost, simplified growth process, and the effect of avoiding secondary pollution

Inactive Publication Date: 2002-12-04
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of the liquid phase method is that the size of the grown single crystal is small, generally a few millimeters, and the crystal contains residual solvent package, so the application is limited
The disadvantages of the temperature gradient melt zone melting method are: 1. Crystal growth requires a high-pressure vessel, resulting in increased cost and increased insecurity; 2. The grown crystal has high stress, many defects, and lo...

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  • Method and equipment for growing monocrystal of cadmium selenide by gas-phase vertical pulling
  • Method and equipment for growing monocrystal of cadmium selenide by gas-phase vertical pulling
  • Method and equipment for growing monocrystal of cadmium selenide by gas-phase vertical pulling

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Embodiment

[0046] The present embodiment prepares the single crystal of cadmium selenide whose size is φ10×40 mm, and the ampoule used is as figure 2 As shown, it consists of a quartz tubular body of φ10 mm × 600 mm, a heat conducting rod 4 and a hanging ring 5. The tubular body is divided into a purification section 1 and a growth section 2 by a neck 3, and the length ratio of the purification section to the growth section is 3: 1. The end of the growth section is a closed structure and a cone. The cone angle of the conical end is 25°. The conical section is provided with a tube neck 6 to facilitate the geometric elimination of crystal nuclei to form single-nucleus growth.

[0047] The technological process of this embodiment is as figure 1 As shown, the following steps are followed in sequence:

[0048] 1. Clean the ampoule

[0049] Cleaning ampoules adopts a combination of comprehensive cleaning and vacuum baking:

[0050] (1) Comprehensive cleaning

[0051]First soak and rinse t...

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Abstract

A vertical gas-phase pulling-up method for growing cadmium selenide monocrystal features that the cadmium selenide powder is used as raw material and the purification of raw material and the growth of monocrystal are performed in a single ampoul consisting of tubular body divided into purifying and growing segment, heat conducting rod and hanging ring. The said method includes cleaning ampoul, charging raw material, vacuumizing, sealing, multi-stage purifying, cutting and separating ampoul, thermal cleaning growing segment, growing crystal and cooling. The resultant monocrystal features complete structure, high uniformity, low stress, bit size phi(10-20)X(30-40)mm and high resistivity (10 to power 6-8 omega cm).

Description

1. Technical field [0001] The invention belongs to the field of single crystal preparation, in particular to a method for growing cadmium selenide single crystal. 2. Background technology [0002] Cadmium selenide (CdSe) single crystal is a II-VI wide bandgap compound semiconductor material. In recent years, it has attracted much attention due to its excellent room temperature nuclear radiation detection performance and nonlinear optical performance. High (1239°C), the vapor pressure of the two components that make up it is relatively large, and the thermal conductivity of the crystal is low, so it is difficult to prepare large-sized high-quality cadmium selenide single crystals. At present, the preparation of CdSe single crystal mainly adopts liquid phase method, temperature gradient melt zone melting method and static vapor phase growth method. The disadvantage of the liquid phase method is that the size of the grown single crystal is small, generally several millimeters,...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B29/48
Inventor 朱世富赵北君
Owner SICHUAN UNIV
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