Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Carbon tube nanometer tube figuring technique

A technology of carbon nanotubes and process methods, which is applied in the direction of nanotechnology, nanotechnology, nanostructure manufacturing, etc., and can solve problems such as limitations and low efficiency

Inactive Publication Date: 2006-02-08
TSINGHUA UNIV
View PDF1 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The construction of electronic devices based on carbon nanotubes requires a method to control the positioning of carbon nanotubes. At present, some people use AFM to manipulate the positioning of carbon nanotubes, but the efficiency is very low. Another method is to make carbon nanotubes on a patterned catalyst. Growth, because the growth of carbon nanotubes generally requires a very high temperature, which has great limitations on the substrate. The published patent No. 1502553 is to grow carbon nanotubes on a patterned substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Carbon tube nanometer tube figuring technique
  • Carbon tube nanometer tube figuring technique
  • Carbon tube nanometer tube figuring technique

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Patterned deposition of carbon nanotubes on a silicon substrate:

[0031] Single crystal silicon wafer N(100) is used as the substrate, and a layer of Megaposit SPR6112B photoresist is coated on it, and the photoresist is exposed according to the pre-designed stripes and dot matrix patterns of different sizes, and the silicon wafer exposed after exposure and development Partially assemble the OTS methyl surface self-assembly film, then soak it in acetone to remove the remaining photoresist, and then assemble the APTES amino surface self-assembly film on the silicon wafer after the glue removal. This results in the formation of a patterned self-assembled membrane surface (e.g. figure 1 shown).

[0032] Immerse the patterned function-treated silicon substrate into SDS aqueous solution or DMF carbon nanotube dispersion liquid deposition (such as image 3 Shown) for sixteen hours, after taking it out, wash it with deionized water or anhydrous methanol respectively, and dr...

Embodiment 2

[0034] Patterned deposition of carbon nanotubes on an aluminum substrate for electrodes:

[0035] Using single crystal silicon wafer N(100) as the substrate, a layer of Al is sputtered on the cleaned silicon wafer, and then a layer of Megaposit SPR6112B photoresist is coated on the Al, according to different sizes of stripes and dot matrix patterns designed in advance Expose the photoresist, then corrode the exposed part of Al (phosphoric acid etching), assemble the OTS methyl surface self-assembly film on the part of the silicon wafer exposed by corroding Al, and then soak in acetone to face the photolithography of the Al surface The glue is removed, and then the APTES amino surface self-assembled film is assembled on the Al after the glue has been removed, to form the graphics of different surface self-assembled films (such as figure 1 shown).

[0036] Immerse the patterned substrate in SDS aqueous solution or DMF carbon nanotube dispersion for 16 hours, then take it out, w...

Embodiment 3

[0038] A patterned carbon nanotube film is obtained by a patterned casting process of carbon nanotubes on an aluminum electrode substrate.

[0039] Use single crystal silicon wafer N(100) as the substrate, sputter a layer of Al on the cleaned silicon wafer, and then coat a layer of Megaposit SPR6112B photoresist on the Al, and design stripes and dot matrix patterns of different sizes according to your own design Expose the photoresist, then corrode the exposed part of Al, assemble the OTS methyl surface self-assembly film on the part of the silicon wafer exposed by corroding Al, and then soak in acetone to remove the photoresist on the Al surface, Hydroxylation again to form a hydrophobic OTS film and a hydrophilic aluminum pattern (such as figure 1 shown).

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a process for graph carbon nanometer tube, belongs to field of nanometer science and technology. The said means mainly uses the force of functionalization organosilane self assembling monolayer film surface force to the carbon nanometer tube in the DMF and the SDS dispersion to graph the single, multilayer film or array of the carbon nanometer tube. Forming graph on the surface in photoetching process, and then assembling different self assembly film on the different surface or area of the gragh, forming single-layer or multilayer construction graph carbon nanometer tube in precipitation and casting art work using the nature of different area and different surface of the graph film. The means can easily form carbon nanometer tube graph on glass, silicon chip or plastic, and also can form carbon nanometer tube array graph on aluminium and other metal. The invention is provided with latent application value in artwork of making panel display screen, transistor, and chemical and biology sensor and semiconductor device.

Description

technical field [0001] The invention relates to a carbon nanotube patterning process method based on a self-assembled film, which is widely used in micro-nano manufacturing, and belongs to the field of nanoscience and technology. Background technique [0002] In 1991, Iijima of Japan discovered multi-walled carbon nanotubes (MWNTs) for the first time, with a diameter of 4-30nm and a length of 1um. In 1993, single-walled carbon nanotubes (SWNTs) were also discovered, with diameters ranging from 0.4nm to 3-4nm and lengths of up to several microns. Carbon nanotubes have unique electronic, mechanical and chemical properties, and have a wide range of applications in the fields of machinery, electrochemistry, energy, and display devices. Carbon nanotubes have two unique and excellent electrical properties, one is the field emission property, and the other is the double electrical property of carbon nanotubes. These two unique electrical properties make this new material have goo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00C01B31/02
Inventor 胡元中彭倚天王慧
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com