Integration of continuous self-aligning semiconductor photoelectronic device and mode spot converter

Abstract

The integration process of continuous self-aligning semiconductor photoelectronic device and mode spot converting includes the following steps: growing on substrate buffering InP layer, lower waveguide limiting InGaAsP layer, isolating InP layer, active area structure, thin upper limiting InGaAsP layer and protecting InP layer through organic chemical vapor deposition process, etching to form partial mode spot converter; growoing SiO2 through plasma vapor deposition process; photoetching active area and mode spot converter area; growing InGaAsP layer, P doped covering InP layer and protectingInGaAsP layer through selective metal organic vapor chemical deposition process, growing SiO2, photoetching mask heterojunction bar structure; growing p-n-p type InP current barrier layer through metal organic vapor chemical deposition process.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to the integration of all devices that need to be coupled with single-mode optical fibers, such as semiconductor optical amplifiers, semiconductor lasers, modulators, detectors and superluminescent tubes, and mode spot converters. Background technique [0002] With the rapid development of optical fiber communication, the status and role of semiconductor optoelectronic devices in the field of optical communication are becoming more and more important (and become the main reason for the high price of optical communication). However, the mismatch between the optical field mode of the usual semiconductor optoelectronic device and the optical field mode of the single-mode fiber makes the coupling efficiency of the two very low. Improving the coupling efficiency of the two has become a difficult problem in the preparation of optoelectronic modules, and the price of optoelectronic mod...

AI Technical Summary

Problems solved by technology

In the mode spot converter with gradually narrowed transverse waveguide width, etching technology is used to form lateral wedges. In order to make the mode conversion efficiency high, the etched strip width must be 2 ) coverage, and only select one side of the growing speckle converter; but because the length of the speckle converter is usually shorter, and the optoelectronic device integrated with it is longer, in this way, most of the speckle converter grows as SiO 2 Coverage greatly affects the quality of selected growth materials, especially in the docking part of the two devices, it is difficult to obtain high-quality materials, which greatly affects the coupling efficiency of the two devices and the overall output power of the device

Moreover, it is very difficult to fully realize the connection between the mode spot converter and the active region of the optoelectronic device.

(2) When selecting the growth mode spot converter (SSC), do not use SiO on the side of the optoelectronic device 2 However, it is grown at the same time and used as the upper waveguide layer of the optoelectronic device, which realizes the self-aligned docking between the optoelectronic device and the SSC, but due to the thickness modulation effect and strain modulation in the selective growth process effect, due to the absence of SiO on the side of the optoelectronic device 2 covered, and the SiO on both sides of the SSC connected with it 2 The width is the widest, so the strain difference between the optoelectronic device and the SSC is the largest, and it is difficult to obtain high crystal quality at the joint between the two

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